A 65 nm CMOS Class-G headphone driver operates from ±1.4 V, ±0.35 V supplies. At low power level it uses the low voltage supply to reduce the dissipation to 1.63 mW @ Pout = 0.5 mW into 32 ¿. At higher power level, the smooth transition between the voltage supply rails allows a THD+N better than -80 dB for Pout ¿ 16 mW into 32 ¿. The SNR is 101 dB, quiescent power is 0.41 mW and active die area is 0.14 mm2.
Class-G headphone driver in 65nm CMOS technology
LOLLIO, ALEX;CASTELLO, RINALDO
2010-01-01
Abstract
A 65 nm CMOS Class-G headphone driver operates from ±1.4 V, ±0.35 V supplies. At low power level it uses the low voltage supply to reduce the dissipation to 1.63 mW @ Pout = 0.5 mW into 32 ¿. At higher power level, the smooth transition between the voltage supply rails allows a THD+N better than -80 dB for Pout ¿ 16 mW into 32 ¿. The SNR is 101 dB, quiescent power is 0.41 mW and active die area is 0.14 mm2.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.