Scaled CMOS proves to be suitable for the design of transceiver ICs at micro- and millimeter-waves. The effort is presently toward compact and low-power solutions in view of integrating several transceivers on the same chip enabling phased array systems. In this paper we present a 24 GHz receiver, based on a subharmonic direct conversion architecture, designed in a 65 nm node. The local oscillator takes advantage of the half frequency operation proving significantly lower power consumption when compared to conventional solutions running at received frequency. Stacked switches for subharmonic down-conversion are passive to save voltage room, current driven and loaded by a transresistance amplifier. Optimum biasing of the switches allows maximizing linearity while saving power in the baseband. The integrated LNA matching network is the bottleneck toward low sensitivities. The LNA design trades-off power consumption, gain and sensitivity. Detailed insights into implementation issues, critical in a single-ended topology where both forward and return signal paths have to be supported, are provided. The chip consumes 78 mW and occupies 1.4 mm2 of active area. Experiments show: 30.5 dB gain, 6.7 dB NF, -13 dBm IIP3.

A 24 GHz Subharmonic Direct Conversion Receiver in 65 nm CMOS

MAZZANTI, ANDREA;SOSIO, MARCO;SVELTO, FRANCESCO
2011-01-01

Abstract

Scaled CMOS proves to be suitable for the design of transceiver ICs at micro- and millimeter-waves. The effort is presently toward compact and low-power solutions in view of integrating several transceivers on the same chip enabling phased array systems. In this paper we present a 24 GHz receiver, based on a subharmonic direct conversion architecture, designed in a 65 nm node. The local oscillator takes advantage of the half frequency operation proving significantly lower power consumption when compared to conventional solutions running at received frequency. Stacked switches for subharmonic down-conversion are passive to save voltage room, current driven and loaded by a transresistance amplifier. Optimum biasing of the switches allows maximizing linearity while saving power in the baseband. The integrated LNA matching network is the bottleneck toward low sensitivities. The LNA design trades-off power consumption, gain and sensitivity. Detailed insights into implementation issues, critical in a single-ended topology where both forward and return signal paths have to be supported, are provided. The chip consumes 78 mW and occupies 1.4 mm2 of active area. Experiments show: 30.5 dB gain, 6.7 dB NF, -13 dBm IIP3.
2011
The Electrical and Electronics Engineering category covers resources concerned with applications of electricity, generally those involving current flow through conductors, as in motors and generators. This category also covers the examination of the conduction of electricity through gases or a vacuum as well as through semiconducting materials. Topics include image and signal processing, electromagnetics, electronic components and materials, microwave technology, and microelectronics.
Sì, ma tipo non specificato
Inglese
Internazionale
STAMPA
58
1
88
97
CMOS integrated circuits; LNA; millimeter waves; receivers; subharmonic mixers
4
info:eu-repo/semantics/article
262
Mazzanti, Andrea; Sosio, Marco; M., Repossi; Svelto, Francesco
1 Contributo su Rivista::1.1 Articolo in rivista
none
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11571/218802
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