Distribuzione geografica
Continente #
NA - Nord America 1970
EU - Europa 1890
AS - Asia 1185
Continente sconosciuto - Info sul continente non disponibili 3
OC - Oceania 2
AF - Africa 1
SA - Sud America 1
Totale 5052
Nazione #
US - Stati Uniti d'America 1963
CN - Cina 1173
IE - Irlanda 570
UA - Ucraina 474
FI - Finlandia 222
DE - Germania 213
IT - Italia 140
SE - Svezia 125
GB - Regno Unito 75
FR - Francia 42
BE - Belgio 20
CA - Canada 7
NL - Olanda 4
EU - Europa 3
IN - India 3
KR - Corea 3
RU - Federazione Russa 3
AU - Australia 2
IR - Iran 2
CH - Svizzera 1
CL - Cile 1
GR - Grecia 1
HK - Hong Kong 1
JP - Giappone 1
MU - Mauritius 1
MY - Malesia 1
TR - Turchia 1
Totale 5052
Città #
Dublin 570
Jacksonville 549
Chandler 543
Nanjing 371
Nanchang 148
Shenyang 123
Princeton 108
Hebei 107
Lawrence 103
Wilmington 95
Jiaxing 92
Changsha 84
Beijing 66
Ann Arbor 65
Hangzhou 65
Boardman 61
Medford 61
Tianjin 55
Woodbridge 39
Milan 32
Verona 28
Pavia 25
Brussels 19
Helsinki 16
Norwalk 12
Des Moines 10
Fairfield 9
Jinan 9
Auburn Hills 8
Houston 8
Ningbo 8
Los Angeles 6
Toronto 6
Zhengzhou 6
Fuzhou 5
Shanghai 5
Ashburn 4
Changchun 3
Kunming 3
Leawood 3
San Francisco 3
Taizhou 3
Almere Stad 2
Borås 2
Fiorenzuola d'Arda 2
Lanzhou 2
New York 2
Orange 2
Redmond 2
Andover 1
Augusta 1
Berlin 1
Bethesda 1
Central 1
Dearborn 1
Edmonton 1
Gostar 1
Guangzhou 1
Haikou 1
Kemerovo 1
Leninsk-kuznetskiy 1
Monmouth Junction 1
Novokuznetsk 1
Ponte Vedra Beach 1
Reston 1
Rochedale 1
San Genesio Ed Uniti 1
Sydney 1
Zanjan 1
Totale 3570
Nome #
Brewster angle technique to study metal nanoparticle distributions in dielectric matrix 82
Photoreflectance investigation of InAs/GaAs self-assembled quantum DOTS grow by ALMBE 77
Effect of nitrogen on the temperature dependence of the energy gap in InxGa1-xAs1-yNy/GaAs single quantum wells 74
H irradiation effects on the GaAs-like Raman modes in GaAs1-xNx/GaAs1-xNx:H planar heterostructures 73
Residual strain measurements in InGaAs metamorphic buffer layers on GaAs 71
Photoreflectance and Reflectance investigation of deuterium-irradiated GaAsN 71
Luminescence from beta-FeSi_2 Precipitates in Si. II: Origin and Nature of the Photoluminescence 70
Calibration of an equipped single stroke tablet press 68
Quantum dot strain engineering of InAs/InGaAs nanostructures 67
An all optical mapping of the strain field in GaAsN/GaAsN:H wires 67
Engineering of quantum dot structures for light emission in thespectral windows of photonic interest 63
Metamorphic buffers and optical measurement of residual strain 62
Optical study of hydrogen-irradiated GaAsN/GaAs heterostructures 62
Study of metal and semiconductor nano-clusters crystalline stability versus temperature and quantum effects 62
Above the band gap structures in Ge nanoparticles: optical absorption spectra il Nuovo Cimento 18 D, 865 (1996) 61
Studies of photoreflectance spectra in Cd(1-x)Mn(x)Te/CdTe superlattices with high compositions 61
Characterization of impurities in silicon by IR spectroscopy 61
Effect of charge density wave on thermoreflectance spectra of 2H-NbSe2 61
Direct evidence of oxygen precipitates in epitaxial silicon obtained by micro-Fourier transform infrared spectroscopy 60
Studies of photoreflectance spectra in Cd(x)Mn(1-x)Te/CdTe superlattices with high compositions 59
Photoreflectance study of hydrogenated (InGa) (AsN)/GaAs heterostructures 59
Effect of temperature on the optical properties of (InGa)(AsN)/GaAs single quantum wells 58
Photoreflectance of GaSb/Al0.4Ga0.6Sb single quantum wells 58
Disintegrating force as a new formulation parameter 57
Investigation of doping in Si crystals by means of electroreflectance 57
A new computer-aided apparatus for simultaneous measurements of water uptake and swelling force in tablets 56
The role of wetting layer states on the emission efficiency of InAs/InGaAs metamorphic quantum dot nanostructures 55
Boron accumulation at epi-substrate silicon interface during epitaxial growth 55
Interband optical properties of molecular-beam epitaxially-grown GaAs1-xSbx on GaAs substrates 54
DIagnostica ottica dei materiali: alcuni esempi 54
Different quantum behavior of the E1 and E2 spectral structures in Ge nanocrystals 54
Photoreflectance characterization of InAs/GaAs self-assembled quantum dots grown by ALMBE 53
A new computer-aided apparatus for simultaneous measurements of water uptake and swelling force in tablets 53
Water uptake to fast disintegrating tablets and Weibull function 53
Fast disintegrating tablets. A computer-aided method for describing water uptake kinetics 53
Quantum confinement effects above the band gap in Ge quantum dots 52
Infrared study of Fe-B-pair behavior in iron-implanted Czochralski silicon 52
Optical determination of free-carrier concentration in epitaxial layers of n-type silicon grown on N+ or N− substrates 52
Photoreflectance investigation of hydrogenated (InGa)(AsN)/GaAs heterostructures 50
Optical Study of Strained and Relaxed Epitaxial InxGa1-xAs on GaAs 50
Optical characterization of hierarchically self-assembled GaAs/AlGaAs quantum dots 50
Raman scattering in InAs/AlGaAS quantum dot nanostructures 50
Thermoreflectance study of the direct optical gap in epitaxial AlxGa1-xSb (x<=0.5) 49
Optical study of the strain effect in pseudomorphic In1-xGaxAs-InP heterostructures 49
Thermal redistribution of iron implanted in Czochralski silicon 49
Optical study of coherently grown InGaAs/InP heterostructures 48
Il problema dell'adattamento delle proprietà ottiche dei materiali a particolari esigenze applicative 48
Optical determination of strain field in GaAsN/GaAsN:H planar heterostructures 48
Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V metalorganic sources 48
Temperature dependence of light emission and absorption in (InGa)(AsN)/GaAs single quantum wells 47
Step pseudomorphic asymmetric wells: an optical study in the framework of III-V strain induced sub-2D quantum systems 47
Infrared investigation of the presence of Fe in B-doped polycrystalline silicon 47
Photoreflectance evidence on the N-induced increase of the exciton binding energy in a InGaAsN alloy 46
Optical Study of AlGaSb/GaSb Single Quantum Wells 45
Study of nano-clusters crystalline stability versus temperature and quantum effects 45
Photoreflectance study of growth mode in InAs-GaAs quasimonolayer single quantum wells 45
Interstitial oxygen determination in heavily doped silicon 44
Oxygen Behavior during Silicon Epitaxial Growth: Recent Advances 44
Quantitative determination of high-temperature oxygen microprecipitates in Czochralski silicon by micro-Fourier transform infrared spectroscopy 44
Oxygen behaviour in Czochralski silicon substrates and epitaxial layers 44
Optical investigation of ALMBE grown InAs self-assembled quantum dots embedded in InxGa1-xAs matrix 44
Oxygen and iron redistribution upon thermal treatment in iron implanted silicon 44
Effect of disorder on structures due to interband transitions in silicon 44
Reflectance study of Al_(0.4)Ga_(0.6)Sb/GaSb single quantum wells 43
Infrared microcharacterization of grain boundaries in polycrystalline silicon 43
Optical determination of oxygen outdiffusion in epitaxial silicon grown on n-type Czochralski substrates 43
Tablet weight uniformity and dissolution rate variations 42
Plasmons and interband transitions in Ti_{1-x}Hf_xSe_2 systems 42
Photoelectron mean free path in Al films of M.O.S. structures 42
Optical characterization of semiconductor, interfaces and heterostructures 42
Optical analysis of oxygen in epitaxial silicon 42
Infrared study of iron impurities in polycrystalline solar grade silicon 41
Photoreflectance spectroscopy of InAs self-assembled quantum dots 41
Infrared determination of interstitial oxygen behavior during epitaxial silicon growth on Czochralski substrates 41
Infrared thermoreflectance of VχTi(1-χ)Se2 41
Optical Study of the Strain-driven Tuning of the Emission Energy in InAs/InGaAs Quantum Dot Nanostructures 41
Infrared angular spectroscopy characterization of epitaxial layers of n-type silicon grown on N+ or P+ substrates 40
Optical Interference to Determine the Free Carrier Concentration in Semiconducting Epitaxial Layers 40
Photoreflectance line shape in quantum-confined semiconductor systems: the case of dilute nitrides 39
Photoreflectance versus ellipsometry investigation of GaAs/Al0.3Ga0.7As MQW's 39
Reflectancevs. Electroreflectance measurements on arsenic-doped silicon crystal 38
New achievements of electroreflectance to study doping inhomogeneities in semiconductors 38
Thermodynamic Properties and Optical Characterization of Metal Nanoparticles in Dielectric Matrix 38
Photoreflectance analysis of MQW in intermediate electric field regime 38
Infrared study of oxygen precipitates in Czochralski grown silicon 37
Optical characterization of epitaxial and doped semiconductors 37
Impurities in Silicon Crystals and Silicon Epitaxial Films: Recent Advances 35
Interstitial oxygen determination near epitaxial silicon and Czochralski silicon interface 35
Optical characterization of AlxGa1-xSb/GaSb epitaxial layers 35
Quantitative IR spectroscopy of interstitial Oxygen in heavily doped Silicon 33
Modellizzazione dei dati di assorbimento di acqua 33
Photocurrents in MOS devices 32
Photoelectron–grain boundary scattering in al films of MOS structures 30
Photoreflectance Characterization of InGaAs Lattice Matched to InP 30
Stoichiometry of oxygen precipitates in silicon 30
Totale 4976
Categoria #
all - tutte 9719
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 9719

Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2017/2018107 0000 00 00 010241
2018/2019373 1113812 50 1043 99523
2019/20201498 407640286 194 696 1121422
2020/2021767 97791791 3109 2118 1611310616
2021/2022402 64105 322 1128 26565217
2022/20231540 14110510162 143185 390 701000
Totale 5101