This paper presents an experimental comparison between a Direct Matrix Converter and an Indirect Matrix Converter in terms of semiconductor devices thermal cycling. Both converters have been designed and built using SiC MOSFETs; the Indirect Matrix Converter has also been tested using a hybrid solution with Silicon IGBT on the input stage and SiC MOSFETs on the output stage. © 2016 IEEE.

Experimental comparison of devices thermal cycling in direct matrix converters (DMC) and Indirect Matrix Converters (IMC) using SiC MOSFETs

Trentin A.;Zanchetta P.
;
2016

Abstract

This paper presents an experimental comparison between a Direct Matrix Converter and an Indirect Matrix Converter in terms of semiconductor devices thermal cycling. Both converters have been designed and built using SiC MOSFETs; the Indirect Matrix Converter has also been tested using a hybrid solution with Silicon IGBT on the input stage and SiC MOSFETs on the output stage. © 2016 IEEE.
9781509007370
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11571/1372822
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