Hot-carrier degradation effects are investigated in AlGaAs/GaAs HFETs by coupling measurements and two-dimensional device simulations. It is shown that only a simultaneous, localised increase of defects at the gate-drain recess surface and channel-buffer interface can thoroughly account for the observed post-stress device behaviour in terms of drain saturation current decrease, reverse gate current increase, gate-lag enhancement.
Measurements and simulations of hot-carrier degradation effects in AlGaAs/GaAs HFETs
MAZZANTI, ANDREA;
2002-01-01
Abstract
Hot-carrier degradation effects are investigated in AlGaAs/GaAs HFETs by coupling measurements and two-dimensional device simulations. It is shown that only a simultaneous, localised increase of defects at the gate-drain recess surface and channel-buffer interface can thoroughly account for the observed post-stress device behaviour in terms of drain saturation current decrease, reverse gate current increase, gate-lag enhancement.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
