We studied the magneto-transport in SiO2 substrate-supported monolayer graphene and the quantum phase transitions that characterize the quantum Hall regime, using magnetic fields up to 28T and temperatures down to 4K. The analysis of the temperature dependence of the Hall and longitudinal resistivity reveals new non-universalities of the critical exponents of the plateau-insulator transition. These exponent depends on the type of disorder that governs the electrical transport, which knowledge is important for the design and fabrication of new graphene nano-devices.
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