An analytic model for the C- V characteristic of Inversion-Mode MOS (I-MOS) capacitors is defined, to be used in the design of Charge Sensitive Amplifiers (CSAs) with dynamic signal compression feature. The model is derived from the equations governing channel inversion in the two and four terminal metal-oxide-semiconductor structure. A comparison between the model predictions and the simulation results is provided for MOS capacitors and CSAs in a 65 nm CMOS technology.
Modeling I-MOS Capacitor C-V Characteristic for Non-Linear Charge Sensitive Amplifiers
Giroletti S.;Shojaei F.;Ratti L.;Vacchi C.
2024-01-01
Abstract
An analytic model for the C- V characteristic of Inversion-Mode MOS (I-MOS) capacitors is defined, to be used in the design of Charge Sensitive Amplifiers (CSAs) with dynamic signal compression feature. The model is derived from the equations governing channel inversion in the two and four terminal metal-oxide-semiconductor structure. A comparison between the model predictions and the simulation results is provided for MOS capacitors and CSAs in a 65 nm CMOS technology.File in questo prodotto:
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