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EnglishAn inverter-based active feedback CMOS LNA with balun function is within a direct converter receiver. The LNA has three gain stages. The Multi-gated transistor (MGTR) technique is employed to null the third-order distortion of the last two gain stages while complementary configurations are used to compensate second-order nonlinearity in all stages. The complete direct-conversion receiver was fabricated in 28nm CMOS. Measurement results indicate that the integrated receiver provides a minimum NF of 3.4 dB, and a maximum gain of 48.2 dB from 1 to 6 GHz. The in-band and out-of-band IIP3 are-10 dBm and-4 dBm, respectively. The receiver dissipates 22.2 mW at 5 GHz LO frequency and occupies an area of 0.08 mm2.
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| Titolo: | A 0.08mm21-6.2 GHz Receiver Front-End with Inverter-Based Shunt-Feedback Balun-LNA |
| Autori: | |
| Data di pubblicazione: | 2020 |
| Abstract: | An inverter-based active feedback CMOS LNA with balun function is within a direct converter receiver. The LNA has three gain stages. The Multi-gated transistor (MGTR) technique is employed to null the third-order distortion of the last two gain stages while complementary configurations are used to compensate second-order nonlinearity in all stages. The complete direct-conversion receiver was fabricated in 28nm CMOS. Measurement results indicate that the integrated receiver provides a minimum NF of 3.4 dB, and a maximum gain of 48.2 dB from 1 to 6 GHz. The in-band and out-of-band IIP3 are-10 dBm and-4 dBm, respectively. The receiver dissipates 22.2 mW at 5 GHz LO frequency and occupies an area of 0.08 mm2. |
| Handle: | http://hdl.handle.net/11571/1352174 |
| ISBN: | 978-1-7281-6809-8 |
| Appare nelle tipologie: | 4.1 Contributo in Atti di convegno |
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