We report on the design and the experimental characterization of a new 3-D image sensor, based on a new 120-nm CMOS-compatible photo-detector, which features an internal demodulation mechanism effective up to high frequencies. The distance range covered by our proof-of-concept device spans from 1-m to a few meter, and the resolution is about 1-cm.
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Titolo: | A 180-nm CMOS time-of-flight 3-D image sensor | |
Autori: | ||
Data di pubblicazione: | 2010 | |
Abstract: | We report on the design and the experimental characterization of a new 3-D image sensor, based on a new 120-nm CMOS-compatible photo-detector, which features an internal demodulation mechanism effective up to high frequencies. The distance range covered by our proof-of-concept device spans from 1-m to a few meter, and the resolution is about 1-cm. | |
Handle: | http://hdl.handle.net/11571/216142 | |
ISBN: | 9781424482269 | |
Appare nelle tipologie: | 4.1 Contributo in Atti di convegno |
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