A three terminal metal-oxide-silicon varactor operated between accumulation and deep depletion is proposed for RF IC's. Prototypes, realized in a 0.35 μm standard CMOS technology, show a 3.1:1 capacitance tuning. The corresponding minimum Q is 23 at 1800 MHz. The proposed varactor lends itself as tuning element of VCO's in highly integrated CMOS transceivers
A Three terminal varactor for RF ICs in standard CMOS technology
SVELTO, FRANCESCO;CASTELLO, RINALDO;
2000-01-01
Abstract
A three terminal metal-oxide-silicon varactor operated between accumulation and deep depletion is proposed for RF IC's. Prototypes, realized in a 0.35 μm standard CMOS technology, show a 3.1:1 capacitance tuning. The corresponding minimum Q is 23 at 1800 MHz. The proposed varactor lends itself as tuning element of VCO's in highly integrated CMOS transceiversFile in questo prodotto:
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