Experimental comparison of devices thermal cycling in direct matrix converters (DMC) and Indirect Matrix Converters (IMC) using SiC MOSFETs

This paper presents an experimental comparison between a Direct Matrix Converter and an Indirect Matrix Converter in terms of semiconductor devices thermal cycling. Both converters have been designed and built using SiC MOSFETs; the Indirect Matrix Converter has also been tested using a hybrid solution with Silicon IGBT on the input stage and SiC MOSFETs on the output stage. © 2016 IEEE.



Titolo: Experimental comparison of devices thermal cycling in direct matrix converters (DMC) and Indirect Matrix Converters (IMC) using SiC MOSFETs
Autori: 
TRENTIN, ANDREW
ZANCHETTA, PERICLE (Corresponding)
mostra contributor esterni 
Data di pubblicazione: 2016
Abstract: This paper presents an experimental comparison between a Direct Matrix Converter and an Indirect Matrix Converter in terms of semiconductor devices thermal cycling. Both converters have been designed and built using SiC MOSFETs; the Indirect Matrix Converter has also been tested using a hybrid solution with Silicon IGBT on the input stage and SiC MOSFETs on the output stage. © 2016 IEEE.
Handle: http://hdl.handle.net/11571/1372822
ISBN: 9781509007370
Appare nelle tipologie:4.1 Contributo in Atti di convegno

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http://hdl.handle.net/11571/1372822
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