The several processes required to achieve Er luminescence in Si are investigated. In particular, the role of Er-O interactions to obtain the incorporation of high Er concentrations, electrically and optically active, in crystalline Si is investigated. It is found that a large enhancement in the electrical activation of Er (up to three orders of magnitude) is obtained by co-implanting Er with O at 573K or at 77 K. The optical efficiency of this sample has been studied by photoluminescence. Studies on the luminescence intensity as a function of the pump power gave important information on the mechanisms underlying Er luminescence in Si and its competing phenomena. These data are presented and discusses.
Er luminescence in Si: a critical balance between optical activity and pumping efficiency
BELLANI, VITTORIO;
1993-01-01
Abstract
The several processes required to achieve Er luminescence in Si are investigated. In particular, the role of Er-O interactions to obtain the incorporation of high Er concentrations, electrically and optically active, in crystalline Si is investigated. It is found that a large enhancement in the electrical activation of Er (up to three orders of magnitude) is obtained by co-implanting Er with O at 573K or at 77 K. The optical efficiency of this sample has been studied by photoluminescence. Studies on the luminescence intensity as a function of the pump power gave important information on the mechanisms underlying Er luminescence in Si and its competing phenomena. These data are presented and discusses.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
