GHILIONI, ANDREA
 Distribuzione geografica
Continente #
NA - Nord America 403
EU - Europa 302
AS - Asia 241
AF - Africa 3
Totale 949
Nazione #
US - Stati Uniti d'America 402
CN - Cina 225
IE - Irlanda 113
IT - Italia 53
FI - Finlandia 40
UA - Ucraina 29
DE - Germania 19
SE - Svezia 16
GB - Regno Unito 13
BE - Belgio 8
SG - Singapore 8
IN - India 5
AT - Austria 3
FR - Francia 3
NL - Olanda 3
EG - Egitto 2
TW - Taiwan 2
CA - Canada 1
DK - Danimarca 1
HK - Hong Kong 1
MU - Mauritius 1
RU - Federazione Russa 1
Totale 949
Città #
Dublin 113
Chandler 111
Nanjing 58
Jacksonville 52
Beijing 42
Ann Arbor 32
Pavia 29
Shanghai 27
Nanchang 20
Helsinki 17
Changsha 16
Ashburn 15
Hebei 15
Lawrence 15
Princeton 15
Wilmington 14
Medford 13
Shenyang 12
Duncan 11
Jiaxing 11
Hangzhou 10
Tianjin 8
Brussels 7
Milan 6
Singapore 6
Houston 5
Boardman 4
Moretta 4
Norwalk 3
Pune 3
Woodbridge 3
Al Mansurah 2
Bengaluru 2
Cerignola 2
Fairfield 2
Linz 2
Los Angeles 2
Orange 2
Somma Lombardo 2
Taipei 2
Andover 1
Atlanta 1
Auburn Hills 1
Berlin 1
Central 1
Council Bluffs 1
Guangzhou 1
Halle 1
Kemerovo 1
Mcallen 1
Redwood City 1
Rende 1
Reston 1
Santa Ynez 1
Saratoga 1
Taizhou 1
Tappahannock 1
Triggiano 1
Vigasio 1
Villach 1
Wuhan 1
Zhengzhou 1
Totale 737
Nome #
A 4.8mW inductorless CMOS Frequency Divider-by-4 with more than 60% Fractional Bandwidth up to 70GHz 93
A 40–67 GHz Power Amplifier With 13 dBm PSAT and 16% PAE in 28 nm CMOS LP 92
A Wide Tuning Range mm-Wave LC VCO 85
Insights Into Silicon Photonics Mach–Zehnder-Based Optical Transmitter Architectures 78
A 56Gb/s 300mW silicon-photonics transmitter in 3D-integrated PIC25G and 55nm BiCMOS technologies 73
A mm-wave quadrature VCO based on magnetically coupled resonators 72
A 40–67GHz Power Amplifier with 13dBm PSAT and 16% PAE in 28nm CMOS LP 67
A 6.5mW Inductorless CMOS Frequency Divider by 4 Operating up to 70GHz 63
A 25Gb/s 3D-integrated silicon photonics receiver in 65nm CMOS and PIC25G for 100GbE optical links 61
23.4 A 56Gb/s 300mW silicon-photonics transmitter in 3D-integrated PIC25G and 55nm BiCMOS technologies 59
Analysis and Design of mm-Wave Frequency Dividers Based on Dynamic Latches With Load Modulation 53
A 5mW CMOS wideband mm-wave front-end featuring 17dB of conversion gain and 6.5 dB minimum NF 52
A 40GHz to 67GHz bandwidth 23dB gain 5.8dB maximum NF mm-Wave LNA in 28nm CMOS 52
A 1310nm 3D-integrated silicon photonics Mach-Zehnder-based transmitter with 275mW multistage CMOS driver achieving 6dB extinction ratio at 25Gb/s 48
A Low-Noise Quadrature VCO Based on Magnetically Coupled Resonators and a Wideband Frequency Divider at Millimeter Waves 37
Totale 985
Categoria #
all - tutte 3.678
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 3.678


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020173 0 90 1 6 1 8 5 7 1 21 32 1
2020/202197 8 6 3 8 3 9 2 12 9 14 20 3
2021/202285 2 3 3 4 0 5 4 1 6 2 11 44
2022/2023301 33 37 2 18 21 24 2 20 135 5 3 1
2023/2024102 21 14 3 3 7 13 2 5 0 13 4 17
2024/202510 9 1 0 0 0 0 0 0 0 0 0 0
Totale 985