We demonstrate electrically pumped silicon nano-light source at room temperature, having very narrow emission line (<0.5nm) at 1500nm wavelength, by enhancing the electroluminescence (EL) via combination of hydrogen plasma treatment and Purcell effect. The measured output power spectral density is 0.8mW/nm/cm2, which is highest ever reported value from any silicon light emitter.

Room temperature electrically pumped silicon nano-light source at telecommunication wavelengths, Silicon Photonics VIII

GERACE, DARIO;GALLI, MATTEO;
2013-01-01

Abstract

We demonstrate electrically pumped silicon nano-light source at room temperature, having very narrow emission line (<0.5nm) at 1500nm wavelength, by enhancing the electroluminescence (EL) via combination of hydrogen plasma treatment and Purcell effect. The measured output power spectral density is 0.8mW/nm/cm2, which is highest ever reported value from any silicon light emitter.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11571/742227
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