silicio epitassiale, impurezze, assorbimento otticoBoron accumulation was observed close to the interface between an epitaxially grown silicon layer and a silicon substrate wafer and then analyzed. It was concluded that boron contamination interacting with the surface oxide on wafers led to boron accumulation close to the interface. Such accumulation is shown to occur for epilayers of standard thickness (approximately 10 μm), with boron being electrically unactive.

Boron accumulation at epi-substrate silicon interface during epitaxial growth

GEDDO, MARIO;
1992

Abstract

silicio epitassiale, impurezze, assorbimento otticoBoron accumulation was observed close to the interface between an epitaxially grown silicon layer and a silicon substrate wafer and then analyzed. It was concluded that boron contamination interacting with the surface oxide on wafers led to boron accumulation close to the interface. Such accumulation is shown to occur for epilayers of standard thickness (approximately 10 μm), with boron being electrically unactive.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11571/461219
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