This paper presents a high-side current sense circuit for a 100-V monolithic 1-μm GaN-on-Si half bridge, designed to achieve a fast response and low power consumption. The circuit employs a novel technique based on the channel length modulation of a resistively degenerated 100-V enhancement-mode transistor to transfer the analog information from the high- to the low-voltage rail. The proposed design achieves a 50-ns response time and 99.97% accuracy under the nominal operating condition of 50-V input voltage and 10-A load current. The current sense amplifier exhibits a DC gain of 73 dB and a gain-bandwidth product of 18.6 MHz. The accuracy remains above 96.5% across a wide range of temperatures, input voltages, load currents, and device mismatches.
A 50-ns Response Time High-Side Current Sense with a Novel Analog Level-Shifting Technique for a 100-V Monolithic 1-μm GaN-on-Si Half Bridge
Tardani T. F.
;Aprile A.;Moisello E.;Bonizzoni E.;Malcovati P.
2026-01-01
Abstract
This paper presents a high-side current sense circuit for a 100-V monolithic 1-μm GaN-on-Si half bridge, designed to achieve a fast response and low power consumption. The circuit employs a novel technique based on the channel length modulation of a resistively degenerated 100-V enhancement-mode transistor to transfer the analog information from the high- to the low-voltage rail. The proposed design achieves a 50-ns response time and 99.97% accuracy under the nominal operating condition of 50-V input voltage and 10-A load current. The current sense amplifier exhibits a DC gain of 73 dB and a gain-bandwidth product of 18.6 MHz. The accuracy remains above 96.5% across a wide range of temperatures, input voltages, load currents, and device mismatches.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
