We report on the linear and nonlinear characterization of PECVD Si-rich-nitride-waveguides. We show that the nonlinear properties can be enhanced by one order of magnitude with respect to standard Si3N4 in the 1550-nm-region without suffering two-photon-absorption.
CMOS-compatible silicon-rich nitride waveguides for ultrafast nonlinear signal processing
Lacava C.
;
2016-01-01
Abstract
We report on the linear and nonlinear characterization of PECVD Si-rich-nitride-waveguides. We show that the nonlinear properties can be enhanced by one order of magnitude with respect to standard Si3N4 in the 1550-nm-region without suffering two-photon-absorption.File in questo prodotto:
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