A CMOS continuous time biquadratic cell with a centre frequency of 800 MHz is proposed. The circuit was designed in a 0.25 um minimum lithography technology using gm-C fully differential configuration. To make a correct sizing of the circuit, particular attention was paid to the mathematical transfer functions of transconductor, integrator and filter. At 2.7 V of voltage supply, the filter presents a power consumption of 51 mW; 1% of THD is reached with 385 mV peak differential sinusoidal input signal, while the total input noise is lower than 319 mVrms. The dynamic range is 58.6 dB and the peak of SNDR is 53.2dB. The necessary integrated capacitance is 4 pF and the total area of the filter is 0.013 mm2.
A CMOS 800-MHz continuous-time biquadratic cell
FEDELI, MICHELE;VACCHI, CARLA;MONTECCHI, FEDERICO
1999-01-01
Abstract
A CMOS continuous time biquadratic cell with a centre frequency of 800 MHz is proposed. The circuit was designed in a 0.25 um minimum lithography technology using gm-C fully differential configuration. To make a correct sizing of the circuit, particular attention was paid to the mathematical transfer functions of transconductor, integrator and filter. At 2.7 V of voltage supply, the filter presents a power consumption of 51 mW; 1% of THD is reached with 385 mV peak differential sinusoidal input signal, while the total input noise is lower than 319 mVrms. The dynamic range is 58.6 dB and the peak of SNDR is 53.2dB. The necessary integrated capacitance is 4 pF and the total area of the filter is 0.013 mm2.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
