IRIS
SPEZIALI, VALERIA
 Distribuzione geografica
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Continente #
NA - Nord America 6.013
AS - Asia 2.956
EU - Europa 2.654
SA - Sud America 326
AF - Africa 61
OC - Oceania 7
Continente sconosciuto - Info sul continente non disponibili 5
Totale 12.022
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Nazione #
US - Stati Uniti d'America 5.952
CN - Cina 1.632
SG - Singapore 643
IE - Irlanda 559
UA - Ucraina 499
FI - Finlandia 308
DE - Germania 277
HK - Hong Kong 275
SE - Svezia 272
BR - Brasile 244
RU - Federazione Russa 212
VN - Vietnam 179
FR - Francia 159
GB - Regno Unito 150
IT - Italia 132
IN - India 43
CA - Canada 36
BD - Bangladesh 32
AR - Argentina 29
IQ - Iraq 29
ZA - Sudafrica 24
BE - Belgio 19
EC - Ecuador 18
AT - Austria 16
MX - Messico 13
NL - Olanda 13
TR - Turchia 12
SA - Arabia Saudita 11
ES - Italia 10
JP - Giappone 10
MY - Malesia 10
VE - Venezuela 10
PH - Filippine 9
NP - Nepal 8
PK - Pakistan 8
PL - Polonia 8
ID - Indonesia 7
CO - Colombia 6
DZ - Algeria 6
UZ - Uzbekistan 6
AE - Emirati Arabi Uniti 5
CL - Cile 5
DO - Repubblica Dominicana 5
JO - Giordania 5
KE - Kenya 5
LB - Libano 5
MU - Mauritius 5
OM - Oman 5
TN - Tunisia 5
LT - Lituania 4
PY - Paraguay 4
UY - Uruguay 4
AU - Australia 3
CH - Svizzera 3
CZ - Repubblica Ceca 3
ET - Etiopia 3
EU - Europa 3
IR - Iran 3
MA - Marocco 3
NI - Nicaragua 3
RO - Romania 3
AZ - Azerbaigian 2
BH - Bahrain 2
BN - Brunei Darussalam 2
BO - Bolivia 2
CR - Costa Rica 2
EG - Egitto 2
GY - Guiana 2
IL - Israele 2
KZ - Kazakistan 2
NZ - Nuova Zelanda 2
PE - Perù 2
TH - Thailandia 2
AL - Albania 1
AM - Armenia 1
BA - Bosnia-Erzegovina 1
BG - Bulgaria 1
CI - Costa d'Avorio 1
CM - Camerun 1
CW - ???statistics.table.value.countryCode.CW??? 1
GA - Gabon 1
GE - Georgia 1
GM - Gambi 1
GN - Guinea 1
GT - Guatemala 1
HR - Croazia 1
JM - Giamaica 1
KG - Kirghizistan 1
KR - Corea 1
KW - Kuwait 1
LA - Repubblica Popolare Democratica del Laos 1
MZ - Mozambico 1
NA - Namibia 1
NC - Nuova Caledonia 1
NG - Nigeria 1
PS - Palestinian Territory 1
PT - Portogallo 1
RS - Serbia 1
SK - Slovacchia (Repubblica Slovacca) 1
TO - Tonga 1
Totale 12.021
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Città #
Dallas 2.469
Dublin 559
Chandler 552
Jacksonville 531
Nanjing 428
San Jose 368
Singapore 311
Hong Kong 266
Ashburn 244
Boardman 200
Nanchang 155
Beijing 151
Princeton 118
Shenyang 117
Lawrence 115
Wilmington 112
Medford 110
Hebei 106
Changsha 102
Jiaxing 97
Lauterbourg 95
Ann Arbor 82
Hangzhou 81
Los Angeles 81
Tianjin 76
Ho Chi Minh City 70
Helsinki 66
Buffalo 64
Milan 59
Hanoi 45
Moscow 40
Woodbridge 39
Shanghai 35
Verona 31
New York 25
Toronto 23
Chicago 22
São Paulo 21
Des Moines 20
Norwalk 18
Redondo Beach 18
Brussels 17
Munich 17
Johannesburg 15
Baghdad 14
Guangzhou 14
Jinan 14
Nuremberg 14
Auburn Hills 13
Fairfield 12
Frankfurt am Main 12
Ningbo 12
Turku 12
Zhengzhou 12
Brooklyn 11
Santa Clara 11
Seattle 11
London 10
Tokyo 10
Kunming 9
Orem 9
Pavia 8
Rio de Janeiro 8
Taizhou 8
Vienna 8
Warsaw 8
West Jordan 8
Augusta 7
Da Nang 7
Fuzhou 7
Meda 7
Phoenix 7
Quito 7
Chennai 6
Guayaquil 6
Haiphong 6
Houston 6
Montreal 6
Stockholm 6
Tashkent 6
Boston 5
Curitiba 5
Manchester 5
Riyadh 5
Secaucus 5
Amman 4
Atlanta 4
Brasília 4
Buenos Aires 4
Bến Tre 4
Changchun 4
Dhaka 4
Jeddah 4
Kathmandu 4
Lanzhou 4
Leawood 4
Montevideo 4
Mosul 4
Nairobi 4
Paris 4
Totale 8.588
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Nome #
0.13 um CMOS technologies for radiation hardness analog front-end circuits in LHC upgrades 2.559
Design hints for best noise and signal behaviour in DMILL amplifiers 140
130 and 90 nm CMOS technologies for detector front-end applications 120
2D and 3D thin pixel technologies for the Layer0 of the SuperB Silicon Vertex Tracker 119
A 4096-pixel MAPS device with on-chip data sparsification 119
CMOS technologies in the 100 nm range for rad-hard front-end electronics in future collider experiments. 116
An ionization chamber shower detector for the LHC luminosity monitor 116
Design and characterization of integrated front-end transistors in a microstrip detector technology 113
An ionization chamber shower detector for the LHC luminosity monitor 113
CMOS MAPS with pixel level sparsification and time stamping capabilities for applications at the ILC 111
A novel monolithic active pixel detector in 0.13 μm triple well CMOS technology with pixel level analog processing 110
Bulk damage in proton irradiated JFET transistors and charge preamplifiers on high resistivity silicon 106
The BABAR Detector 104
JFET-CMOS Microstrip Front-end 104
Experimental study and modeling of white noise sources in submicron P and N-MOSFETs 103
CMOS MAPS with fully integrated, hybrid-pixel-like analog front-end electronics 102
Beam-test results of 4k pixel CMOS MAPS and high resistivity striplet detectors equipped with digital sparsied readout in the Slim5 low mass silicon demonstrator 102
On the design of a JFET-CMOS front-end for low noise data acquisition from microstrip detectors 101
Deep n-well MAPS in a 130 nm CMOS technology: Beam test results 101
The analog signal processing system for the Auger fluorescence detector prototype 101
Low-noise design criteria for detector readout systems in deep submicron CMOS technology 101
The analog signal processing system for the Auger fluorescence detector prototype 99
A new approach to the design of monolithic active pixel detectors in 0.13 um triple well CMOS technology 98
“Preamplifiers for Room Temperature and Cryogenic Applications Based on DMILL Technology” 98
A fabrication process for silicon microstrip detectors with integrated front-end electronics 97
Integrated front-end electronics in a detector compatible process: source-follower and charge-sensitive preamplifier configuration 96
The analog signal processor of the auger fluorescence detector prototype 95
Noise performance of 0.13 μm CMOS technologies for detector front-end applications 95
Fabrication of Microstrip Detectors and Integrated Electronics on High Resistivity Silicon 95
Effects induced by gamma-radiation on P and N-channel junction field effect transistors 94
“Complementi al corso di Strumentazione e Misure Elettroniche “. 94
Deep submicron CMOS transistors for low-noise front-end systems 93
Noise limits of AToM, a 128 channel CMOS readout chip in applications with room temperature high granularity detectors 92
Radiation hardness study of proton irradiated SOI bipolar transistors 92
Impact of Lateral Isolation Oxides on Radiation-Induced Noise Degradation in CMOS Technologies in the 100-nm Regime 92
A study for the detection of ionizing particles with phototransistors on thick high-resistivity silicon substrates 92
Response of SOI bipolar transistors exposed to gamma-rays under different dose rate and bias conditions 92
Development of a detector for bunch by bunch measurements and optimization of luminosity in the LHC 92
Noise characterization of 130 nm and 90 nm CMOS technologies for analog front-end electronics 91
Noise degradation induced by γ-rays on P- and N-channel junction field-effect transistors 91
Optimization of signal extraction and front-end design in a fast, multigap ionization chamber 91
Proton induced damage in JFET transistors and charge preamplifiers on high-resistivity silicon 90
Noise Behavior of a 180 nm CMOS SOI Technology for Detector Front-End Electronics 90
Evolution in the criteria that underlie the design of a monolithic preamplifier system for microstrip detectors 90
Instrumentation for noise measurements on CMOS transistors for fast detector preamplifiers 89
A microstrip preamplifier system based on a low noise radiation hard innovative technology 89
Monolithic pixel detectors in a 0.13 um CMOS technology with sensor level continuous time charge amplification and shaping 88
Beam test results of different configurations of deep N-well MAPS matrices featuring in pixel full signal processing 87
Noise behavior under gamma-irradiation of 0.35 um CMOS transistors 87
Recent development on triple well 130 nm CMOS MAPS with in-pixel signal processing and data sparsification capability 86
Feasibility studies of microelectrode silicon detectors with integrated electronics 86
The associative memory for the self-triggered SLIM5 silicon telescope 85
The superB silicon vertex tracker 85
Thin pixel development for the SuperB silicon vertex tracker 85
Noise performances of 0.13 um CMOS technologies for detector front-end applications 84
Radiation tolerance of a 0.18 um CMOS process 84
The high rate data acquisition system for the SLIM5 beam test 83
Effects of gamma-rays on JFET devices and circuits fabricated in a detector-compatible process 83
Comparison of ionizing radiation effects in 0.18 and 0.25 um CMOS technologies for analog applications 82
Survey of noise performances and scaling effects in deep submicron CMOS devices from different foundries 82
JFET front-end circuits integrated in a detector-grade silicon substrate 82
Recent developments in 130 nm CMOS monolithic active pixel detectors 81
The readout of the LHC beam luminosity monitor: accurate shower energy measurements at a 40MHz repetition rate 81
Triple well CMOS active pixel sensor with in-pixel full signal analog processing 81
Electrical Design Considerations for a 40 MHz Gas Ionization Chamber 80
JFET preamplifiers with different reset techniques on detector-grade high-resistivity silicon 80
On-chip fast data sparsication for a monolithic 4096-pixel device 80
“Extremely low noise amplifier for interfacing active devices to instruments for spectral analysis 80
Impact of gate-leakage current noise in sub-100 nm CMOS front-end electronics 79
Development of a triple well CMOS MAPS device with in-pixel signal processing and sparsified readout capabilities 79
The SLIM5 low mass silicon tracker demonstrator 79
Development of deep N-well MAPS in a 130 nm CMOS technology and beam test results on a 4k-pixel matrix with digital sparsified readout 79
Radiation hardness perspectives for the design of analog detector readout circuits in the 0.18 um CMOS generation 79
MAPS in 130 nm triple well CMOS technology for HEP applications 78
On some aspects of suboptimal filtering applied to f^0, f^1 and f^2 noise terms in charge measurements 78
Noise analysis of NPN SOI bipolar transistors for the design of charge measuring systems 77
Vertex detector for the SuperB Factory 77
Resolution limits achievable with CMOS front-end in X and gamma-ray analysis with semiconductor detectors 77
Perspectives for low noise detector readout in a sub-quarter-micron CMOS SOI technology 77
Optimization of signal extraction and front-end design in a fast, multigap ionization chamber 76
Design criteria for low-noise front-end electronics in the 0.13 um CMOS generation 76
Deep N-well CMOS MAPS with in-pixel signal processing and sparsification capabilities for the ILC vertex detector 76
Total Ionizing Dose Effects on the Noise Performances of a 0.13 um CMOS Technology 75
Initial test results of an ionization chamber shower detector for a LHC luminosity monitor 75
The SuperB silicon vertex tracker 75
Proton induced damage in JFET transistors and charge preamplifiers on high-resistivity silicon 75
Gamma-ray response of SOI bipolar junction transistors for fast, radiation tolerant front-end electronics 75
Submicron CMOS technologies for low-noise analog front-end circuits 73
“Low Noise, High Radiation Hardness Front-End Circuits Based Upon an Upgraded JFET Monolithic Process”. 73
Response of SOI bipolar transistors exposed to gamma-rays under different dose-rate and bias conditions 73
Pixel-level continuous-time analog signal processing for 130 nm CMOS MAPS 73
Non-standard approach to charge signal processing in CMOS MAPS for charged particle trackers 72
Design and performance of analog circuits for DNW-MAPS in 100-nm-scale CMOS technology 71
Proposal of a sparsification circuit for mixed-mode MAPS detectors 70
Recent results from the development of silicon detectors with integrated electronics 70
Development of 130 nm CMOS monolithic active pixels with in-pixel signal processing 68
Monolithic JFET preamplifier with nonresistive charge reset 68
Development of deep N-well monolithic active pixel sensors in a 0.13 um CMOS technology 68
Minimum noise design of charge amplifiers with CMOS processes in the 100 nm feature size range 68
Fermilab silicon strip readout chip for BTeV 67
Totale 11.296
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Categoria #
all - tutte 43.041
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 43.041
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021273 0 0 0 0 0 0 0 0 0 132 111 30
2021/2022547 2 4 20 16 23 34 10 18 39 48 76 257
2022/20231.614 176 87 6 135 203 188 0 85 672 6 38 18
2023/2024495 53 148 14 28 62 107 4 25 3 22 11 18
2024/20251.227 21 129 32 77 13 9 56 113 274 31 132 340
2025/20264.769 220 887 1.865 253 290 152 555 171 225 151 0 0
Totale 12.175