A fully differential 900 MHz CMOS LNA using, as input stage, nMOS and pMOS inductively degenerated pairs, in shunt configuration, achieves the following performance: 2 dB NF, 22 dB voltage gain, -3 dBm IIP3 with 8 mA current consumption. As additional feature of this LNA is a variable gain. Measurements have been performed on packaged dies. No external components are used, except for an SMD inductor (used for tuning purposes), placed in series with the on-chip gate spiral inductor
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Titolo: | A 2 dB NF, Fully Differential, Variable Gain 900 MHz CMOS LNA | |
Autori: | ||
Data di pubblicazione: | 2000 | |
Abstract: | A fully differential 900 MHz CMOS LNA using, as input stage, nMOS and pMOS inductively degenerated pairs, in shunt configuration, achieves the following performance: 2 dB NF, 22 dB voltage gain, -3 dBm IIP3 with 8 mA current consumption. As additional feature of this LNA is a variable gain. Measurements have been performed on packaged dies. No external components are used, except for an SMD inductor (used for tuning purposes), placed in series with the on-chip gate spiral inductor | |
Handle: | http://hdl.handle.net/11571/7088 | |
ISBN: | 9780780363090 | |
Appare nelle tipologie: | 4.1 Contributo in Atti di convegno |
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