Atomic-scale sidewalls roughness smoothening thanks to high temperature hydrogen annealing is a key enabler for a low-loss (<0.5 dB/cm) silicon Q-photonics platform. Using this technology, authors report here about high-Q (Q1 >4 × 105) silicon micro-resonators for on-chip heralded single-photon bright quantum sources by spontaneous four-wave mixing.

Low-Loss Silicon Technology for High-Q Bright Quantum Sources

Bajoni D.;Galli M.;Garrisi F.;Liscidini M.;Sabattoli F. A.;
2019-01-01

Abstract

Atomic-scale sidewalls roughness smoothening thanks to high temperature hydrogen annealing is a key enabler for a low-loss (<0.5 dB/cm) silicon Q-photonics platform. Using this technology, authors report here about high-Q (Q1 >4 × 105) silicon micro-resonators for on-chip heralded single-photon bright quantum sources by spontaneous four-wave mixing.
2019
978-1-7281-0905-3
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11571/1335027
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