We present device simulation results showing that only a simultaneous, localised increase of the interface-state density at the gate-drain recess surface and of negative charge at the channel-buffer interface can thoroughly account for the hot-electron degradation modes observed experimentally in AlGaAs-GaAs HFETs, including drain saturation current degradation, reverse gate-current increase, kink and gate-lag enhancement.

Numerical analysis of hot electron degradation modes in power HFETs

MAZZANTI, ANDREA;
2002-01-01

Abstract

We present device simulation results showing that only a simultaneous, localised increase of the interface-state density at the gate-drain recess surface and of negative charge at the channel-buffer interface can thoroughly account for the hot-electron degradation modes observed experimentally in AlGaAs-GaAs HFETs, including drain saturation current degradation, reverse gate-current increase, kink and gate-lag enhancement.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11571/208825
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