IRIS
SPEZIALI, VALERIA
 Distribuzione geografica
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Continente #
NA - Nord America 2.636
EU - Europa 2.178
AS - Asia 1.371
AF - Africa 8
Continente sconosciuto - Info sul continente non disponibili 3
OC - Oceania 3
Totale 6.199
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Nazione #
US - Stati Uniti d'America 2.612
CN - Cina 1.317
IE - Irlanda 559
UA - Ucraina 494
FI - Finlandia 295
SE - Svezia 266
DE - Germania 224
GB - Regno Unito 125
IT - Italia 116
FR - Francia 57
SG - Singapore 34
CA - Canada 23
BE - Belgio 16
RU - Federazione Russa 13
IN - India 11
NL - Olanda 6
MU - Mauritius 5
HK - Hong Kong 4
EU - Europa 3
CH - Svizzera 2
CZ - Repubblica Ceca 2
DZ - Algeria 2
IR - Iran 2
LT - Lituania 2
NZ - Nuova Zelanda 2
AU - Australia 1
DO - Repubblica Dominicana 1
ES - Italia 1
ID - Indonesia 1
JP - Giappone 1
MY - Malesia 1
ZA - Sudafrica 1
Totale 6.199
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Città #
Dublin 559
Chandler 552
Jacksonville 530
Nanjing 428
Boardman 200
Nanchang 155
Ashburn 132
Princeton 118
Shenyang 117
Lawrence 115
Wilmington 112
Medford 110
Hebei 106
Jiaxing 96
Changsha 95
Ann Arbor 82
Hangzhou 79
Tianjin 75
Helsinki 65
Milan 55
Beijing 47
Woodbridge 38
Verona 31
Shanghai 28
Singapore 21
Toronto 20
Des Moines 19
Norwalk 18
Brussels 14
Auburn Hills 13
Chicago 12
Fairfield 12
Los Angeles 12
Ningbo 11
Jinan 10
New York 10
Seattle 10
Zhengzhou 9
Kunming 8
West Jordan 8
Augusta 7
Meda 7
Pavia 7
Taizhou 7
Fuzhou 6
Guangzhou 6
Houston 6
London 5
Dallas 4
Lanzhou 4
Leawood 4
Pune 4
Changchun 3
Phoenix 3
Washington 3
Abbiategrasso 2
Andover 2
Ardabil 2
Bangalore 2
Bergamo 2
Cedar Knolls 2
Duncan 2
Forest City 2
Haikou 2
Hasselt 2
Las Vegas 2
Taiyuan 2
Arnsberg 1
Auckland 1
Benevento 1
Bengaluru 1
Berlin 1
Birmingham 1
Bologna 1
Borås 1
Boulder 1
Canberra 1
Dalmine 1
Edmonton 1
Elk Grove Village 1
Enschede 1
Frankfurt am Main 1
Geneva 1
Kemerovo 1
Loughton 1
Mansfield 1
Massapequa 1
Monmouth Junction 1
Montréal 1
Moscow 1
Muizenberg 1
Nuremberg 1
Olomouc 1
Orange 1
Parma 1
Pasuruan 1
Pinehaven 1
Prague 1
Redmond 1
Rockville 1
Totale 4.265
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Nome #
0.13 um CMOS technologies for radiation hardness analog front-end circuits in LHC upgrades 180
Design hints for best noise and signal behaviour in DMILL amplifiers 100
Experimental study and modeling of white noise sources in submicron P and N-MOSFETs 78
Design and characterization of integrated front-end transistors in a microstrip detector technology 78
Effects induced by gamma-radiation on P and N-channel junction field effect transistors 75
The BABAR Detector 73
CMOS MAPS with pixel level sparsification and time stamping capabilities for applications at the ILC 73
130 and 90 nm CMOS technologies for detector front-end applications 73
Noise performance of 0.13 μm CMOS technologies for detector front-end applications 72
Noise limits of AToM, a 128 channel CMOS readout chip in applications with room temperature high granularity detectors 70
The analog signal processor of the auger fluorescence detector prototype 69
Deep submicron CMOS transistors for low-noise front-end systems 69
Low-noise design criteria for detector readout systems in deep submicron CMOS technology 69
Impact of Lateral Isolation Oxides on Radiation-Induced Noise Degradation in CMOS Technologies in the 100-nm Regime 68
CMOS technologies in the 100 nm range for rad-hard front-end electronics in future collider experiments. 68
A 4096-pixel MAPS device with on-chip data sparsification 68
Proton induced damage in JFET transistors and charge preamplifiers on high-resistivity silicon 67
The analog signal processing system for the Auger fluorescence detector prototype 67
The analog signal processing system for the Auger fluorescence detector prototype 67
Noise Behavior of a 180 nm CMOS SOI Technology for Detector Front-End Electronics 66
Response of SOI bipolar transistors exposed to gamma-rays under different dose rate and bias conditions 65
Noise characterization of 130 nm and 90 nm CMOS technologies for analog front-end electronics 64
Radiation tolerance of a 0.18 um CMOS process 64
A novel monolithic active pixel detector in 0.13 μm triple well CMOS technology with pixel level analog processing 64
2D and 3D thin pixel technologies for the Layer0 of the SuperB Silicon Vertex Tracker 64
Bulk damage in proton irradiated JFET transistors and charge preamplifiers on high resistivity silicon 63
JFET-CMOS Microstrip Front-end 63
“Complementi al corso di Strumentazione e Misure Elettroniche “. 63
Integrated front-end electronics in a detector compatible process: source-follower and charge-sensitive preamplifier configuration 62
An ionization chamber shower detector for the LHC luminosity monitor 62
Development of a detector for bunch by bunch measurements and optimization of luminosity in the LHC 62
CMOS MAPS with fully integrated, hybrid-pixel-like analog front-end electronics 61
Fabrication of Microstrip Detectors and Integrated Electronics on High Resistivity Silicon 61
The high rate data acquisition system for the SLIM5 beam test 61
Noise performances of 0.13 um CMOS technologies for detector front-end applications 60
The associative memory for the self-triggered SLIM5 silicon telescope 60
Monolithic pixel detectors in a 0.13 um CMOS technology with sensor level continuous time charge amplification and shaping 60
Deep n-well MAPS in a 130 nm CMOS technology: Beam test results 60
Noise degradation induced by γ-rays on P- and N-channel junction field-effect transistors 59
The superB silicon vertex tracker 59
Radiation hardness study of proton irradiated SOI bipolar transistors 58
Instrumentation for noise measurements on CMOS transistors for fast detector preamplifiers 58
JFET preamplifiers with different reset techniques on detector-grade high-resistivity silicon 58
Recent development on triple well 130 nm CMOS MAPS with in-pixel signal processing and data sparsification capability 58
Evolution in the criteria that underlie the design of a monolithic preamplifier system for microstrip detectors 58
MAPS in 130 nm triple well CMOS technology for HEP applications 57
A new approach to the design of monolithic active pixel detectors in 0.13 um triple well CMOS technology 57
A study for the detection of ionizing particles with phototransistors on thick high-resistivity silicon substrates 57
Beam-test results of 4k pixel CMOS MAPS and high resistivity striplet detectors equipped with digital sparsied readout in the Slim5 low mass silicon demonstrator 57
Initial test results of an ionization chamber shower detector for a LHC luminosity monitor 56
Vertex detector for the SuperB Factory 56
Optimization of signal extraction and front-end design in a fast, multigap ionization chamber 55
Impact of gate-leakage current noise in sub-100 nm CMOS front-end electronics 55
On the design of a JFET-CMOS front-end for low noise data acquisition from microstrip detectors 55
Resolution limits achievable with CMOS front-end in X and gamma-ray analysis with semiconductor detectors 55
An ionization chamber shower detector for the LHC luminosity monitor 55
Feasibility studies of microelectrode silicon detectors with integrated electronics 55
Effects of gamma-rays on JFET devices and circuits fabricated in a detector-compatible process 55
Total Ionizing Dose Effects on the Noise Performances of a 0.13 um CMOS Technology 54
Electrical Design Considerations for a 40 MHz Gas Ionization Chamber 53
Recent developments in 130 nm CMOS monolithic active pixel detectors 53
On-chip fast data sparsication for a monolithic 4096-pixel device 53
A fabrication process for silicon microstrip detectors with integrated front-end electronics 52
Noise analysis of NPN SOI bipolar transistors for the design of charge measuring systems 52
Development of a triple well CMOS MAPS device with in-pixel signal processing and sparsified readout capabilities 52
Thin pixel development for the SuperB silicon vertex tracker 52
The readout of the LHC beam luminosity monitor: accurate shower energy measurements at a 40MHz repetition rate 52
Radiation hardness perspectives for the design of analog detector readout circuits in the 0.18 um CMOS generation 52
Design criteria for low-noise front-end electronics in the 0.13 um CMOS generation 51
Recent results from the development of silicon detectors with integrated electronics 51
Proton induced damage in JFET transistors and charge preamplifiers on high-resistivity silicon 51
Gamma-ray response of SOI bipolar junction transistors for fast, radiation tolerant front-end electronics 51
Non-standard approach to charge signal processing in CMOS MAPS for charged particle trackers 50
Development of 130 nm CMOS monolithic active pixels with in-pixel signal processing 50
On some aspects of suboptimal filtering applied to f^0, f^1 and f^2 noise terms in charge measurements 50
The SuperB silicon vertex tracker 50
“Extremely low noise amplifier for interfacing active devices to instruments for spectral analysis 50
Noise behavior under gamma-irradiation of 0.35 um CMOS transistors 50
A microstrip preamplifier system based on a low noise radiation hard innovative technology 50
Submicron CMOS technologies for low-noise analog front-end circuits 49
Beam test results of different configurations of deep N-well MAPS matrices featuring in pixel full signal processing 49
Deep N-well CMOS MAPS with in-pixel signal processing and sparsification capabilities for the ILC vertex detector 49
The SLIM5 low mass silicon tracker demonstrator 48
Pixel-level continuous-time analog signal processing for 130 nm CMOS MAPS 48
Triple well CMOS active pixel sensor with in-pixel full signal analog processing 48
Survey of noise performances and scaling effects in deep submicron CMOS devices from different foundries 48
Ionizing radiation effects on JFET devices and circuits fabricated in a detector-compatible process 47
Perspectives for low noise detector readout in a sub-quarter-micron CMOS SOI technology 47
Proposal of a sparsification circuit for mixed-mode MAPS detectors 46
“Low Noise, High Radiation Hardness Front-End Circuits Based Upon an Upgraded JFET Monolithic Process”. 46
Development of deep N-well MAPS in a 130 nm CMOS technology and beam test results on a 4k-pixel matrix with digital sparsified readout 46
Optimization of signal extraction and front-end design in a fast, multigap ionization chamber 46
Design and performance of analog circuits for DNW-MAPS in 100-nm-scale CMOS technology 46
Monolithic JFET preamplifier with nonresistive charge reset 45
Fermilab silicon strip readout chip for BTeV 45
JFET front-end circuits integrated in a detector-grade silicon substrate 45
“Preamplifiers for Room Temperature and Cryogenic Applications Based on DMILL Technology” 45
Development of deep N-well monolithic active pixel sensors in a 0.13 um CMOS technology 44
Comparison of ionizing radiation effects in 0.18 and 0.25 um CMOS technologies for analog applications 43
JFET front-end circuits integrated in a detector-grade silicon substrate 43
Totale 5.854
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Categoria #
all - tutte 23.770
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 23.770
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020428 0 0 0 88 3 89 8 91 2 95 51 1
2020/2021827 93 73 27 88 4 122 3 116 28 132 111 30
2021/2022547 2 4 20 16 23 34 10 18 39 48 76 257
2022/20231.614 176 87 6 135 203 188 0 85 672 6 38 18
2023/2024495 53 148 14 28 62 107 4 25 3 22 11 18
2024/2025173 21 129 23 0 0 0 0 0 0 0 0 0
Totale 6.352