In this work, it is described a quantum theory of the nonlinear optical response from an actual solid-state material possessing an intrinsic bulk contribution to the third-order nonlinear susceptibility (Kerr-type nonlinearity). This material is assumed to be arbitrarily nanostructured to achieve diffraction-limited electromagnetic field confinement. By calculating the zero-time delay second-order correlation of the cavity field, the conditions are identified for using semiconductor or insulating materials with near-infrared energy gaps as efficient means to obtain single-photon nonlinear behavior in prospective solid-state integrated devices, alternative to ideal sources of quantum radiation such as, e.g., single two-level emitters. Thus, future quantum photonics applications can strongly benefit from the capability of nanostructuring ordinary Kerr-type materials to achieve sub-diffraction limited electromagnetic field confinement. The growing interest in integrated quantum photonics, and the possibility of fully exploiting the mature CMOS-based technology to build room-temperature and intrinsically flexible single-photon devices are likely to produce new research avenues based on the present proposal in the near future.

Single-photon nonlinear optics with Kerr-type nanostructured materials

GERACE, DARIO
2012-01-01

Abstract

In this work, it is described a quantum theory of the nonlinear optical response from an actual solid-state material possessing an intrinsic bulk contribution to the third-order nonlinear susceptibility (Kerr-type nonlinearity). This material is assumed to be arbitrarily nanostructured to achieve diffraction-limited electromagnetic field confinement. By calculating the zero-time delay second-order correlation of the cavity field, the conditions are identified for using semiconductor or insulating materials with near-infrared energy gaps as efficient means to obtain single-photon nonlinear behavior in prospective solid-state integrated devices, alternative to ideal sources of quantum radiation such as, e.g., single two-level emitters. Thus, future quantum photonics applications can strongly benefit from the capability of nanostructuring ordinary Kerr-type materials to achieve sub-diffraction limited electromagnetic field confinement. The growing interest in integrated quantum photonics, and the possibility of fully exploiting the mature CMOS-based technology to build room-temperature and intrinsically flexible single-photon devices are likely to produce new research avenues based on the present proposal in the near future.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11571/363550
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