The effect, on device parameters, of reverse biasing the bulk to source junction of PMOS-NWELL radiation hardened devices has been carefully analysed before and after irradiation up to 5 Mrad with a 60Co γ-rays source. The transistors, parts of a 0.8μm CMOS process, feature 2500μm gate width and different gate lengths. A sizeable white noise reduction is due to both a reduction of the bulk spreading resistor thermal noise contribution and of the F coefficient.
Noise Analysis of Submicron Radiation Hardened PMOS NWELL Devices
SVELTO, FRANCESCO
1998-01-01
Abstract
The effect, on device parameters, of reverse biasing the bulk to source junction of PMOS-NWELL radiation hardened devices has been carefully analysed before and after irradiation up to 5 Mrad with a 60Co γ-rays source. The transistors, parts of a 0.8μm CMOS process, feature 2500μm gate width and different gate lengths. A sizeable white noise reduction is due to both a reduction of the bulk spreading resistor thermal noise contribution and of the F coefficient.File in questo prodotto:
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