This paper presents an experimental comparison between a Direct Matrix Converter and an Indirect Matrix Converter in terms of semiconductor devices thermal cycling. Both converters have been designed and built using SiC MOSFETs; the Indirect Matrix Converter has also been tested using a hybrid solution with Silicon IGBT on the input stage and SiC MOSFETs on the output stage. © 2016 IEEE.
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Titolo: | Experimental comparison of devices thermal cycling in direct matrix converters (DMC) and Indirect Matrix Converters (IMC) using SiC MOSFETs |
Autori: | |
Data di pubblicazione: | 2016 |
Abstract: | This paper presents an experimental comparison between a Direct Matrix Converter and an Indirect Matrix Converter in terms of semiconductor devices thermal cycling. Both converters have been designed and built using SiC MOSFETs; the Indirect Matrix Converter has also been tested using a hybrid solution with Silicon IGBT on the input stage and SiC MOSFETs on the output stage. © 2016 IEEE. |
Handle: | http://hdl.handle.net/11571/1372822 |
ISBN: | 9781509007370 |
Appare nelle tipologie: | 4.1 Contributo in Atti di convegno |
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