Strongly enhanced light emission at wavelengths between 1.3 and 1.6 microns is reported at room temperature in silicon photonic crystal nanocavities with optimized out-coupling efficiency. Sharp peaks corresponding to the resonant modes of PhC nanocavities dominate the broad sub-bandgap emission from optically active defects in the crystalline Si membrane. We measure a 300-fold enhancement of the emission from the PhC nanocavity due to a combination of far-field enhancement and the Purcell effect. The cavity enhanced emission has a very weak temperature dependence, namely less than a factor of 2 reduction between 10 K and room temperature, which makes this approach suitable for the realization of efficient light sources as well as providing a quick and easy tool for the broadband optical characterization of silicon-on-insulator nanostructures.
Room-temperature emission at telecom wavelengths from silicon photonic crystal nanocavities
LO SAVIO, ROBERTO;GERACE, DARIO;ANDREANI, LUCIO;GALLI, MATTEO
2011-01-01
Abstract
Strongly enhanced light emission at wavelengths between 1.3 and 1.6 microns is reported at room temperature in silicon photonic crystal nanocavities with optimized out-coupling efficiency. Sharp peaks corresponding to the resonant modes of PhC nanocavities dominate the broad sub-bandgap emission from optically active defects in the crystalline Si membrane. We measure a 300-fold enhancement of the emission from the PhC nanocavity due to a combination of far-field enhancement and the Purcell effect. The cavity enhanced emission has a very weak temperature dependence, namely less than a factor of 2 reduction between 10 K and room temperature, which makes this approach suitable for the realization of efficient light sources as well as providing a quick and easy tool for the broadband optical characterization of silicon-on-insulator nanostructures.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.