We have characterized through degenerate four wave mixing (DFWM) the nonlinear optical response of bulk GaAs at =1.O64 um. At the lower intensities, for the compensated samples, the reflectivity is accounted by a 3rd order nonlinearity, mainly due to free carrier generation, with a decay time of 1 ns. From high intensity data we derive for all samples a two photon absorption coefficient in agreement with the most recent reported values.
Nonlinear optical properties in bulk semi-insulating GaAs probed by picosecond pulses
AGNESI, ANTONIANGELO;BANFI, GIAN PIERO;REALI, GIANCARLO
1990-01-01
Abstract
We have characterized through degenerate four wave mixing (DFWM) the nonlinear optical response of bulk GaAs at =1.O64 um. At the lower intensities, for the compensated samples, the reflectivity is accounted by a 3rd order nonlinearity, mainly due to free carrier generation, with a decay time of 1 ns. From high intensity data we derive for all samples a two photon absorption coefficient in agreement with the most recent reported values.File in questo prodotto:
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