It is experimentally shown that a gentle gas adsorption technique can be used to achieve an optimal covering of silicon-based photonic crystal slabs, leading to an unexpectedly large (up to 42 nm) shift of the resonant modes wavelength, with possibility of fine tuning. Strong enhancement (up to 30 times) of the emission band of the Er3+ ion into such structures is obtained. Finally, we were able to balance the adsorption and desorption processes by controlling the sample temperature, thus yielding a stable mode at the desired wavelength.
Ultra-large tuning of photonic modes for efficient Er-doped silicon-based emitters
GERACE, DARIO;ANDREANI, LUCIO;
2012-01-01
Abstract
It is experimentally shown that a gentle gas adsorption technique can be used to achieve an optimal covering of silicon-based photonic crystal slabs, leading to an unexpectedly large (up to 42 nm) shift of the resonant modes wavelength, with possibility of fine tuning. Strong enhancement (up to 30 times) of the emission band of the Er3+ ion into such structures is obtained. Finally, we were able to balance the adsorption and desorption processes by controlling the sample temperature, thus yielding a stable mode at the desired wavelength.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
