The optical response of silicon near the E1 structure, due to interband transitions, has been studied as a function of disorder by means of electroreflectance (ER). It is found that crystal grains smaller than the Rutherford backscattering (RBS) spatial resolution can still give rise to a measurable signal. The ER lineshape is briefly discussed and some important features are stressed.

Effect of disorder on structures due to interband transitions in silicon

GEDDO, MARIO;
1986

Abstract

The optical response of silicon near the E1 structure, due to interband transitions, has been studied as a function of disorder by means of electroreflectance (ER). It is found that crystal grains smaller than the Rutherford backscattering (RBS) spatial resolution can still give rise to a measurable signal. The ER lineshape is briefly discussed and some important features are stressed.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11571/460401
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