Reflectance and transmittance spectra of p-type InP:Zn samples were measured by Fourier transform infrared spectroscopy (PTIR) in the spectral range from 40 to 700 cm-‘. Zn was diffused into InP by an open-tube method, and a subsequent short annealing at different temperatures for the electrical activation of Zn diffused layers was performed. Free-carrier effects on vibrational structures around the restrahlen peak were evidenced. Concentration of electrically active Zn and free-hole damping constant were obtained by fitting reflectance spectra with a classical Drude-Lorentz dielectric function. The results confirmed the model for the electrical activation of the samples, based on outdiffusion of interstitial Zn by thermal annealing.
Infrared study and characterization of Zn diffused InP
GUIZZETTI, GIORGIO;PATRINI, MADDALENA;
1993-01-01
Abstract
Reflectance and transmittance spectra of p-type InP:Zn samples were measured by Fourier transform infrared spectroscopy (PTIR) in the spectral range from 40 to 700 cm-‘. Zn was diffused into InP by an open-tube method, and a subsequent short annealing at different temperatures for the electrical activation of Zn diffused layers was performed. Free-carrier effects on vibrational structures around the restrahlen peak were evidenced. Concentration of electrically active Zn and free-hole damping constant were obtained by fitting reflectance spectra with a classical Drude-Lorentz dielectric function. The results confirmed the model for the electrical activation of the samples, based on outdiffusion of interstitial Zn by thermal annealing.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
