We present a new approach for the direct synthesis of Si nanowires exhibiting room temperature light emission due to quantum confinement effects. We also demonstrate an efficient electroluminescence emission at low voltage from Si NWs.

Si nanowire light emitting devices

GALLI, MATTEO;
2011-01-01

Abstract

We present a new approach for the direct synthesis of Si nanowires exhibiting room temperature light emission due to quantum confinement effects. We also demonstrate an efficient electroluminescence emission at low voltage from Si NWs.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11571/466848
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