IRIS
RATTI, LODOVICO
 Distribuzione geografica
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Continente #
NA - Nord America 6.084
EU - Europa 4.492
AS - Asia 3.451
AF - Africa 14
Continente sconosciuto - Info sul continente non disponibili 7
OC - Oceania 5
SA - Sud America 3
Totale 14.056
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Nazione #
US - Stati Uniti d'America 6.031
CN - Cina 3.081
IE - Irlanda 1.321
UA - Ucraina 824
FI - Finlandia 593
DE - Germania 544
SE - Svezia 440
IT - Italia 373
SG - Singapore 306
GB - Regno Unito 219
FR - Francia 73
CA - Canada 52
BE - Belgio 31
RU - Federazione Russa 28
IN - India 18
JP - Giappone 15
MU - Mauritius 11
NL - Olanda 9
CZ - Repubblica Ceca 8
IR - Iran 7
AL - Albania 6
EU - Europa 6
CH - Svizzera 5
GR - Grecia 5
HK - Hong Kong 5
LT - Lituania 4
PK - Pakistan 4
AR - Argentina 3
MY - Malesia 3
NZ - Nuova Zelanda 3
PL - Polonia 3
AU - Australia 2
BD - Bangladesh 2
DZ - Algeria 2
LV - Lettonia 2
TR - Turchia 2
TW - Taiwan 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AE - Emirati Arabi Uniti 1
AZ - Azerbaigian 1
BA - Bosnia-Erzegovina 1
DO - Repubblica Dominicana 1
ES - Italia 1
HU - Ungheria 1
ID - Indonesia 1
KG - Kirghizistan 1
KH - Cambogia 1
SK - Slovacchia (Repubblica Slovacca) 1
VN - Vietnam 1
ZA - Sudafrica 1
Totale 14.056
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Città #
Dublin 1.321
Chandler 1.297
Jacksonville 1.049
Nanjing 937
Boardman 454
Ashburn 374
Nanchang 369
Princeton 293
Lawrence 285
Medford 277
Wilmington 272
Shenyang 267
Hebei 245
Changsha 230
Singapore 220
Jiaxing 211
Beijing 190
Hangzhou 169
Tianjin 153
Helsinki 143
Ann Arbor 142
Pavia 118
Milan 76
Shanghai 75
Woodbridge 64
Munich 41
Norwalk 40
Verona 40
New York 39
Des Moines 36
Los Angeles 30
Mcallen 30
Toronto 30
Brussels 29
Seattle 29
Fairfield 22
Houston 22
Ningbo 22
Jinan 20
Chicago 18
Zhengzhou 18
Duncan 17
Guangzhou 17
Monsummano Terme 17
Auburn Hills 14
Tokyo 13
Washington 13
Kunming 12
Montréal 12
Fuzhou 10
Augusta 9
Dalmine 9
Nürnberg 9
Taizhou 9
West Jordan 8
Dallas 7
Leawood 7
London 7
Orange 7
Pune 7
Borås 6
Changchun 6
Cormano 6
Lanzhou 6
Meda 6
Tirana 6
Bergamo 5
Turin 5
Bengaluru 4
Bologna 4
Buffalo 4
Geneva 4
Mascalucia 4
Redmond 4
Taiyuan 4
České Budějovice 4
Bayreuth 3
Como 3
Dearborn 3
Frankfurt am Main 3
Haikou 3
Hamburg 3
Hanover 3
Harbin 3
Monza 3
Moscow 3
Mountain View 3
Ottawa 3
Phoenix 3
Reggio Emilia 3
San Mateo 3
Somma Lombardo 3
Trieste 3
Andover 2
Ardabil 2
Arezzo 2
Bangalore 2
Baoding 2
Cedar Knolls 2
Cornaredo 2
Totale 10.044
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Nome #
0.13 um CMOS technologies for radiation hardness analog front-end circuits in LHC upgrades 186
Impact of low-dose electron irradiation on n+p silicon strip sensors 166
A 2D Imager for X-Ray FELs with a 65 nm CMOS Readout Based on per-Pixel Signal Compression and 10 Bit A/D Conversion 145
Characterization of a large scale DNW MAPS fabricated in a 3D integration process 94
Active pixel sensors with enhanced pixel-level analog and digital functionalities in a 2-tier 3D CMOS technology 93
PixFEL: Developing a Fine Pitch, Fast 2D X-Ray Imager for the Next Generation X-FELs 91
A 10 bit resolution readout channel with dynamic range compression for X-ray imaging at FELs 84
Advances in the development of pixel detector for the SuperB Silicon Vertex Tracker 80
Design and characterization of integrated front-end transistors in a microstrip detector technology 79
2D and 3D CMOS MAPS with high performance pixel-level signal processing 79
Monolithic Pixel Sensors for Fast Silicon Vertex Trackers in a Quadruple Well CMOS Technology 78
The PixFEL Project: Development of Advanced X-Ray Pixel Detectors for Application at Future FEL Facilities 78
Radiation effects on the noise parameters of a 0.18um CMOS technology for detector front-end applications 78
CMOS MAPS with pixel level sparsification and time stamping capabilities for applications at the ILC 76
A 3D Vertically Integrated Deep N-Well CMOS MAPS for the SuperB Layer0 76
Effects induced by gamma-radiation on P and N-channel junction field effect transistors 75
130 and 90 nm CMOS technologies for detector front-end applications 75
The BABAR Detector 73
Noise performance of 0.13 μm CMOS technologies for detector front-end applications 72
A 65-nm CMOS prototype chip with monolithic pixel sensors and fast front-end electronics 71
Front-end electronics for energy and position measurements with semiconductor radiation detectors 70
Noise limits of AToM, a 128 channel CMOS readout chip in applications with room temperature high granularity detectors 70
The analog signal processor of the auger fluorescence detector prototype 70
CMOS technologies in the 100 nm range for rad-hard front-end electronics in future collider experiments. 70
Deep submicron CMOS transistors for low-noise front-end systems 70
Impact of Lateral Isolation Oxides on Radiation-Induced Noise Degradation in CMOS Technologies in the 100-nm Regime 69
Analog design criteria for high-granularity detector readout in the 65 nm CMOS technology 69
In-Pixel Conversion with a 10 Bit SAR ADC for Next Generation X-Ray FELs 69
Design and Performance of a DNW CMOS Active Pixel Sensor for the ILC Vertex Detector 69
Low-noise design criteria for detector readout systems in deep submicron CMOS technology 69
A 4096-pixel MAPS device with on-chip data sparsification 69
Discriminators in 65 nm CMOS process for high granularity, high time resolution pixel detectors 68
The analog signal processing system for the Auger fluorescence detector prototype 68
Continuous Time-Charge Amplification and Shaping in CMOS Monolithic Sensors for Particle Tracking 67
A novel monolithic active pixel detector in 0.13 μm triple well CMOS technology with pixel level analog processing 67
Proton induced damage in JFET transistors and charge preamplifiers on high-resistivity silicon 67
Noise Behavior of a 180 nm CMOS SOI Technology for Detector Front-End Electronics 67
The analog signal processing system for the Auger fluorescence detector prototype 67
A Pixelated X-Ray Detector for Diffraction Imaging at Next-Generation High-Rate FEL Sources 67
A 3D deep n-well CMOS MAPS for the ILC vertex detector 66
2D and 3D thin pixel technologies for the Layer0 of the SuperB Silicon Vertex Tracker 66
The BaBar Silicon Vertex Tracker: Performance, running experience and radiation damage studies 66
The Apsel65 front-end chip for the readout of pixel sensors in the 65 nm CMOS node 66
Response of SOI bipolar transistors exposed to gamma-rays under different dose rate and bias conditions 66
Performance of the BABAR silicon vertex tracker 65
Bulk damage in proton irradiated JFET transistors and charge preamplifiers on high resistivity silicon 65
Noise characterization of 130 nm and 90 nm CMOS technologies for analog front-end electronics 65
Lessons learned from babar silicon vertex tracker, limits and future perspectives of the detector 65
An ionization chamber shower detector for the LHC luminosity monitor 65
Evaluation of the radiation tolerance of 65 nm CMOS devices for high-density front-end electronics 65
PFM2: a 32×32 Processor for X-Ray Diffraction Imaging at FELs 65
CMOS MAPS with fully integrated, hybrid-pixel-like analog front-end electronics 64
Radiation tolerance of a 0.18 um CMOS process 64
Analog front-end for pixel sensors in a 3D CMOS technology for the SuperB Layer0 64
Modeling Charge Loss in CMOS MAPS Exposed to Non-Ionizing Radiation 64
Total Ionizing Dose effects in 130-nm commercial CMOS technologies for HEP experiments 63
Integrated front-end electronics in a detector compatible process: source-follower and charge-sensitive preamplifier configuration 63
65-nm CMOS Front-End Channel for Pixel Readout in the HL-LHC Radiation Environment 63
Development of a detector for bunch by bunch measurements and optimization of luminosity in the LHC 63
Monolithic sensors in deep submicron CMOS technology for low material budget, high rate HEP applications 62
Radiation hardness and monitoring of the BaBar vertex tracker 62
Deep n-well MAPS in a 130 nm CMOS technology: Beam test results 62
Fabrication of Microstrip Detectors and Integrated Electronics on High Resistivity Silicon 62
The high rate data acquisition system for the SLIM5 beam test 62
DCR Performance in Neutron-Irradiated CMOS SPADs from 150- To 180-nm Technologies 62
Noise performances of 0.13 um CMOS technologies for detector front-end applications 61
The associative memory for the self-triggered SLIM5 silicon telescope 61
First generation of deep n-well CMOS MAPS with in-pixel sparsication for the ILC vertex detector 61
The superB silicon vertex tracker 61
Vertically integrated deep N-well CMOS MAPS with sparsification and time stamping capabilities for thin charged particle trackers 61
First results from the characterization of a three-dimensional deep N-well MAPS prototype for vertexing applications 61
Noise degradation induced by γ-rays on P- and N-channel junction field-effect transistors 60
Instrumentation for gate current noise measurements on sub-100 nm MOS transistors 60
Monolithic pixel detectors in a 0.13 um CMOS technology with sensor level continuous time charge amplification and shaping 60
Alignment of the CMS tracker with LHC and cosmic ray data 60
The PixFEL Front-End for X-Ray Imaging in the Radiation Environment of Next Generation FELs 60
Low noise junction field effect transistors in a silicon radiation detector technology 59
Instrumentation for noise measurements on CMOS transistors for fast detector preamplifiers 59
JFET preamplifiers with different reset techniques on detector-grade high-resistivity silicon 59
A study for the detection of ionizing particles with phototransistors on thick high-resistivity silicon substrates 59
Beam-test results of 4k pixel CMOS MAPS and high resistivity striplet detectors equipped with digital sparsied readout in the Slim5 low mass silicon demonstrator 59
Recent development on triple well 130 nm CMOS MAPS with in-pixel signal processing and data sparsification capability 59
Optimum Design of DACs for Threshold Correction in Multichannel Processors for Radiation Detectors 59
Performance of the BaBar silicon vertex tracker 59
The PixFEL Project: Progress towards a Fine Pitch X-Ray Imaging Camera for Next Generation FEL Facilities 59
TID Effects in Deep N-Well CMOS Monolithic Active Pixel Sensors 59
Assessment of a Low-Power 65 nm CMOS Technology for Analog Front-End Design 59
Effects of substrate thinning on the properties of quadruple well CMOS MAPS 59
Radiation hardness study of proton irradiated SOI bipolar transistors 58
MAPS in 130 nm triple well CMOS technology for HEP applications 58
Radiation damage studies of detector-compatible Si JFETs 58
A new approach to the design of monolithic active pixel detectors in 0.13 um triple well CMOS technology 58
Front-end electronics in a 65 nm CMOS process for high density readout of pixel sensors 58
Monolithic integration of detectors and transistors on high-resistivity silicon 58
Radiation hardness characterization of the front-end chip for the BaBar silicon vertex tracker 58
Vertex detector for the SuperB Factory 57
The first fully functional 3D CMOS chip with Deep N-well active pixel sensors for the ILC vertex detector 57
An improved fabrication process for Si-detector-compatible JFETs 57
An ionization chamber shower detector for the LHC luminosity monitor 57
Dynamic Compression of the Signal in a Charge Sensitive Amplifier: From Concept to Design 57
Totale 6.881
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Categoria #
all - tutte 64.292
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 64.292
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020751 0 0 0 0 0 156 15 169 4 190 166 51
2020/20211.684 202 131 61 186 11 208 14 260 86 268 196 61
2021/20221.294 9 5 46 24 43 43 41 71 82 63 176 691
2022/20233.754 434 219 30 281 408 415 5 226 1.573 16 98 49
2023/20241.330 112 301 55 79 148 272 27 102 17 48 110 59
2024/2025767 63 343 77 197 70 17 0 0 0 0 0 0
Totale 14.607