IRIS
SPEZIALI, VALERIA
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
NA - Nord America 6.943
AS - Asia 2.973
EU - Europa 2.690
SA - Sud America 347
Continente sconosciuto - Info sul continente non disponibili 159
AF - Africa 61
OC - Oceania 7
Totale 13.180
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 6.861
CN - Cina 1.636
SG - Singapore 652
IE - Irlanda 559
UA - Ucraina 499
FI - Finlandia 308
DE - Germania 278
HK - Hong Kong 277
SE - Svezia 272
BR - Brasile 252
RU - Federazione Russa 212
VN - Vietnam 179
FR - Francia 162
GB - Regno Unito 156
IT - Italia 152
IN - India 43
CA - Canada 40
BD - Bangladesh 33
AR - Argentina 31
IQ - Iraq 29
ZA - Sudafrica 24
BE - Belgio 19
EC - Ecuador 18
MX - Messico 17
AT - Austria 16
ES - Italia 13
NL - Olanda 13
CO - Colombia 12
TR - Turchia 12
JP - Giappone 11
SA - Arabia Saudita 11
MY - Malesia 10
VE - Venezuela 10
PH - Filippine 9
PL - Polonia 9
CL - Cile 8
NP - Nepal 8
PK - Pakistan 8
ID - Indonesia 7
DO - Repubblica Dominicana 6
DZ - Algeria 6
UZ - Uzbekistan 6
AE - Emirati Arabi Uniti 5
CR - Costa Rica 5
JO - Giordania 5
KE - Kenya 5
LB - Libano 5
MU - Mauritius 5
OM - Oman 5
TN - Tunisia 5
GT - Guatemala 4
JM - Giamaica 4
LT - Lituania 4
PE - Perù 4
PY - Paraguay 4
RO - Romania 4
UY - Uruguay 4
AU - Australia 3
CH - Svizzera 3
CZ - Repubblica Ceca 3
ET - Etiopia 3
EU - Europa 3
IR - Iran 3
MA - Marocco 3
NI - Nicaragua 3
AZ - Azerbaigian 2
BG - Bulgaria 2
BH - Bahrain 2
BN - Brunei Darussalam 2
BO - Bolivia 2
EG - Egitto 2
GY - Guiana 2
IL - Israele 2
KZ - Kazakistan 2
NZ - Nuova Zelanda 2
TH - Thailandia 2
TT - Trinidad e Tobago 2
XK - ???statistics.table.value.countryCode.XK??? 2
AL - Albania 1
AM - Armenia 1
BA - Bosnia-Erzegovina 1
CI - Costa d'Avorio 1
CM - Camerun 1
CW - ???statistics.table.value.countryCode.CW??? 1
GA - Gabon 1
GE - Georgia 1
GM - Gambi 1
GN - Guinea 1
HR - Croazia 1
KG - Kirghizistan 1
KR - Corea 1
KW - Kuwait 1
LA - Repubblica Popolare Democratica del Laos 1
MZ - Mozambico 1
NA - Namibia 1
NC - Nuova Caledonia 1
NG - Nigeria 1
PS - Palestinian Territory 1
PT - Portogallo 1
RS - Serbia 1
Totale 13.024
Salva come PNG Salva come JPEG
Città #
Dallas 2.475
San Jose 580
Dublin 559
Chandler 552
Jacksonville 531
Nanjing 428
Singapore 311
Ashburn 271
Council Bluffs 269
Hong Kong 268
Boardman 226
Nanchang 155
Beijing 152
Princeton 119
Shenyang 117
Lawrence 116
Wilmington 112
Medford 110
Hebei 106
Changsha 102
Jiaxing 97
Lauterbourg 95
Los Angeles 89
Ann Arbor 82
Hangzhou 81
Tianjin 76
Ho Chi Minh City 70
Helsinki 66
Buffalo 64
Milan 61
Hanoi 45
Moscow 40
Woodbridge 39
Shanghai 37
New York 32
Verona 31
Santa Clara 30
Toronto 24
Chicago 23
São Paulo 22
Des Moines 21
Munich 18
Norwalk 18
Redondo Beach 18
Brussels 17
Brooklyn 16
Johannesburg 15
Baghdad 14
Guangzhou 14
Jinan 14
Nuremberg 14
Auburn Hills 13
Fairfield 12
Frankfurt am Main 12
Ningbo 12
Orem 12
Phoenix 12
Seattle 12
Turku 12
Zhengzhou 12
London 11
Atlanta 10
Tokyo 10
Brasília 9
Kunming 9
Warsaw 9
Augusta 8
Pavia 8
Rio de Janeiro 8
Taizhou 8
Vienna 8
West Jordan 8
Da Nang 7
Fuzhou 7
Houston 7
Meda 7
Quito 7
San Francisco 7
Chennai 6
Guayaquil 6
Haiphong 6
Montreal 6
Rome 6
Stockholm 6
Tashkent 6
Boston 5
Curitiba 5
Manchester 5
Riyadh 5
San Diego 5
Secaucus 5
Amman 4
Buenos Aires 4
Bến Tre 4
Changchun 4
Charlotte 4
Cleveland 4
Columbus 4
Denver 4
Dhaka 4
Totale 9.207
Salva come PNG Salva come JPEG
Nome #
0.13 um CMOS technologies for radiation hardness analog front-end circuits in LHC upgrades 2.575
Design hints for best noise and signal behaviour in DMILL amplifiers 152
CMOS technologies in the 100 nm range for rad-hard front-end electronics in future collider experiments. 131
An ionization chamber shower detector for the LHC luminosity monitor 130
130 and 90 nm CMOS technologies for detector front-end applications 128
A 4096-pixel MAPS device with on-chip data sparsification 127
2D and 3D thin pixel technologies for the Layer0 of the SuperB Silicon Vertex Tracker 126
A novel monolithic active pixel detector in 0.13 μm triple well CMOS technology with pixel level analog processing 125
An ionization chamber shower detector for the LHC luminosity monitor 123
Design and characterization of integrated front-end transistors in a microstrip detector technology 120
CMOS MAPS with pixel level sparsification and time stamping capabilities for applications at the ILC 120
The BABAR Detector 118
Deep n-well MAPS in a 130 nm CMOS technology: Beam test results 116
Bulk damage in proton irradiated JFET transistors and charge preamplifiers on high resistivity silicon 115
Experimental study and modeling of white noise sources in submicron P and N-MOSFETs 114
On the design of a JFET-CMOS front-end for low noise data acquisition from microstrip detectors 113
JFET-CMOS Microstrip Front-end 113
CMOS MAPS with fully integrated, hybrid-pixel-like analog front-end electronics 112
Beam-test results of 4k pixel CMOS MAPS and high resistivity striplet detectors equipped with digital sparsied readout in the Slim5 low mass silicon demonstrator 112
“Preamplifiers for Room Temperature and Cryogenic Applications Based on DMILL Technology” 111
A new approach to the design of monolithic active pixel detectors in 0.13 um triple well CMOS technology 110
A study for the detection of ionizing particles with phototransistors on thick high-resistivity silicon substrates 109
The analog signal processing system for the Auger fluorescence detector prototype 109
The analog signal processor of the auger fluorescence detector prototype 108
Low-noise design criteria for detector readout systems in deep submicron CMOS technology 108
Noise characterization of 130 nm and 90 nm CMOS technologies for analog front-end electronics 106
A fabrication process for silicon microstrip detectors with integrated front-end electronics 106
Integrated front-end electronics in a detector compatible process: source-follower and charge-sensitive preamplifier configuration 105
Development of a detector for bunch by bunch measurements and optimization of luminosity in the LHC 105
Effects induced by gamma-radiation on P and N-channel junction field effect transistors 104
Impact of Lateral Isolation Oxides on Radiation-Induced Noise Degradation in CMOS Technologies in the 100-nm Regime 104
The analog signal processing system for the Auger fluorescence detector prototype 104
Noise performance of 0.13 μm CMOS technologies for detector front-end applications 103
Noise limits of AToM, a 128 channel CMOS readout chip in applications with room temperature high granularity detectors 102
Noise degradation induced by γ-rays on P- and N-channel junction field-effect transistors 102
Deep submicron CMOS transistors for low-noise front-end systems 102
Radiation hardness study of proton irradiated SOI bipolar transistors 101
Proton induced damage in JFET transistors and charge preamplifiers on high-resistivity silicon 101
Fabrication of Microstrip Detectors and Integrated Electronics on High Resistivity Silicon 101
Evolution in the criteria that underlie the design of a monolithic preamplifier system for microstrip detectors 101
“Complementi al corso di Strumentazione e Misure Elettroniche “. 99
Response of SOI bipolar transistors exposed to gamma-rays under different dose rate and bias conditions 99
Monolithic pixel detectors in a 0.13 um CMOS technology with sensor level continuous time charge amplification and shaping 98
Beam test results of different configurations of deep N-well MAPS matrices featuring in pixel full signal processing 98
Instrumentation for noise measurements on CMOS transistors for fast detector preamplifiers 97
Noise Behavior of a 180 nm CMOS SOI Technology for Detector Front-End Electronics 97
Noise behavior under gamma-irradiation of 0.35 um CMOS transistors 96
Feasibility studies of microelectrode silicon detectors with integrated electronics 96
A microstrip preamplifier system based on a low noise radiation hard innovative technology 96
Optimization of signal extraction and front-end design in a fast, multigap ionization chamber 96
Recent development on triple well 130 nm CMOS MAPS with in-pixel signal processing and data sparsification capability 95
The superB silicon vertex tracker 94
Noise performances of 0.13 um CMOS technologies for detector front-end applications 93
Effects of gamma-rays on JFET devices and circuits fabricated in a detector-compatible process 93
Radiation tolerance of a 0.18 um CMOS process 92
Thin pixel development for the SuperB silicon vertex tracker 92
Survey of noise performances and scaling effects in deep submicron CMOS devices from different foundries 92
The associative memory for the self-triggered SLIM5 silicon telescope 91
Electrical Design Considerations for a 40 MHz Gas Ionization Chamber 90
The SuperB silicon vertex tracker 90
Recent developments in 130 nm CMOS monolithic active pixel detectors 89
The readout of the LHC beam luminosity monitor: accurate shower energy measurements at a 40MHz repetition rate 89
The high rate data acquisition system for the SLIM5 beam test 89
Radiation hardness perspectives for the design of analog detector readout circuits in the 0.18 um CMOS generation 89
Triple well CMOS active pixel sensor with in-pixel full signal analog processing 89
JFET front-end circuits integrated in a detector-grade silicon substrate 89
Initial test results of an ionization chamber shower detector for a LHC luminosity monitor 88
The SLIM5 low mass silicon tracker demonstrator 88
Development of deep N-well MAPS in a 130 nm CMOS technology and beam test results on a 4k-pixel matrix with digital sparsified readout 88
Comparison of ionizing radiation effects in 0.18 and 0.25 um CMOS technologies for analog applications 88
On some aspects of suboptimal filtering applied to f^0, f^1 and f^2 noise terms in charge measurements 87
Impact of gate-leakage current noise in sub-100 nm CMOS front-end electronics 86
Noise analysis of NPN SOI bipolar transistors for the design of charge measuring systems 86
JFET preamplifiers with different reset techniques on detector-grade high-resistivity silicon 86
Development of a triple well CMOS MAPS device with in-pixel signal processing and sparsified readout capabilities 86
“Extremely low noise amplifier for interfacing active devices to instruments for spectral analysis 86
Resolution limits achievable with CMOS front-end in X and gamma-ray analysis with semiconductor detectors 86
Perspectives for low noise detector readout in a sub-quarter-micron CMOS SOI technology 86
MAPS in 130 nm triple well CMOS technology for HEP applications 85
Submicron CMOS technologies for low-noise analog front-end circuits 85
Design criteria for low-noise front-end electronics in the 0.13 um CMOS generation 85
On-chip fast data sparsication for a monolithic 4096-pixel device 85
Optimization of signal extraction and front-end design in a fast, multigap ionization chamber 83
Non-standard approach to charge signal processing in CMOS MAPS for charged particle trackers 83
Total Ionizing Dose Effects on the Noise Performances of a 0.13 um CMOS Technology 83
Vertex detector for the SuperB Factory 83
Gamma-ray response of SOI bipolar junction transistors for fast, radiation tolerant front-end electronics 83
Proton induced damage in JFET transistors and charge preamplifiers on high-resistivity silicon 81
Deep N-well CMOS MAPS with in-pixel signal processing and sparsification capabilities for the ILC vertex detector 81
Response of SOI bipolar transistors exposed to gamma-rays under different dose-rate and bias conditions 81
Pixel-level continuous-time analog signal processing for 130 nm CMOS MAPS 81
Monolithic JFET preamplifier with nonresistive charge reset 79
Design and performance of analog circuits for DNW-MAPS in 100-nm-scale CMOS technology 79
Proposal of a sparsification circuit for mixed-mode MAPS detectors 78
“Low Noise, High Radiation Hardness Front-End Circuits Based Upon an Upgraded JFET Monolithic Process”. 78
Recent results from the development of silicon detectors with integrated electronics 76
Development of deep N-well monolithic active pixel sensors in a 0.13 um CMOS technology 76
Fermilab silicon strip readout chip for BTeV 75
Minimum noise design of charge amplifiers with CMOS processes in the 100 nm feature size range 74
Development of 130 nm CMOS monolithic active pixels with in-pixel signal processing 73
Totale 12.208
Salva come PNG Salva come JPEG
Categoria #
all - tutte 50.072
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 50.072
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022521 0 0 0 16 23 34 10 18 39 48 76 257
2022/20231.614 176 87 6 135 203 188 0 85 672 6 38 18
2023/2024495 53 148 14 28 62 107 4 25 3 22 11 18
2024/20251.227 21 129 32 77 13 9 56 113 274 31 132 340
2025/20265.084 220 887 1.865 253 290 152 555 171 225 199 121 146
2026/2027690 68 201 200 221 0 0 0 0 0 0 0 0
Totale 13.180