This paper presents the design and experimental validation of a stacked common-base power amplifier (PA) tailored for D-band communication systems. Leveraging 55 nm SiGe BiCMOS technology, the proposed PA architecture combines the superior gain compression performance of the common-base topology with the higher voltage swing provided by stacked-transistor power amplifiers. Experimental results demonstrate a peak output power of 19.7 dBm with only a 0.5 dB lower 1-dB compression point (o P1dB) of 19.2 dBm at 135 GHz. The power added efficiency (PAE) reaches 12.1% at saturation and 11.5% at o P1dB.
D-band Stacked Common-Base Power Amplifier with 19.2dBm oP1dB in 55 nm SiGe BiCMOS
Bilato, Andrea;Mazzanti, Andrea
2024-01-01
Abstract
This paper presents the design and experimental validation of a stacked common-base power amplifier (PA) tailored for D-band communication systems. Leveraging 55 nm SiGe BiCMOS technology, the proposed PA architecture combines the superior gain compression performance of the common-base topology with the higher voltage swing provided by stacked-transistor power amplifiers. Experimental results demonstrate a peak output power of 19.7 dBm with only a 0.5 dB lower 1-dB compression point (o P1dB) of 19.2 dBm at 135 GHz. The power added efficiency (PAE) reaches 12.1% at saturation and 11.5% at o P1dB.File in questo prodotto:
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