IRIS
RATTI, LODOVICO
 Distribuzione geografica
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Continente #
NA - Nord America 6.030
EU - Europa 4.454
AS - Asia 3.195
AF - Africa 14
Continente sconosciuto - Info sul continente non disponibili 7
OC - Oceania 5
SA - Sud America 2
Totale 13.707
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Nazione #
US - Stati Uniti d'America 5.986
CN - Cina 3.078
IE - Irlanda 1.320
UA - Ucraina 824
FI - Finlandia 590
DE - Germania 536
SE - Svezia 440
IT - Italia 360
GB - Regno Unito 217
FR - Francia 73
SG - Singapore 60
CA - Canada 44
BE - Belgio 30
RU - Federazione Russa 28
IN - India 18
JP - Giappone 13
MU - Mauritius 11
CZ - Repubblica Ceca 7
NL - Olanda 7
AL - Albania 6
EU - Europa 6
IR - Iran 6
CH - Svizzera 5
GR - Grecia 5
HK - Hong Kong 4
PK - Pakistan 4
MY - Malesia 3
NZ - Nuova Zelanda 3
PL - Polonia 3
AR - Argentina 2
AU - Australia 2
BD - Bangladesh 2
DZ - Algeria 2
TR - Turchia 2
TW - Taiwan 2
A2 - ???statistics.table.value.countryCode.A2??? 1
BA - Bosnia-Erzegovina 1
ES - Italia 1
ID - Indonesia 1
KH - Cambogia 1
LV - Lettonia 1
VN - Vietnam 1
ZA - Sudafrica 1
Totale 13.707
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Città #
Dublin 1.320
Chandler 1.297
Jacksonville 1.049
Nanjing 937
Boardman 454
Ashburn 371
Nanchang 369
Princeton 293
Lawrence 285
Medford 277
Wilmington 272
Shenyang 267
Hebei 245
Changsha 230
Jiaxing 211
Beijing 190
Hangzhou 169
Tianjin 153
Ann Arbor 142
Helsinki 140
Pavia 114
Milan 76
Shanghai 74
Woodbridge 64
Norwalk 40
Verona 40
New York 38
Des Moines 36
Munich 34
Singapore 31
Mcallen 30
Seattle 29
Brussels 28
Los Angeles 28
Toronto 25
Fairfield 22
Houston 22
Ningbo 22
Jinan 20
Chicago 18
Zhengzhou 18
Duncan 17
Guangzhou 17
Monsummano Terme 17
Auburn Hills 14
Washington 13
Kunming 12
Montréal 12
Tokyo 12
Fuzhou 10
Augusta 9
Dalmine 9
Nürnberg 9
Taizhou 9
West Jordan 8
Dallas 7
Leawood 7
Orange 7
Pune 7
Borås 6
Changchun 6
Cormano 6
Lanzhou 6
London 6
Meda 6
Tirana 6
Bergamo 5
Turin 5
Bengaluru 4
Bologna 4
Buffalo 4
Geneva 4
Mascalucia 4
Redmond 4
Taiyuan 4
České Budějovice 4
Bayreuth 3
Como 3
Dearborn 3
Haikou 3
Hamburg 3
Hanover 3
Harbin 3
Monza 3
Moscow 3
Mountain View 3
Phoenix 3
San Mateo 3
Somma Lombardo 3
Trieste 3
Andover 2
Ardabil 2
Bangalore 2
Baoding 2
Cedar Knolls 2
Cornaredo 2
Falkenstein 2
Forest City 2
Frankfurt am Main 2
Groningen 2
Totale 9.822
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Nome #
0.13 um CMOS technologies for radiation hardness analog front-end circuits in LHC upgrades 178
Impact of low-dose electron irradiation on n+p silicon strip sensors 165
A 2D Imager for X-Ray FELs with a 65 nm CMOS Readout Based on per-Pixel Signal Compression and 10 Bit A/D Conversion 142
Active pixel sensors with enhanced pixel-level analog and digital functionalities in a 2-tier 3D CMOS technology 92
Characterization of a large scale DNW MAPS fabricated in a 3D integration process 92
PixFEL: Developing a Fine Pitch, Fast 2D X-Ray Imager for the Next Generation X-FELs 86
A 10 bit resolution readout channel with dynamic range compression for X-ray imaging at FELs 81
Design and characterization of integrated front-end transistors in a microstrip detector technology 78
Monolithic Pixel Sensors for Fast Silicon Vertex Trackers in a Quadruple Well CMOS Technology 77
Advances in the development of pixel detector for the SuperB Silicon Vertex Tracker 77
2D and 3D CMOS MAPS with high performance pixel-level signal processing 76
Radiation effects on the noise parameters of a 0.18um CMOS technology for detector front-end applications 76
Effects induced by gamma-radiation on P and N-channel junction field effect transistors 75
The PixFEL Project: Development of Advanced X-Ray Pixel Detectors for Application at Future FEL Facilities 75
The BABAR Detector 73
CMOS MAPS with pixel level sparsification and time stamping capabilities for applications at the ILC 73
A 3D Vertically Integrated Deep N-Well CMOS MAPS for the SuperB Layer0 73
130 and 90 nm CMOS technologies for detector front-end applications 72
Noise performance of 0.13 μm CMOS technologies for detector front-end applications 71
Noise limits of AToM, a 128 channel CMOS readout chip in applications with room temperature high granularity detectors 70
The analog signal processor of the auger fluorescence detector prototype 69
Deep submicron CMOS transistors for low-noise front-end systems 69
A 65-nm CMOS prototype chip with monolithic pixel sensors and fast front-end electronics 69
Low-noise design criteria for detector readout systems in deep submicron CMOS technology 69
CMOS technologies in the 100 nm range for rad-hard front-end electronics in future collider experiments. 68
Front-end electronics for energy and position measurements with semiconductor radiation detectors 67
Impact of Lateral Isolation Oxides on Radiation-Induced Noise Degradation in CMOS Technologies in the 100-nm Regime 67
Analog design criteria for high-granularity detector readout in the 65 nm CMOS technology 67
Discriminators in 65 nm CMOS process for high granularity, high time resolution pixel detectors 67
The analog signal processing system for the Auger fluorescence detector prototype 67
The analog signal processing system for the Auger fluorescence detector prototype 67
Continuous Time-Charge Amplification and Shaping in CMOS Monolithic Sensors for Particle Tracking 66
Proton induced damage in JFET transistors and charge preamplifiers on high-resistivity silicon 66
The Apsel65 front-end chip for the readout of pixel sensors in the 65 nm CMOS node 66
Noise Behavior of a 180 nm CMOS SOI Technology for Detector Front-End Electronics 66
In-Pixel Conversion with a 10 Bit SAR ADC for Next Generation X-Ray FELs 66
A 4096-pixel MAPS device with on-chip data sparsification 66
The BaBar Silicon Vertex Tracker: Performance, running experience and radiation damage studies 65
Response of SOI bipolar transistors exposed to gamma-rays under different dose rate and bias conditions 65
Performance of the BABAR silicon vertex tracker 64
Noise characterization of 130 nm and 90 nm CMOS technologies for analog front-end electronics 64
Radiation tolerance of a 0.18 um CMOS process 64
A novel monolithic active pixel detector in 0.13 μm triple well CMOS technology with pixel level analog processing 64
A 3D deep n-well CMOS MAPS for the ILC vertex detector 64
Lessons learned from babar silicon vertex tracker, limits and future perspectives of the detector 64
A Pixelated X-Ray Detector for Diffraction Imaging at Next-Generation High-Rate FEL Sources 64
Bulk damage in proton irradiated JFET transistors and charge preamplifiers on high resistivity silicon 63
2D and 3D thin pixel technologies for the Layer0 of the SuperB Silicon Vertex Tracker 63
Analog front-end for pixel sensors in a 3D CMOS technology for the SuperB Layer0 63
Modeling Charge Loss in CMOS MAPS Exposed to Non-Ionizing Radiation 63
Evaluation of the radiation tolerance of 65 nm CMOS devices for high-density front-end electronics 63
Total Ionizing Dose effects in 130-nm commercial CMOS technologies for HEP experiments 62
Integrated front-end electronics in a detector compatible process: source-follower and charge-sensitive preamplifier configuration 62
65-nm CMOS Front-End Channel for Pixel Readout in the HL-LHC Radiation Environment 62
Development of a detector for bunch by bunch measurements and optimization of luminosity in the LHC 62
PFM2: a 32×32 Processor for X-Ray Diffraction Imaging at FELs 62
CMOS MAPS with fully integrated, hybrid-pixel-like analog front-end electronics 61
Monolithic sensors in deep submicron CMOS technology for low material budget, high rate HEP applications 61
Radiation hardness and monitoring of the BaBar vertex tracker 61
First results from the characterization of a three-dimensional deep N-well MAPS prototype for vertexing applications 61
Fabrication of Microstrip Detectors and Integrated Electronics on High Resistivity Silicon 61
The high rate data acquisition system for the SLIM5 beam test 61
An ionization chamber shower detector for the LHC luminosity monitor 61
Noise performances of 0.13 um CMOS technologies for detector front-end applications 60
The associative memory for the self-triggered SLIM5 silicon telescope 60
First generation of deep n-well CMOS MAPS with in-pixel sparsication for the ILC vertex detector 60
Vertically integrated deep N-well CMOS MAPS with sparsification and time stamping capabilities for thin charged particle trackers 60
Deep n-well MAPS in a 130 nm CMOS technology: Beam test results 60
Design and Performance of a DNW CMOS Active Pixel Sensor for the ILC Vertex Detector 60
Noise degradation induced by γ-rays on P- and N-channel junction field-effect transistors 59
Instrumentation for gate current noise measurements on sub-100 nm MOS transistors 59
Monolithic pixel detectors in a 0.13 um CMOS technology with sensor level continuous time charge amplification and shaping 59
The superB silicon vertex tracker 59
Alignment of the CMS tracker with LHC and cosmic ray data 59
Effects of substrate thinning on the properties of quadruple well CMOS MAPS 59
Low noise junction field effect transistors in a silicon radiation detector technology 58
Instrumentation for noise measurements on CMOS transistors for fast detector preamplifiers 58
JFET preamplifiers with different reset techniques on detector-grade high-resistivity silicon 58
Recent development on triple well 130 nm CMOS MAPS with in-pixel signal processing and data sparsification capability 58
Optimum Design of DACs for Threshold Correction in Multichannel Processors for Radiation Detectors 58
Performance of the BaBar silicon vertex tracker 58
Front-end electronics in a 65 nm CMOS process for high density readout of pixel sensors 58
Monolithic integration of detectors and transistors on high-resistivity silicon 58
Radiation hardness characterization of the front-end chip for the BaBar silicon vertex tracker 58
DCR Performance in Neutron-Irradiated CMOS SPADs from 150- To 180-nm Technologies 58
Assessment of a Low-Power 65 nm CMOS Technology for Analog Front-End Design 58
Radiation hardness study of proton irradiated SOI bipolar transistors 57
MAPS in 130 nm triple well CMOS technology for HEP applications 57
Radiation damage studies of detector-compatible Si JFETs 57
A new approach to the design of monolithic active pixel detectors in 0.13 um triple well CMOS technology 57
A study for the detection of ionizing particles with phototransistors on thick high-resistivity silicon substrates 57
Beam-test results of 4k pixel CMOS MAPS and high resistivity striplet detectors equipped with digital sparsied readout in the Slim5 low mass silicon demonstrator 57
An improved fabrication process for Si-detector-compatible JFETs 57
The PixFEL Project: Progress towards a Fine Pitch X-Ray Imaging Camera for Next Generation FEL Facilities 57
TID Effects in Deep N-Well CMOS Monolithic Active Pixel Sensors 57
Vertex detector for the SuperB Factory 56
The first fully functional 3D CMOS chip with Deep N-well active pixel sensors for the ILC vertex detector 56
Optimization of signal extraction and front-end design in a fast, multigap ionization chamber 55
Impact of gate-leakage current noise in sub-100 nm CMOS front-end electronics 55
Initial test results of an ionization chamber shower detector for a LHC luminosity monitor 55
Totale 6.716
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Categoria #
all - tutte 56.400
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 56.400
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020924 0 0 7 157 9 156 15 169 4 190 166 51
2020/20211.684 202 131 61 186 11 208 14 260 86 268 196 61
2021/20221.294 9 5 46 24 43 43 41 71 82 63 176 691
2022/20233.754 434 219 30 281 408 415 5 226 1.573 16 98 49
2023/20241.330 112 301 55 79 148 272 27 102 17 48 110 59
2024/2025407 63 343 1 0 0 0 0 0 0 0 0 0
Totale 14.247