The oxygen content near epitaxial layer‐substrate silicon interface was investigated using a micro Fourier transform infrared technique. Systematic measurements, performed in a transversal wafer cross‐section configuration, clearly indicated the presence of interstitial oxygen in the epitaxial layer when it was grown on n‐type substrates, while no evidence of oxygen in it was obtained (in concentration detectable by the infrared technique) when grown on p‐type substrates. Interstitial oxygen profiles, near the epitaxial layer‐substrate interface, obtained by analyzing the optical data, are reported and discussed considering different combinations of dopants in the substrate and in the epilayer

Interstitial oxygen determination near epitaxial silicon and Czochralski silicon interface

GEDDO, MARIO;
1991-01-01

Abstract

The oxygen content near epitaxial layer‐substrate silicon interface was investigated using a micro Fourier transform infrared technique. Systematic measurements, performed in a transversal wafer cross‐section configuration, clearly indicated the presence of interstitial oxygen in the epitaxial layer when it was grown on n‐type substrates, while no evidence of oxygen in it was obtained (in concentration detectable by the infrared technique) when grown on p‐type substrates. Interstitial oxygen profiles, near the epitaxial layer‐substrate interface, obtained by analyzing the optical data, are reported and discussed considering different combinations of dopants in the substrate and in the epilayer
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11571/460504
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 7
  • ???jsp.display-item.citation.isi??? ND
social impact