SPEZIALI, VALERIA
 Distribuzione geografica
Continente #
NA - Nord America 6.290
AS - Asia 2.964
EU - Europa 2.664
SA - Sud America 330
AF - Africa 61
OC - Oceania 7
Continente sconosciuto - Info sul continente non disponibili 5
Totale 12.321
Nazione #
US - Stati Uniti d'America 6.225
CN - Cina 1.634
SG - Singapore 647
IE - Irlanda 559
UA - Ucraina 499
FI - Finlandia 308
DE - Germania 278
HK - Hong Kong 275
SE - Svezia 272
BR - Brasile 245
RU - Federazione Russa 212
VN - Vietnam 179
FR - Francia 159
GB - Regno Unito 152
IT - Italia 138
IN - India 43
CA - Canada 37
BD - Bangladesh 33
AR - Argentina 30
IQ - Iraq 29
ZA - Sudafrica 24
BE - Belgio 19
EC - Ecuador 18
AT - Austria 16
MX - Messico 15
NL - Olanda 13
TR - Turchia 12
JP - Giappone 11
SA - Arabia Saudita 11
ES - Italia 10
MY - Malesia 10
VE - Venezuela 10
PH - Filippine 9
PL - Polonia 9
NP - Nepal 8
PK - Pakistan 8
CL - Cile 7
ID - Indonesia 7
CO - Colombia 6
DZ - Algeria 6
UZ - Uzbekistan 6
AE - Emirati Arabi Uniti 5
DO - Repubblica Dominicana 5
JO - Giordania 5
KE - Kenya 5
LB - Libano 5
MU - Mauritius 5
OM - Oman 5
TN - Tunisia 5
LT - Lituania 4
PY - Paraguay 4
UY - Uruguay 4
AU - Australia 3
CH - Svizzera 3
CR - Costa Rica 3
CZ - Repubblica Ceca 3
ET - Etiopia 3
EU - Europa 3
IR - Iran 3
MA - Marocco 3
NI - Nicaragua 3
RO - Romania 3
AZ - Azerbaigian 2
BH - Bahrain 2
BN - Brunei Darussalam 2
BO - Bolivia 2
EG - Egitto 2
GY - Guiana 2
IL - Israele 2
KZ - Kazakistan 2
NZ - Nuova Zelanda 2
PE - Perù 2
TH - Thailandia 2
AL - Albania 1
AM - Armenia 1
BA - Bosnia-Erzegovina 1
BG - Bulgaria 1
CI - Costa d'Avorio 1
CM - Camerun 1
CW - ???statistics.table.value.countryCode.CW??? 1
GA - Gabon 1
GE - Georgia 1
GM - Gambi 1
GN - Guinea 1
GT - Guatemala 1
HR - Croazia 1
JM - Giamaica 1
KG - Kirghizistan 1
KR - Corea 1
KW - Kuwait 1
LA - Repubblica Popolare Democratica del Laos 1
MZ - Mozambico 1
NA - Namibia 1
NC - Nuova Caledonia 1
NG - Nigeria 1
PS - Palestinian Territory 1
PT - Portogallo 1
RS - Serbia 1
SK - Slovacchia (Repubblica Slovacca) 1
TO - Tonga 1
Totale 12.320
Città #
Dallas 2.472
Dublin 559
Chandler 552
Jacksonville 531
San Jose 522
Nanjing 428
Singapore 311
Hong Kong 266
Ashburn 258
Boardman 226
Nanchang 155
Beijing 152
Princeton 118
Shenyang 117
Lawrence 115
Wilmington 112
Medford 110
Hebei 106
Changsha 102
Jiaxing 97
Lauterbourg 95
Los Angeles 84
Ann Arbor 82
Hangzhou 81
Tianjin 76
Ho Chi Minh City 70
Helsinki 66
Buffalo 64
Milan 59
Hanoi 45
Moscow 40
Woodbridge 39
Shanghai 36
Council Bluffs 32
New York 32
Verona 31
Toronto 24
Chicago 22
São Paulo 21
Des Moines 20
Munich 18
Norwalk 18
Redondo Beach 18
Brussels 17
Johannesburg 15
Baghdad 14
Guangzhou 14
Jinan 14
Nuremberg 14
Auburn Hills 13
Santa Clara 13
Brooklyn 12
Fairfield 12
Frankfurt am Main 12
Ningbo 12
Orem 12
Turku 12
Zhengzhou 12
London 11
Seattle 11
Tokyo 10
Kunming 9
Warsaw 9
Pavia 8
Phoenix 8
Rio de Janeiro 8
Taizhou 8
Vienna 8
West Jordan 8
Augusta 7
Da Nang 7
Fuzhou 7
Houston 7
Meda 7
Quito 7
Chennai 6
Guayaquil 6
Haiphong 6
Montreal 6
Stockholm 6
Tashkent 6
Atlanta 5
Boston 5
Curitiba 5
Manchester 5
Riyadh 5
Rome 5
San Francisco 5
Secaucus 5
Amman 4
Brasília 4
Buenos Aires 4
Bến Tre 4
Changchun 4
Dhaka 4
Jeddah 4
Kathmandu 4
Lanzhou 4
Leawood 4
Montevideo 4
Totale 8.840
Nome #
0.13 um CMOS technologies for radiation hardness analog front-end circuits in LHC upgrades 2.562
Design hints for best noise and signal behaviour in DMILL amplifiers 145
CMOS technologies in the 100 nm range for rad-hard front-end electronics in future collider experiments. 122
130 and 90 nm CMOS technologies for detector front-end applications 122
2D and 3D thin pixel technologies for the Layer0 of the SuperB Silicon Vertex Tracker 122
A 4096-pixel MAPS device with on-chip data sparsification 122
An ionization chamber shower detector for the LHC luminosity monitor 121
A novel monolithic active pixel detector in 0.13 μm triple well CMOS technology with pixel level analog processing 117
An ionization chamber shower detector for the LHC luminosity monitor 116
Design and characterization of integrated front-end transistors in a microstrip detector technology 114
CMOS MAPS with pixel level sparsification and time stamping capabilities for applications at the ILC 114
Bulk damage in proton irradiated JFET transistors and charge preamplifiers on high resistivity silicon 110
Experimental study and modeling of white noise sources in submicron P and N-MOSFETs 109
The BABAR Detector 109
CMOS MAPS with fully integrated, hybrid-pixel-like analog front-end electronics 107
JFET-CMOS Microstrip Front-end 107
On the design of a JFET-CMOS front-end for low noise data acquisition from microstrip detectors 106
Beam-test results of 4k pixel CMOS MAPS and high resistivity striplet detectors equipped with digital sparsied readout in the Slim5 low mass silicon demonstrator 106
Deep n-well MAPS in a 130 nm CMOS technology: Beam test results 105
The analog signal processing system for the Auger fluorescence detector prototype 103
Low-noise design criteria for detector readout systems in deep submicron CMOS technology 103
A new approach to the design of monolithic active pixel detectors in 0.13 um triple well CMOS technology 102
“Preamplifiers for Room Temperature and Cryogenic Applications Based on DMILL Technology” 102
The analog signal processing system for the Auger fluorescence detector prototype 100
A fabrication process for silicon microstrip detectors with integrated front-end electronics 99
Effects induced by gamma-radiation on P and N-channel junction field effect transistors 98
The analog signal processor of the auger fluorescence detector prototype 98
Noise performance of 0.13 μm CMOS technologies for detector front-end applications 98
Noise characterization of 130 nm and 90 nm CMOS technologies for analog front-end electronics 97
A study for the detection of ionizing particles with phototransistors on thick high-resistivity silicon substrates 97
Deep submicron CMOS transistors for low-noise front-end systems 97
Fabrication of Microstrip Detectors and Integrated Electronics on High Resistivity Silicon 97
Integrated front-end electronics in a detector compatible process: source-follower and charge-sensitive preamplifier configuration 97
Development of a detector for bunch by bunch measurements and optimization of luminosity in the LHC 97
Radiation hardness study of proton irradiated SOI bipolar transistors 96
Impact of Lateral Isolation Oxides on Radiation-Induced Noise Degradation in CMOS Technologies in the 100-nm Regime 96
“Complementi al corso di Strumentazione e Misure Elettroniche “. 96
Evolution in the criteria that underlie the design of a monolithic preamplifier system for microstrip detectors 96
Noise limits of AToM, a 128 channel CMOS readout chip in applications with room temperature high granularity detectors 94
Noise degradation induced by γ-rays on P- and N-channel junction field-effect transistors 94
Proton induced damage in JFET transistors and charge preamplifiers on high-resistivity silicon 94
Response of SOI bipolar transistors exposed to gamma-rays under different dose rate and bias conditions 94
Instrumentation for noise measurements on CMOS transistors for fast detector preamplifiers 92
Noise Behavior of a 180 nm CMOS SOI Technology for Detector Front-End Electronics 92
Optimization of signal extraction and front-end design in a fast, multigap ionization chamber 92
Monolithic pixel detectors in a 0.13 um CMOS technology with sensor level continuous time charge amplification and shaping 91
Noise behavior under gamma-irradiation of 0.35 um CMOS transistors 91
Recent development on triple well 130 nm CMOS MAPS with in-pixel signal processing and data sparsification capability 91
Feasibility studies of microelectrode silicon detectors with integrated electronics 91
A microstrip preamplifier system based on a low noise radiation hard innovative technology 91
Beam test results of different configurations of deep N-well MAPS matrices featuring in pixel full signal processing 90
Radiation tolerance of a 0.18 um CMOS process 87
The associative memory for the self-triggered SLIM5 silicon telescope 87
The superB silicon vertex tracker 87
Noise performances of 0.13 um CMOS technologies for detector front-end applications 86
Effects of gamma-rays on JFET devices and circuits fabricated in a detector-compatible process 86
Thin pixel development for the SuperB silicon vertex tracker 85
Comparison of ionizing radiation effects in 0.18 and 0.25 um CMOS technologies for analog applications 85
Survey of noise performances and scaling effects in deep submicron CMOS devices from different foundries 85
JFET front-end circuits integrated in a detector-grade silicon substrate 85
Electrical Design Considerations for a 40 MHz Gas Ionization Chamber 83
Recent developments in 130 nm CMOS monolithic active pixel detectors 83
The readout of the LHC beam luminosity monitor: accurate shower energy measurements at a 40MHz repetition rate 83
The high rate data acquisition system for the SLIM5 beam test 83
Triple well CMOS active pixel sensor with in-pixel full signal analog processing 83
JFET preamplifiers with different reset techniques on detector-grade high-resistivity silicon 81
Initial test results of an ionization chamber shower detector for a LHC luminosity monitor 81
On-chip fast data sparsication for a monolithic 4096-pixel device 81
The SuperB silicon vertex tracker 81
Impact of gate-leakage current noise in sub-100 nm CMOS front-end electronics 80
On some aspects of suboptimal filtering applied to f^0, f^1 and f^2 noise terms in charge measurements 80
Noise analysis of NPN SOI bipolar transistors for the design of charge measuring systems 80
Development of a triple well CMOS MAPS device with in-pixel signal processing and sparsified readout capabilities 80
“Extremely low noise amplifier for interfacing active devices to instruments for spectral analysis 80
The SLIM5 low mass silicon tracker demonstrator 80
Vertex detector for the SuperB Factory 80
Radiation hardness perspectives for the design of analog detector readout circuits in the 0.18 um CMOS generation 80
Design criteria for low-noise front-end electronics in the 0.13 um CMOS generation 79
Development of deep N-well MAPS in a 130 nm CMOS technology and beam test results on a 4k-pixel matrix with digital sparsified readout 79
Perspectives for low noise detector readout in a sub-quarter-micron CMOS SOI technology 79
Optimization of signal extraction and front-end design in a fast, multigap ionization chamber 78
MAPS in 130 nm triple well CMOS technology for HEP applications 78
Total Ionizing Dose Effects on the Noise Performances of a 0.13 um CMOS Technology 78
Submicron CMOS technologies for low-noise analog front-end circuits 78
Resolution limits achievable with CMOS front-end in X and gamma-ray analysis with semiconductor detectors 78
Deep N-well CMOS MAPS with in-pixel signal processing and sparsification capabilities for the ILC vertex detector 78
Non-standard approach to charge signal processing in CMOS MAPS for charged particle trackers 77
Gamma-ray response of SOI bipolar junction transistors for fast, radiation tolerant front-end electronics 76
Response of SOI bipolar transistors exposed to gamma-rays under different dose-rate and bias conditions 76
Proton induced damage in JFET transistors and charge preamplifiers on high-resistivity silicon 75
Pixel-level continuous-time analog signal processing for 130 nm CMOS MAPS 75
“Low Noise, High Radiation Hardness Front-End Circuits Based Upon an Upgraded JFET Monolithic Process”. 74
Design and performance of analog circuits for DNW-MAPS in 100-nm-scale CMOS technology 73
Monolithic JFET preamplifier with nonresistive charge reset 72
Proposal of a sparsification circuit for mixed-mode MAPS detectors 72
Recent results from the development of silicon detectors with integrated electronics 72
Development of 130 nm CMOS monolithic active pixels with in-pixel signal processing 70
Fermilab silicon strip readout chip for BTeV 69
Minimum noise design of charge amplifiers with CMOS processes in the 100 nm feature size range 69
Development of deep N-well monolithic active pixel sensors in a 0.13 um CMOS technology 68
Totale 11.577
Categoria #
all - tutte 46.125
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 46.125


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202130 0 0 0 0 0 0 0 0 0 0 0 30
2021/2022547 2 4 20 16 23 34 10 18 39 48 76 257
2022/20231.614 176 87 6 135 203 188 0 85 672 6 38 18
2023/2024495 53 148 14 28 62 107 4 25 3 22 11 18
2024/20251.227 21 129 32 77 13 9 56 113 274 31 132 340
2025/20265.068 220 887 1.865 253 290 152 555 171 225 199 121 130
Totale 12.474