Gate- and drain-lag phenomena are investigated in AlGaAs-InGaAs pseudomorphic HEMTs by comparing experimental transient and pulsed characteristics with simulated ones. A consistent interpretation for experimental data is provided, relying on the assumption that acceptor-like surface traps are present at the ungated surface between gate and source/drain contacts.
Experimental and numerical analysis of gate- and drain-lag phenomena in AlGaAs/InGaAs PHEMTs
MAZZANTI, ANDREA;
2002-01-01
Abstract
Gate- and drain-lag phenomena are investigated in AlGaAs-InGaAs pseudomorphic HEMTs by comparing experimental transient and pulsed characteristics with simulated ones. A consistent interpretation for experimental data is provided, relying on the assumption that acceptor-like surface traps are present at the ungated surface between gate and source/drain contacts.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
