In this work the role of Fe impurities introduced in boron doped polycrystalline solar grade silicon is examined by means of low temperature absorption measurements in the far infrared. In particular, the results can be explained in term of formation of boron acceptor-iron donor complexes.

Infrared study of iron impurities in polycrystalline solar grade silicon

GEDDO, MARIO;
1988-01-01

Abstract

In this work the role of Fe impurities introduced in boron doped polycrystalline solar grade silicon is examined by means of low temperature absorption measurements in the far infrared. In particular, the results can be explained in term of formation of boron acceptor-iron donor complexes.
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11571/460497
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 1
  • ???jsp.display-item.citation.isi??? ND
social impact