Boron‐doped polycrystalline silicon samples containing variable amounts of iron have been investigated by means of transmission measurements, from 230 to 360 cm−1, in order to study the effect of the presence of iron on boron acceptor excitation spectrum lines. The first absorption measurements in the far infrared which indicate the formation of Fe‐B complexes and the accumulation of Fe at the grain boundaries in such samples are reported here
Infrared investigation of the presence of Fe in B-doped polycrystalline silicon
GEDDO, MARIO;
1988-01-01
Abstract
Boron‐doped polycrystalline silicon samples containing variable amounts of iron have been investigated by means of transmission measurements, from 230 to 360 cm−1, in order to study the effect of the presence of iron on boron acceptor excitation spectrum lines. The first absorption measurements in the far infrared which indicate the formation of Fe‐B complexes and the accumulation of Fe at the grain boundaries in such samples are reported hereFile in questo prodotto:
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