EUV lithography is promising for addressing upcoming, <10nm nodes for the semiconductor industry, but with this promise comes the need for reliable metrology techniques. In particular, there is a need for actinic mask inspection in which the imaging wavelength matches that of the intended lithography process, so that the most relevant defects are detected. Here, we demonstrate tabletop, ptychographic, coherent diffraction imaging (CDI) in reflection- and transmission-modes of extended samples, using a 13 nm high harmonic generation (HHG) source. We achieve the first sub-wavelength resolution EUV image (0.9λ) in transmission, the highest spatial resolution using any 13.5 nm source to date. We also present the first reflection-mode image obtained on a tabletop using 12.7 nm light. This work represents the first 12.7 nm reflection-mode image using any source of a general sample.

Sub-wavelength transmission and reflection mode tabletop imaging with 13nm illumination via ptychography CDI

Mancini G. F.
Membro del Collaboration Group
;
Bevis C. S.;
2017-01-01

Abstract

EUV lithography is promising for addressing upcoming, <10nm nodes for the semiconductor industry, but with this promise comes the need for reliable metrology techniques. In particular, there is a need for actinic mask inspection in which the imaging wavelength matches that of the intended lithography process, so that the most relevant defects are detected. Here, we demonstrate tabletop, ptychographic, coherent diffraction imaging (CDI) in reflection- and transmission-modes of extended samples, using a 13 nm high harmonic generation (HHG) source. We achieve the first sub-wavelength resolution EUV image (0.9λ) in transmission, the highest spatial resolution using any 13.5 nm source to date. We also present the first reflection-mode image obtained on a tabletop using 12.7 nm light. This work represents the first 12.7 nm reflection-mode image using any source of a general sample.
2017
Proceedings of SPIE - The International Society for Optical Engineering
Inglese
contributo
31st Conference on Metrology, Inspection, and Process Control for Microlithography 2017
2017
usa
Internazionale
SPIE
13 nm imaging; Actinic inspection; Coherent diffraction imaging; High NA; Mask inspection; Ptychography; Reflection mode imaging; Sub-wavelength imaging
none
Tanksalvala, M.; Porter, C. L.; Gardner, D. F.; Gerrity, M.; Mancini, G. F.; Zhang, X.; Miley, G. P.; Shanblatt, E. R.; Galloway, B. R.; Bevis, C. S.;...espandi
273
info:eu-repo/semantics/conferenceObject
14
4 Contributo in Atti di Convegno (Proceeding)::4.1 Contributo in Atti di convegno
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11571/1477831
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 2
  • ???jsp.display-item.citation.isi??? 0
social impact