CMOS technology scaling opens up the possibility of designing variable capacitors based on a metal oxide semiconductor structure with improved tuning range and quality factor. This is due to an increase in the oxide capacitance and a reduction in the parasitic resistance. A prototype metal-oxide-semiconductor (MOS) variable capacitor of 3.1 pF nominal value has been realized in a 0.35-μm standard CMOS process. A factor two capacitance change has been achieved for a 2-V variation of the controlling voltage. The varactor Q ranges from 17 to 35, at 1.8 GHz

A Metal-Oxide-Semiconductor Varactor

SVELTO, FRANCESCO;CASTELLO, RINALDO
1999-01-01

Abstract

CMOS technology scaling opens up the possibility of designing variable capacitors based on a metal oxide semiconductor structure with improved tuning range and quality factor. This is due to an increase in the oxide capacitance and a reduction in the parasitic resistance. A prototype metal-oxide-semiconductor (MOS) variable capacitor of 3.1 pF nominal value has been realized in a 0.35-μm standard CMOS process. A factor two capacitance change has been achieved for a 2-V variation of the controlling voltage. The varactor Q ranges from 17 to 35, at 1.8 GHz
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11571/4160
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