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EnglishIn this paper the technique of infrared angular spectroscopy applied to the characterization of epitaxial layers of n-type silicon grown on N+ or P+ substrates is illustrated. Some results are reported and discussed concerning films having a free-carrier concentration ranging from 1014 cm−3 to 1017 cm−3 and thickness of the order of 10 μm. A significant comparison with results obtained by other techniques (four-point probe, spreading resistance, C−V plots, etc.) is performed and a few simple conclusions are drawn.
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| Titolo: | Infrared angular spectroscopy characterization of epitaxial layers of n-type silicon grown on N+ or P+ substrates |
| Autori: | |
| Data di pubblicazione: | 1989 |
| Rivista: | |
| Abstract: | In this paper the technique of infrared angular spectroscopy applied to the characterization of epitaxial layers of n-type silicon grown on N+ or P+ substrates is illustrated. Some results are reported and discussed concerning films having a free-carrier concentration ranging from 1014 cm−3 to 1017 cm−3 and thickness of the order of 10 μm. A significant comparison with results obtained by other techniques (four-point probe, spreading resistance, C−V plots, etc.) is performed and a few simple conclusions are drawn. |
| Handle: | http://hdl.handle.net/11571/460499 |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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