IRIS
SPEZIALI, VALERIA
 Distribuzione geografica
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Continente #
NA - Nord America 6.482
AS - Asia 2.972
EU - Europa 2.683
SA - Sud America 342
Continente sconosciuto - Info sul continente non disponibili 159
AF - Africa 61
OC - Oceania 7
Totale 12.706
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Nazione #
US - Stati Uniti d'America 6.408
CN - Cina 1.636
SG - Singapore 651
IE - Irlanda 559
UA - Ucraina 499
FI - Finlandia 308
DE - Germania 278
HK - Hong Kong 277
SE - Svezia 272
BR - Brasile 247
RU - Federazione Russa 212
VN - Vietnam 179
FR - Francia 162
GB - Regno Unito 152
IT - Italia 149
IN - India 43
CA - Canada 39
BD - Bangladesh 33
AR - Argentina 31
IQ - Iraq 29
ZA - Sudafrica 24
BE - Belgio 19
EC - Ecuador 18
AT - Austria 16
MX - Messico 16
ES - Italia 13
NL - Olanda 13
CO - Colombia 12
TR - Turchia 12
JP - Giappone 11
SA - Arabia Saudita 11
MY - Malesia 10
VE - Venezuela 10
PH - Filippine 9
PL - Polonia 9
CL - Cile 8
NP - Nepal 8
PK - Pakistan 8
ID - Indonesia 7
DO - Repubblica Dominicana 6
DZ - Algeria 6
UZ - Uzbekistan 6
AE - Emirati Arabi Uniti 5
JO - Giordania 5
KE - Kenya 5
LB - Libano 5
MU - Mauritius 5
OM - Oman 5
TN - Tunisia 5
CR - Costa Rica 4
LT - Lituania 4
PE - Perù 4
PY - Paraguay 4
RO - Romania 4
UY - Uruguay 4
AU - Australia 3
CH - Svizzera 3
CZ - Repubblica Ceca 3
ET - Etiopia 3
EU - Europa 3
GT - Guatemala 3
IR - Iran 3
JM - Giamaica 3
MA - Marocco 3
NI - Nicaragua 3
AZ - Azerbaigian 2
BG - Bulgaria 2
BH - Bahrain 2
BN - Brunei Darussalam 2
BO - Bolivia 2
EG - Egitto 2
GY - Guiana 2
IL - Israele 2
KZ - Kazakistan 2
NZ - Nuova Zelanda 2
TH - Thailandia 2
XK - ???statistics.table.value.countryCode.XK??? 2
AL - Albania 1
AM - Armenia 1
BA - Bosnia-Erzegovina 1
CI - Costa d'Avorio 1
CM - Camerun 1
CW - ???statistics.table.value.countryCode.CW??? 1
GA - Gabon 1
GE - Georgia 1
GM - Gambi 1
GN - Guinea 1
HR - Croazia 1
KG - Kirghizistan 1
KR - Corea 1
KW - Kuwait 1
LA - Repubblica Popolare Democratica del Laos 1
MZ - Mozambico 1
NA - Namibia 1
NC - Nuova Caledonia 1
NG - Nigeria 1
PS - Palestinian Territory 1
PT - Portogallo 1
RS - Serbia 1
SK - Slovacchia (Repubblica Slovacca) 1
Totale 12.552
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Città #
Dallas 2.474
Dublin 559
Chandler 552
Jacksonville 531
San Jose 524
Nanjing 428
Singapore 311
Hong Kong 268
Ashburn 266
Boardman 226
Nanchang 155
Beijing 152
Council Bluffs 138
Princeton 118
Shenyang 117
Lawrence 115
Wilmington 112
Medford 110
Hebei 106
Changsha 102
Jiaxing 97
Lauterbourg 95
Los Angeles 84
Ann Arbor 82
Hangzhou 81
Tianjin 76
Ho Chi Minh City 70
Helsinki 66
Buffalo 64
Milan 61
Hanoi 45
Moscow 40
Woodbridge 39
Shanghai 37
New York 32
Verona 31
Santa Clara 28
Toronto 24
Chicago 22
São Paulo 21
Des Moines 20
Munich 18
Norwalk 18
Redondo Beach 18
Brussels 17
Johannesburg 15
Baghdad 14
Guangzhou 14
Jinan 14
Nuremberg 14
Auburn Hills 13
Brooklyn 13
Fairfield 12
Frankfurt am Main 12
Ningbo 12
Orem 12
Seattle 12
Turku 12
Zhengzhou 12
London 11
Tokyo 10
Kunming 9
Phoenix 9
Warsaw 9
Augusta 8
Pavia 8
Rio de Janeiro 8
Taizhou 8
Vienna 8
West Jordan 8
Da Nang 7
Fuzhou 7
Houston 7
Meda 7
Quito 7
Chennai 6
Guayaquil 6
Haiphong 6
Montreal 6
Stockholm 6
Tashkent 6
Atlanta 5
Boston 5
Brasília 5
Curitiba 5
Manchester 5
Riyadh 5
Rome 5
San Francisco 5
Secaucus 5
Amman 4
Buenos Aires 4
Bến Tre 4
Changchun 4
Dhaka 4
Jeddah 4
Kathmandu 4
Lanzhou 4
Leawood 4
Medellín 4
Totale 8.983
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Nome #
0.13 um CMOS technologies for radiation hardness analog front-end circuits in LHC upgrades 2.568
Design hints for best noise and signal behaviour in DMILL amplifiers 147
CMOS technologies in the 100 nm range for rad-hard front-end electronics in future collider experiments. 126
An ionization chamber shower detector for the LHC luminosity monitor 126
130 and 90 nm CMOS technologies for detector front-end applications 125
2D and 3D thin pixel technologies for the Layer0 of the SuperB Silicon Vertex Tracker 124
A 4096-pixel MAPS device with on-chip data sparsification 124
An ionization chamber shower detector for the LHC luminosity monitor 121
A novel monolithic active pixel detector in 0.13 μm triple well CMOS technology with pixel level analog processing 119
Design and characterization of integrated front-end transistors in a microstrip detector technology 116
CMOS MAPS with pixel level sparsification and time stamping capabilities for applications at the ILC 116
Bulk damage in proton irradiated JFET transistors and charge preamplifiers on high resistivity silicon 113
The BABAR Detector 111
Experimental study and modeling of white noise sources in submicron P and N-MOSFETs 110
CMOS MAPS with fully integrated, hybrid-pixel-like analog front-end electronics 109
JFET-CMOS Microstrip Front-end 109
On the design of a JFET-CMOS front-end for low noise data acquisition from microstrip detectors 108
Deep n-well MAPS in a 130 nm CMOS technology: Beam test results 108
Beam-test results of 4k pixel CMOS MAPS and high resistivity striplet detectors equipped with digital sparsied readout in the Slim5 low mass silicon demonstrator 107
“Preamplifiers for Room Temperature and Cryogenic Applications Based on DMILL Technology” 105
The analog signal processing system for the Auger fluorescence detector prototype 104
Low-noise design criteria for detector readout systems in deep submicron CMOS technology 104
A new approach to the design of monolithic active pixel detectors in 0.13 um triple well CMOS technology 103
A fabrication process for silicon microstrip detectors with integrated front-end electronics 102
The analog signal processing system for the Auger fluorescence detector prototype 101
Development of a detector for bunch by bunch measurements and optimization of luminosity in the LHC 101
The analog signal processor of the auger fluorescence detector prototype 100
Noise performance of 0.13 μm CMOS technologies for detector front-end applications 100
A study for the detection of ionizing particles with phototransistors on thick high-resistivity silicon substrates 100
Deep submicron CMOS transistors for low-noise front-end systems 100
Effects induced by gamma-radiation on P and N-channel junction field effect transistors 99
Noise characterization of 130 nm and 90 nm CMOS technologies for analog front-end electronics 99
Impact of Lateral Isolation Oxides on Radiation-Induced Noise Degradation in CMOS Technologies in the 100-nm Regime 99
Integrated front-end electronics in a detector compatible process: source-follower and charge-sensitive preamplifier configuration 99
Radiation hardness study of proton irradiated SOI bipolar transistors 98
Proton induced damage in JFET transistors and charge preamplifiers on high-resistivity silicon 98
Fabrication of Microstrip Detectors and Integrated Electronics on High Resistivity Silicon 98
Noise limits of AToM, a 128 channel CMOS readout chip in applications with room temperature high granularity detectors 97
“Complementi al corso di Strumentazione e Misure Elettroniche “. 97
Evolution in the criteria that underlie the design of a monolithic preamplifier system for microstrip detectors 97
Noise degradation induced by γ-rays on P- and N-channel junction field-effect transistors 96
Instrumentation for noise measurements on CMOS transistors for fast detector preamplifiers 94
Noise behavior under gamma-irradiation of 0.35 um CMOS transistors 94
Noise Behavior of a 180 nm CMOS SOI Technology for Detector Front-End Electronics 94
A microstrip preamplifier system based on a low noise radiation hard innovative technology 94
Response of SOI bipolar transistors exposed to gamma-rays under different dose rate and bias conditions 94
Monolithic pixel detectors in a 0.13 um CMOS technology with sensor level continuous time charge amplification and shaping 93
Beam test results of different configurations of deep N-well MAPS matrices featuring in pixel full signal processing 93
Optimization of signal extraction and front-end design in a fast, multigap ionization chamber 93
Recent development on triple well 130 nm CMOS MAPS with in-pixel signal processing and data sparsification capability 92
Feasibility studies of microelectrode silicon detectors with integrated electronics 92
Radiation tolerance of a 0.18 um CMOS process 90
The associative memory for the self-triggered SLIM5 silicon telescope 89
Effects of gamma-rays on JFET devices and circuits fabricated in a detector-compatible process 89
Noise performances of 0.13 um CMOS technologies for detector front-end applications 88
The superB silicon vertex tracker 88
Thin pixel development for the SuperB silicon vertex tracker 88
Survey of noise performances and scaling effects in deep submicron CMOS devices from different foundries 87
Comparison of ionizing radiation effects in 0.18 and 0.25 um CMOS technologies for analog applications 86
JFET front-end circuits integrated in a detector-grade silicon substrate 86
Recent developments in 130 nm CMOS monolithic active pixel detectors 85
The readout of the LHC beam luminosity monitor: accurate shower energy measurements at a 40MHz repetition rate 85
The high rate data acquisition system for the SLIM5 beam test 85
Electrical Design Considerations for a 40 MHz Gas Ionization Chamber 84
Impact of gate-leakage current noise in sub-100 nm CMOS front-end electronics 84
The SuperB silicon vertex tracker 84
Radiation hardness perspectives for the design of analog detector readout circuits in the 0.18 um CMOS generation 84
Triple well CMOS active pixel sensor with in-pixel full signal analog processing 84
On some aspects of suboptimal filtering applied to f^0, f^1 and f^2 noise terms in charge measurements 83
Development of deep N-well MAPS in a 130 nm CMOS technology and beam test results on a 4k-pixel matrix with digital sparsified readout 83
Noise analysis of NPN SOI bipolar transistors for the design of charge measuring systems 82
JFET preamplifiers with different reset techniques on detector-grade high-resistivity silicon 82
Initial test results of an ionization chamber shower detector for a LHC luminosity monitor 82
On-chip fast data sparsication for a monolithic 4096-pixel device 82
“Extremely low noise amplifier for interfacing active devices to instruments for spectral analysis 82
Perspectives for low noise detector readout in a sub-quarter-micron CMOS SOI technology 82
The SLIM5 low mass silicon tracker demonstrator 81
Vertex detector for the SuperB Factory 81
Resolution limits achievable with CMOS front-end in X and gamma-ray analysis with semiconductor detectors 81
Non-standard approach to charge signal processing in CMOS MAPS for charged particle trackers 80
Submicron CMOS technologies for low-noise analog front-end circuits 80
Design criteria for low-noise front-end electronics in the 0.13 um CMOS generation 80
Development of a triple well CMOS MAPS device with in-pixel signal processing and sparsified readout capabilities 80
Deep N-well CMOS MAPS with in-pixel signal processing and sparsification capabilities for the ILC vertex detector 80
Optimization of signal extraction and front-end design in a fast, multigap ionization chamber 79
MAPS in 130 nm triple well CMOS technology for HEP applications 79
Total Ionizing Dose Effects on the Noise Performances of a 0.13 um CMOS Technology 79
Proton induced damage in JFET transistors and charge preamplifiers on high-resistivity silicon 78
Gamma-ray response of SOI bipolar junction transistors for fast, radiation tolerant front-end electronics 78
Response of SOI bipolar transistors exposed to gamma-rays under different dose-rate and bias conditions 78
Pixel-level continuous-time analog signal processing for 130 nm CMOS MAPS 78
“Low Noise, High Radiation Hardness Front-End Circuits Based Upon an Upgraded JFET Monolithic Process”. 76
Design and performance of analog circuits for DNW-MAPS in 100-nm-scale CMOS technology 76
Monolithic JFET preamplifier with nonresistive charge reset 75
Proposal of a sparsification circuit for mixed-mode MAPS detectors 73
Recent results from the development of silicon detectors with integrated electronics 73
Development of 130 nm CMOS monolithic active pixels with in-pixel signal processing 71
Minimum noise design of charge amplifiers with CMOS processes in the 100 nm feature size range 71
Ionizing radiation effects on JFET devices and circuits fabricated in a detector-compatible process 69
Fermilab silicon strip readout chip for BTeV 69
Totale 11.786
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Categoria #
all - tutte 47.904
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 47.904
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022545 0 4 20 16 23 34 10 18 39 48 76 257
2022/20231.614 176 87 6 135 203 188 0 85 672 6 38 18
2023/2024495 53 148 14 28 62 107 4 25 3 22 11 18
2024/20251.227 21 129 32 77 13 9 56 113 274 31 132 340
2025/20265.084 220 887 1.865 253 290 152 555 171 225 199 121 146
2026/2027216 68 148 0 0 0 0 0 0 0 0 0 0
Totale 12.706