CINECA IRIS Institutional Research Information System
IRIS è la soluzione IT che facilita la raccolta e la gestione dei dati relativi alle attività e ai prodotti della ricerca. Fornisce a ricercatori, amministratori e valutatori gli strumenti per monitorare i risultati della ricerca, aumentarne la visibilità e allocare in modo efficace le risorse disponibili.
EnglishThe optical excitations in pure and Si-substituted CuGeO3 are investigated in the 15-300 K temperature range. A structure, detected for the E field parallel to the c axis of the crystals at about 3.2 eV, is due to the formation of a Zhang-Rice-like (ZR) exciton. The weak oscillator strength is due to the low mobility of the ZR-like exciton between the edge-sharing CuO4 plaquettes of CuGeO3. The temperature dependence of the ZR-like energy is explained by a renormalization effect involving phonon-electron interactions or changes in spin ordering, while the increase of ZR-like exciton intensity with the Si content is argued to arise from a different hybridization of the Si-O bond with respect to Ge-O.
Scheda prodotto non validato
Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo
| Titolo: | Role of the Zhang-Rice-like exciton in optical absorption spectra of CuGeO3 and CuGe1-xSixO3 single crystals | |
| Autori: | ||
| Data di pubblicazione: | 2002 | |
| Rivista: | ||
| Abstract: | The optical excitations in pure and Si-substituted CuGeO3 are investigated in the 15-300 K temperature range. A structure, detected for the E field parallel to the c axis of the crystals at about 3.2 eV, is due to the formation of a Zhang-Rice-like (ZR) exciton. The weak oscillator strength is due to the low mobility of the ZR-like exciton between the edge-sharing CuO4 plaquettes of CuGeO3. The temperature dependence of the ZR-like energy is explained by a renormalization effect involving phonon-electron interactions or changes in spin ordering, while the increase of ZR-like exciton intensity with the Si content is argued to arise from a different hybridization of the Si-O bond with respect to Ge-O. | |
| Handle: | http://hdl.handle.net/11571/12048 | |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
File in questo prodotto:
Copyright © 2022