IRIS
SPEZIALI, VALERIA
 Distribuzione geografica
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Continente #
NA - Nord America 5.514
AS - Asia 2.517
EU - Europa 2.492
SA - Sud America 251
AF - Africa 31
Continente sconosciuto - Info sul continente non disponibili 5
OC - Oceania 5
Totale 10.815
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Nazione #
US - Stati Uniti d'America 5.468
CN - Cina 1.589
IE - Irlanda 559
SG - Singapore 526
UA - Ucraina 497
FI - Finlandia 308
SE - Svezia 271
DE - Germania 260
HK - Hong Kong 249
RU - Federazione Russa 208
BR - Brasile 203
GB - Regno Unito 140
IT - Italia 123
FR - Francia 60
VN - Vietnam 42
CA - Canada 34
IN - India 21
BE - Belgio 19
AR - Argentina 17
IQ - Iraq 17
BD - Bangladesh 16
ZA - Sudafrica 13
EC - Ecuador 11
NL - Olanda 10
AT - Austria 9
MX - Messico 7
ES - Italia 6
SA - Arabia Saudita 6
ID - Indonesia 5
MU - Mauritius 5
PL - Polonia 5
TR - Turchia 5
AE - Emirati Arabi Uniti 4
CO - Colombia 4
JO - Giordania 4
JP - Giappone 4
LT - Lituania 4
NP - Nepal 4
VE - Venezuela 4
CH - Svizzera 3
CZ - Repubblica Ceca 3
DO - Repubblica Dominicana 3
DZ - Algeria 3
EU - Europa 3
IR - Iran 3
OM - Oman 3
PY - Paraguay 3
RO - Romania 3
UY - Uruguay 3
CL - Cile 2
GY - Guiana 2
IL - Israele 2
KZ - Kazakistan 2
LB - Libano 2
MA - Marocco 2
MY - Malesia 2
NZ - Nuova Zelanda 2
PK - Pakistan 2
TN - Tunisia 2
UZ - Uzbekistan 2
AM - Armenia 1
AU - Australia 1
AZ - Azerbaigian 1
BA - Bosnia-Erzegovina 1
BG - Bulgaria 1
BO - Bolivia 1
CW - ???statistics.table.value.countryCode.CW??? 1
ET - Etiopia 1
GA - Gabon 1
GM - Gambi 1
HR - Croazia 1
JM - Giamaica 1
KE - Kenya 1
KG - Kirghizistan 1
KR - Corea 1
KW - Kuwait 1
LA - Repubblica Popolare Democratica del Laos 1
MZ - Mozambico 1
NA - Namibia 1
NC - Nuova Caledonia 1
NI - Nicaragua 1
PE - Perù 1
PH - Filippine 1
PT - Portogallo 1
TO - Tonga 1
XK - ???statistics.table.value.countryCode.XK??? 1
Totale 10.815
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Città #
Dallas 2.469
Dublin 559
Chandler 552
Jacksonville 531
Nanjing 428
Hong Kong 245
Singapore 217
Boardman 200
Ashburn 176
Nanchang 155
Beijing 151
Princeton 118
Shenyang 117
Lawrence 115
Wilmington 112
Medford 110
Hebei 106
Changsha 102
Jiaxing 97
Ann Arbor 82
Hangzhou 81
Tianjin 76
Los Angeles 75
Helsinki 66
Buffalo 63
Milan 57
Moscow 40
Woodbridge 39
Shanghai 32
Verona 31
Toronto 23
São Paulo 20
Chicago 19
Des Moines 19
New York 19
Norwalk 18
Redondo Beach 18
Brussels 17
Munich 17
Ho Chi Minh City 16
Guangzhou 14
Jinan 14
Auburn Hills 13
Fairfield 12
Ningbo 12
Turku 12
Brooklyn 11
Seattle 11
Zhengzhou 11
Santa Clara 10
Hanoi 9
Kunming 9
London 9
Nuremberg 9
Baghdad 8
Johannesburg 8
Pavia 8
Taizhou 8
West Jordan 8
Augusta 7
Fuzhou 7
Meda 7
Phoenix 7
Houston 6
Boston 5
Guayaquil 5
Rio de Janeiro 5
San Jose 5
Secaucus 5
Stockholm 5
Warsaw 5
Atlanta 4
Changchun 4
Curitiba 4
Dhaka 4
Lanzhou 4
Leawood 4
Montreal 4
Pune 4
Quito 4
Riyadh 4
Tokyo 4
Vienna 4
Amman 3
Belo Horizonte 3
Brasília 3
Buenos Aires 3
Campo Grande 3
Canoas 3
Charlotte 3
Falkenstein 3
Goiânia 3
Haikou 3
Las Vegas 3
Manchester 3
Montevideo 3
Mosul 3
Porto Alegre 3
Ribeirão das Neves 3
Salvador 3
Totale 7.752
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Nome #
0.13 um CMOS technologies for radiation hardness analog front-end circuits in LHC upgrades 2.532
Design hints for best noise and signal behaviour in DMILL amplifiers 126
130 and 90 nm CMOS technologies for detector front-end applications 106
2D and 3D thin pixel technologies for the Layer0 of the SuperB Silicon Vertex Tracker 106
CMOS technologies in the 100 nm range for rad-hard front-end electronics in future collider experiments. 103
A 4096-pixel MAPS device with on-chip data sparsification 102
Design and characterization of integrated front-end transistors in a microstrip detector technology 101
The BABAR Detector 100
CMOS MAPS with pixel level sparsification and time stamping capabilities for applications at the ILC 96
Beam-test results of 4k pixel CMOS MAPS and high resistivity striplet detectors equipped with digital sparsied readout in the Slim5 low mass silicon demonstrator 94
Experimental study and modeling of white noise sources in submicron P and N-MOSFETs 93
An ionization chamber shower detector for the LHC luminosity monitor 93
Bulk damage in proton irradiated JFET transistors and charge preamplifiers on high resistivity silicon 92
On the design of a JFET-CMOS front-end for low noise data acquisition from microstrip detectors 90
Effects induced by gamma-radiation on P and N-channel junction field effect transistors 89
A novel monolithic active pixel detector in 0.13 μm triple well CMOS technology with pixel level analog processing 89
Deep n-well MAPS in a 130 nm CMOS technology: Beam test results 89
The analog signal processing system for the Auger fluorescence detector prototype 89
An ionization chamber shower detector for the LHC luminosity monitor 88
Low-noise design criteria for detector readout systems in deep submicron CMOS technology 88
CMOS MAPS with fully integrated, hybrid-pixel-like analog front-end electronics 87
Impact of Lateral Isolation Oxides on Radiation-Induced Noise Degradation in CMOS Technologies in the 100-nm Regime 87
“Complementi al corso di Strumentazione e Misure Elettroniche “. 87
JFET-CMOS Microstrip Front-end 86
Noise performance of 0.13 μm CMOS technologies for detector front-end applications 86
The analog signal processing system for the Auger fluorescence detector prototype 86
Noise limits of AToM, a 128 channel CMOS readout chip in applications with room temperature high granularity detectors 85
A fabrication process for silicon microstrip detectors with integrated front-end electronics 85
Proton induced damage in JFET transistors and charge preamplifiers on high-resistivity silicon 85
Noise Behavior of a 180 nm CMOS SOI Technology for Detector Front-End Electronics 85
The analog signal processor of the auger fluorescence detector prototype 84
Deep submicron CMOS transistors for low-noise front-end systems 84
“Preamplifiers for Room Temperature and Cryogenic Applications Based on DMILL Technology” 84
A new approach to the design of monolithic active pixel detectors in 0.13 um triple well CMOS technology 83
Fabrication of Microstrip Detectors and Integrated Electronics on High Resistivity Silicon 83
Evolution in the criteria that underlie the design of a monolithic preamplifier system for microstrip detectors 83
Development of a detector for bunch by bunch measurements and optimization of luminosity in the LHC 83
Instrumentation for noise measurements on CMOS transistors for fast detector preamplifiers 82
Response of SOI bipolar transistors exposed to gamma-rays under different dose rate and bias conditions 82
Radiation tolerance of a 0.18 um CMOS process 80
A study for the detection of ionizing particles with phototransistors on thick high-resistivity silicon substrates 80
The superB silicon vertex tracker 80
Integrated front-end electronics in a detector compatible process: source-follower and charge-sensitive preamplifier configuration 80
Noise characterization of 130 nm and 90 nm CMOS technologies for analog front-end electronics 79
Noise degradation induced by γ-rays on P- and N-channel junction field-effect transistors 79
Radiation hardness study of proton irradiated SOI bipolar transistors 78
The high rate data acquisition system for the SLIM5 beam test 78
Monolithic pixel detectors in a 0.13 um CMOS technology with sensor level continuous time charge amplification and shaping 77
Recent development on triple well 130 nm CMOS MAPS with in-pixel signal processing and data sparsification capability 77
The associative memory for the self-triggered SLIM5 silicon telescope 76
Beam test results of different configurations of deep N-well MAPS matrices featuring in pixel full signal processing 75
Feasibility studies of microelectrode silicon detectors with integrated electronics 75
Noise performances of 0.13 um CMOS technologies for detector front-end applications 74
Recent developments in 130 nm CMOS monolithic active pixel detectors 74
JFET preamplifiers with different reset techniques on detector-grade high-resistivity silicon 73
The readout of the LHC beam luminosity monitor: accurate shower energy measurements at a 40MHz repetition rate 73
A microstrip preamplifier system based on a low noise radiation hard innovative technology 73
Impact of gate-leakage current noise in sub-100 nm CMOS front-end electronics 71
Development of a triple well CMOS MAPS device with in-pixel signal processing and sparsified readout capabilities 71
The SLIM5 low mass silicon tracker demonstrator 71
Vertex detector for the SuperB Factory 71
Deep N-well CMOS MAPS with in-pixel signal processing and sparsification capabilities for the ILC vertex detector 71
Optimization of signal extraction and front-end design in a fast, multigap ionization chamber 71
JFET front-end circuits integrated in a detector-grade silicon substrate 71
Electrical Design Considerations for a 40 MHz Gas Ionization Chamber 70
Optimization of signal extraction and front-end design in a fast, multigap ionization chamber 70
Design criteria for low-noise front-end electronics in the 0.13 um CMOS generation 70
On-chip fast data sparsication for a monolithic 4096-pixel device 70
Resolution limits achievable with CMOS front-end in X and gamma-ray analysis with semiconductor detectors 70
Radiation hardness perspectives for the design of analog detector readout circuits in the 0.18 um CMOS generation 70
Noise behavior under gamma-irradiation of 0.35 um CMOS transistors 69
Effects of gamma-rays on JFET devices and circuits fabricated in a detector-compatible process 69
Initial test results of an ionization chamber shower detector for a LHC luminosity monitor 68
The SuperB silicon vertex tracker 68
Triple well CMOS active pixel sensor with in-pixel full signal analog processing 68
On some aspects of suboptimal filtering applied to f^0, f^1 and f^2 noise terms in charge measurements 67
Noise analysis of NPN SOI bipolar transistors for the design of charge measuring systems 67
“Extremely low noise amplifier for interfacing active devices to instruments for spectral analysis 67
Development of deep N-well MAPS in a 130 nm CMOS technology and beam test results on a 4k-pixel matrix with digital sparsified readout 67
Survey of noise performances and scaling effects in deep submicron CMOS devices from different foundries 67
Total Ionizing Dose Effects on the Noise Performances of a 0.13 um CMOS Technology 66
Gamma-ray response of SOI bipolar junction transistors for fast, radiation tolerant front-end electronics 66
Comparison of ionizing radiation effects in 0.18 and 0.25 um CMOS technologies for analog applications 66
MAPS in 130 nm triple well CMOS technology for HEP applications 65
Submicron CMOS technologies for low-noise analog front-end circuits 65
Proton induced damage in JFET transistors and charge preamplifiers on high-resistivity silicon 65
Pixel-level continuous-time analog signal processing for 130 nm CMOS MAPS 65
Thin pixel development for the SuperB silicon vertex tracker 64
Non-standard approach to charge signal processing in CMOS MAPS for charged particle trackers 63
Perspectives for low noise detector readout in a sub-quarter-micron CMOS SOI technology 63
Development of 130 nm CMOS monolithic active pixels with in-pixel signal processing 62
Proposal of a sparsification circuit for mixed-mode MAPS detectors 62
Development of deep N-well monolithic active pixel sensors in a 0.13 um CMOS technology 62
Response of SOI bipolar transistors exposed to gamma-rays under different dose-rate and bias conditions 62
Monolithic JFET preamplifier with nonresistive charge reset 61
Recent results from the development of silicon detectors with integrated electronics 61
Resolution Limits in 130 nm and 90 nm CMOS Technologies for Analog Front-End Applications 61
Design and performance of analog circuits for DNW-MAPS in 100-nm-scale CMOS technology 61
Fermilab silicon strip readout chip for BTeV 60
“Low Noise, High Radiation Hardness Front-End Circuits Based Upon an Upgraded JFET Monolithic Process”. 60
Totale 10.208
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Categoria #
all - tutte 40.623
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 40.623
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021542 0 0 0 0 0 122 3 116 28 132 111 30
2021/2022547 2 4 20 16 23 34 10 18 39 48 76 257
2022/20231.614 176 87 6 135 203 188 0 85 672 6 38 18
2023/2024495 53 148 14 28 62 107 4 25 3 22 11 18
2024/20251.227 21 129 32 77 13 9 56 113 274 31 132 340
2025/20263.562 220 887 1.865 253 290 47 0 0 0 0 0 0
Totale 10.968