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EnglishThe several processes required to achieve Er luminescence in Si are investigated. In particular, the role of Er-O interactions to obtain the incorporation of high Er concentrations, electrically and optically active, in crystalline Si is investigated. It is found that a large enhancement in the electrical activation of Er (up to three orders of magnitude) is obtained by co-implanting Er with O at 573K or at 77 K. The optical efficiency of this sample has been studied by photoluminescence. Studies on the luminescence intensity as a function of the pump power gave important information on the mechanisms underlying Er luminescence in Si and its competing phenomena. These data are presented and discusses.
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| Titolo: | Er luminescence in Si: a critical balance between optical activity and pumping efficiency | |
| Autori: | ||
| Data di pubblicazione: | 1993 | |
| Abstract: | The several processes required to achieve Er luminescence in Si are investigated. In particular, the role of Er-O interactions to obtain the incorporation of high Er concentrations, electrically and optically active, in crystalline Si is investigated. It is found that a large enhancement in the electrical activation of Er (up to three orders of magnitude) is obtained by co-implanting Er with O at 573K or at 77 K. The optical efficiency of this sample has been studied by photoluminescence. Studies on the luminescence intensity as a function of the pump power gave important information on the mechanisms underlying Er luminescence in Si and its competing phenomena. These data are presented and discusses. | |
| Handle: | http://hdl.handle.net/11571/148724 | |
| ISBN: | 1558991972 9781558991972 | |
| Appare nelle tipologie: | 4.1 Contributo in Atti di convegno |
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http://hdl.handle.net/11571/148724
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