IRIS
CABRINI, ALESSANDRO
 Distribuzione geografica
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Continente #
NA - Nord America 6.925
AS - Asia 3.492
EU - Europa 3.090
SA - Sud America 459
AF - Africa 188
OC - Oceania 10
Totale 14.164
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Nazione #
US - Stati Uniti d'America 6.834
CN - Cina 1.814
IE - Irlanda 805
SG - Singapore 745
DE - Germania 377
RU - Federazione Russa 360
UA - Ucraina 352
BR - Brasile 350
HK - Hong Kong 328
IT - Italia 287
VN - Vietnam 262
FI - Finlandia 254
GB - Regno Unito 169
SE - Svezia 160
FR - Francia 157
ZA - Sudafrica 129
IN - India 82
CA - Canada 44
BE - Belgio 42
BD - Bangladesh 39
AR - Argentina 31
MX - Messico 28
PL - Polonia 28
IQ - Iraq 27
JP - Giappone 22
EC - Ecuador 21
ES - Italia 21
NL - Olanda 21
TR - Turchia 20
CO - Colombia 19
PK - Pakistan 18
VE - Venezuela 16
SA - Arabia Saudita 14
MA - Marocco 12
UZ - Uzbekistan 12
CL - Cile 11
ID - Indonesia 11
PH - Filippine 11
JO - Giordania 9
MY - Malesia 8
AT - Austria 7
AU - Australia 7
KZ - Kazakistan 7
RO - Romania 7
DZ - Algeria 6
EG - Egitto 6
KG - Kirghizistan 6
LT - Lituania 6
NP - Nepal 6
AZ - Azerbaigian 5
CH - Svizzera 5
CR - Costa Rica 5
ET - Etiopia 5
IR - Iran 5
KE - Kenya 5
MU - Mauritius 5
PA - Panama 5
PY - Paraguay 5
TN - Tunisia 5
AL - Albania 4
IL - Israele 4
JM - Giamaica 4
KR - Corea 4
PT - Portogallo 4
RS - Serbia 4
AM - Armenia 3
BG - Bulgaria 3
LA - Repubblica Popolare Democratica del Laos 3
LV - Lettonia 3
LY - Libia 3
NG - Nigeria 3
PS - Palestinian Territory 3
TH - Thailandia 3
TW - Taiwan 3
UY - Uruguay 3
AE - Emirati Arabi Uniti 2
BA - Bosnia-Erzegovina 2
CZ - Repubblica Ceca 2
GE - Georgia 2
KH - Cambogia 2
LB - Libano 2
ME - Montenegro 2
NO - Norvegia 2
NZ - Nuova Zelanda 2
PE - Perù 2
QA - Qatar 2
SV - El Salvador 2
TJ - Tagikistan 2
AO - Angola 1
BH - Bahrain 1
BN - Brunei Darussalam 1
BO - Bolivia 1
BW - Botswana 1
BY - Bielorussia 1
CI - Costa d'Avorio 1
DK - Danimarca 1
EE - Estonia 1
GD - Grenada 1
GH - Ghana 1
GM - Gambi 1
Totale 14.150
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Città #
Dallas 2.461
Dublin 803
Chandler 700
San Jose 484
Jacksonville 457
Singapore 391
Nanjing 375
Ashburn 354
Hong Kong 318
Beijing 317
Boardman 176
Nanchang 174
Ann Arbor 156
Los Angeles 152
Johannesburg 118
Shenyang 118
Princeton 117
Lawrence 112
Medford 104
Ho Chi Minh City 103
Lauterbourg 101
Changsha 98
Wilmington 97
Hebei 95
Munich 92
Jiaxing 89
Buffalo 67
New York 65
Hangzhou 63
Shanghai 62
Milan 61
Moscow 60
Hanoi 57
Tianjin 56
Helsinki 44
Woodbridge 43
Pavia 41
Brussels 40
Redondo Beach 36
São Paulo 36
Frankfurt am Main 29
Des Moines 26
Orem 26
Warsaw 26
Santa Clara 23
Turku 23
Chicago 22
Norwalk 22
Tokyo 22
Seattle 20
Da Nang 19
Verona 18
Chennai 17
Houston 17
Denver 16
London 16
Rio de Janeiro 16
Toronto 16
Pune 15
San Francisco 15
Baghdad 14
Duncan 14
Falkenstein 14
Guangzhou 14
Fairfield 13
Haiphong 13
Montreal 13
Brooklyn 12
Nuremberg 12
Phoenix 12
Stockholm 12
Poplar 11
Florence 10
Kunming 10
Padova 10
Redwood City 10
Washington 10
Zhengzhou 10
Amman 9
Amsterdam 9
Atlanta 9
Council Bluffs 9
Guayaquil 9
Ningbo 9
Tashkent 9
Curitiba 8
Jinan 8
New Delhi 8
West Jordan 8
Dearborn 7
Salvador 7
Somma Lombardo 7
The Dalles 7
Belo Horizonte 6
Bishkek 6
Biên Hòa 6
Bologna 6
Boston 6
Caracas 6
Dhaka 6
Totale 10.076
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Nome #
A 0.13-µm CMOS NOR Flash memory experimental chip for 4-b/cell digital storage 2.555
A 1 V, 26 µW extended temperature range band-gap reference in 130-nm CMOS technology 179
Enhanced voltage buffer compensation technique for two-stage CMOS operational amplifiers 169
Cancellation of Amplifier Offset and 1/f Noise: An Improved Chopper Stabilized Technique 157
A 32-KB ePCM for real-time data processing in automotive and smart power applications 151
A 1.2 V sense amplifier for high-performance embeddable NOR Flash memories 147
A compact low-cost test equipment for thermal and electrical characterization of integrated circuits 141
Design of maximum-efficiency integrated voltage doubler 134
A theoretical discussion on performance limits of CMOS charge pumps 134
Impact of parasitic elements on CMOS charge pumps: a numerical analysis 131
High-efficiency CMOS charge pump 131
A discussion on exponential gain charge pump 130
On the effect of cell geometry on the amorphization process in phase-change memories 128
A small-size, fast-settling, low-cost thermal regulator for chip surface measurements 127
A bipolar-selected phase-change memory featuring multi-level cell storage 126
On-wafer integrated system for fast characterization and parametric test of new-generation Non Volatile Memories 125
Enhanced charge pump for ultra-low-voltage applications 123
Single-ended phase-change memory device and reading method 123
Effects of alloy composition on multilevel operation in self-heating Phase Change Memories 122
On-wafer analog pulse generator for fast characterization and parametric test of resistive switching memories 121
Modeling of partial-RESET dynamics in Phase Change Memories 120
A versatile and compact USB system for electrical and thermal characterization of non-volatile memories 119
Efficiency comparison between doubler and Dickson charge pumps 118
A novel programming technique to boost low-resistance state performance in Ge-rich GST Phase Change Memory 118
A Very Fast and Low-power Time-discrete Spread-spectrum Signal Generator 115
A test chip for contact and via failure analysis for 90-nm copper interconnect CMOS technology 115
Voltage-driven multilevel programming in phase change memories 114
Data retention of partial-SET states in phase change memories 114
Theoretical and experimental analysis of Dickson charge pump output resistance 113
Theoretical analysis of the RESET operation in phase-change memories 113
A theoretical charge transfer scheme for efficiency optimization of integrated charge pumps 113
CMOS discrete-time chaotic circuit for low-power embedded cryptosystems 112
High input range sense comparator for multilevel Flash memories 112
Challenges and opportunities for information theory-based design of Phase Change Memories 112
A charge transfer scheme for efficiency optimization in integrated charge pumps 110
A circuit for linearly decreasing temperature SET programming of PCM based on Ge-rich GST 110
A failure analysis test structure for deep sub-micron CMOS copper interconnect technologies 109
Programming a multilevel phase change memory cell 109
Temperature dependence of the programmed states in GST-based multilevel phase-change memories 108
Voltage gain analysis of integrated Fibonacci-like charge pumps for low-power applications 108
A charge pump with enhanced charge transfer for energy harvesting applications 108
High-accuracy program scheme for multilevel Flash memories 107
Thermal regulator for IC temperature characterization using a microprobe station 107
Method for multilevel programming of phase change memory cells using adaptive reset pulses 107
Algorithm for automatic design of maximum-efficiency Dickson charge pumps 107
Current tracking technique enabling 1-bit/cell storage in Ge-rich phase change memory 107
Current pulse generator for multilevel cell programming of innovative PCM 107
Effect of technology scaling on program and read window in phase change memories 106
Transient effects in partial-RESET programming of phase change memory cells 106
System and method for a multistage operational amplifier 106
On voltage-driven multilevel programming in phase change memory cells 105
2-Mb embedded phase change memory with 16-ns read access time and 5-Mb/s write throughput in 90-nm BCD technology for automotive applications 104
High-efficiency control structure for CMOS Flash memory charge pumps 103
A comprehensive Verilog-A behavioral model of Spin-Transfer Torque memory cell 103
Analysis of array biasing in crosspoint memories for leakage power minimization 103
High-swing buffer for programmable resistive memories 103
Sound representation in higher language areas during language generation. 103
2-Mb embedded phase change memory with 16-ns read access time and 5-Mb/s write throughput in 90-nm BCD technology for automotive applications 103
Tracking of the speech envelope by neural activity during speech production is not limited to Broca's area in the dominant frontal lobe 102
A 32KB 18ns random access time embedded PCM with enhanced program throughput for automotive and smart power applications 102
Experimental analysis of partial-SET state stability in phase change memories 102
Use of the non-linear Chua's circuit for on-line offset calibration of ADC 101
Statistical modeling of bit distributions in phase change memories 101
Power efficiency evaluation in Dickson and voltage doubler charge pump topologies 100
Improved charge pump for Flash memory applications in triple-well CMOS technology 99
Temperature study of high-drive capability buffer for Phase Change Memories 98
Intrinsic program instability in HfO2 RRAM and consequences on program algorithms 98
Impact of technology scaling of phase-change memory performance 97
Compact model for phase change memory cells 97
Enhanced multiple-output programmable current pulse generator 97
On-Line Calibration of Offset and Gain Mismatch in Time-Interleaved ADC Using a Sampled-Data Chaotic Bit-Stream 96
Impact of control signal skews on self-boosted charge pumps 96
Dependence of resistance drift on the amorphous cap size in phase change memory arrays 96
SET Performance Improvement in Phase Change Memory Based on Innovative materials Featuring High Temperature Data Retention 96
Optimal programming with voltage-controlled temperature profile to reduce SET state distribution dispersion in PCM 96
Drift-driven investigation of phase distribution in Phase-Change Memories 95
An integrated multi-physics approach to the modeling of a phase-change memory device 94
Feasibility study of partial-RESET multilevel programming in Phase Change Memories 94
Low-field resistance drift in partial-SET states in Phase Change Memories 94
Trade-off between SET and data retention performance thanks to innovative materials for Phase-Change Memory 94
Temperature tracking current reference for multilevel phase-change memories 93
Experimental evaluation of a low-power sense comparator for multilevel Flash memories 93
Impact of control signal non-idealities on two-phase charge pumps 92
Exploiting process variations and programming sensitivity of Phase Change Memory for reconfigurable physical unclonable functions 92
High-drive capability buffer for highly variable resistive loads 91
Novel test strategy for statistical evaluation of defect density and reliability of contacts and vias 89
A test structure for contact and via failure analysis in deep-submicrometer CMOS technologies 89
Development and Analysis of a PCB Vector 2-D Magnetic Field Sensor System for Electronic Compasses 89
Optimization of low-resistance state performance in Ge-rich GST Phase Change Memory 89
Bandwidth optimization of CMOS two-stage operational amplifiers under power consumption and area constraints 88
Magnetic field analysis for the optimization of a GMR isolator for data transmission in power applications 87
Automatic trimming procedure to enhance the accuracy of on-chip analog pulse generators 86
High-efficiency regulator for on-chip charge pump voltage elevators 85
Method for designing integrated charge pumps with minimum area 85
Optimized temperature profile based pulse generator for innovative Phase Change Memory 85
Current reference scheme for multilevel Phase-Change Memory sensing 84
Integrated charge pumps: a generalized method for power efficiency optimization 83
A variability-aware analysis and design guideline for write and read operations in crosspoint STT-MRAM arrays 81
Drift induced rigid current shift in Ge-Rich GST Phase Change Memories in low resistance state 81
Ultra-Low-Power Low-Input-Voltage Charge Pump for Micro-Energy Harvesting Applications 80
Totale 13.198
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Categoria #
all - tutte 49.169
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 49.169
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021202 0 0 0 0 0 0 0 0 0 103 81 18
2021/2022577 4 7 19 11 9 39 23 33 25 36 81 290
2022/20232.033 199 196 16 147 177 214 1 102 908 11 43 19
2023/2024550 42 117 21 35 59 123 16 39 7 39 32 20
2024/20251.834 32 133 50 102 75 34 59 111 494 86 206 452
2025/20266.080 350 935 1.938 488 484 232 743 295 399 216 0 0
Totale 14.448