In this paper, it is shown that the analysis of the interference fringes due to light reflected from an N-type siliconepitaxial layer grown on an N+ silicon substrate can give both thickness and free carrier concentration of the film, provideda few requirements are met. The technique, which is typically nondestructive, is characterized by a sensitivitywhich is better than in other optical methods.
Optical Interference to Determine the Free Carrier Concentration in Semiconducting Epitaxial Layers
GEDDO, MARIO;
1986-01-01
Abstract
In this paper, it is shown that the analysis of the interference fringes due to light reflected from an N-type siliconepitaxial layer grown on an N+ silicon substrate can give both thickness and free carrier concentration of the film, provideda few requirements are met. The technique, which is typically nondestructive, is characterized by a sensitivitywhich is better than in other optical methods.File in questo prodotto:
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