IRIS
GEDDO, MARIO
 Distribuzione geografica
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Continente #
NA - Nord America 3.869
AS - Asia 2.857
EU - Europa 2.755
SA - Sud America 281
AF - Africa 160
OC - Oceania 5
Continente sconosciuto - Info sul continente non disponibili 4
Totale 9.931
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Nazione #
US - Stati Uniti d'America 3.802
CN - Cina 1.499
SG - Singapore 644
DE - Germania 540
IE - Irlanda 506
UA - Ucraina 479
FI - Finlandia 399
HK - Hong Kong 271
BR - Brasile 202
VN - Vietnam 197
RU - Federazione Russa 196
IT - Italia 165
FR - Francia 144
SE - Svezia 132
ZA - Sudafrica 118
GB - Regno Unito 114
IN - India 70
CA - Canada 35
AR - Argentina 27
BD - Bangladesh 25
MX - Messico 25
IQ - Iraq 24
TR - Turchia 19
BE - Belgio 17
JP - Giappone 17
NL - Olanda 13
PL - Polonia 13
ID - Indonesia 12
SA - Arabia Saudita 12
EC - Ecuador 11
CO - Colombia 10
PK - Pakistan 10
ES - Italia 9
VE - Venezuela 9
KR - Corea 8
KE - Kenya 7
CL - Cile 6
LT - Lituania 6
UY - Uruguay 6
UZ - Uzbekistan 6
AT - Austria 5
MA - Marocco 5
MY - Malesia 5
PE - Perù 5
PH - Filippine 5
AU - Australia 4
CH - Svizzera 4
EG - Egitto 4
IR - Iran 4
SN - Senegal 4
TN - Tunisia 4
AO - Angola 3
CZ - Repubblica Ceca 3
DZ - Algeria 3
EU - Europa 3
IL - Israele 3
JO - Giordania 3
NI - Nicaragua 3
PY - Paraguay 3
QA - Qatar 3
AL - Albania 2
AZ - Azerbaigian 2
BG - Bulgaria 2
BH - Bahrain 2
CI - Costa d'Avorio 2
ET - Etiopia 2
GT - Guatemala 2
KG - Kirghizistan 2
KW - Kuwait 2
KZ - Kazakistan 2
ML - Mali 2
MU - Mauritius 2
NP - Nepal 2
PS - Palestinian Territory 2
AE - Emirati Arabi Uniti 1
AM - Armenia 1
BF - Burkina Faso 1
CY - Cipro 1
EE - Estonia 1
GR - Grecia 1
GY - Guiana 1
HR - Croazia 1
HU - Ungheria 1
KH - Cambogia 1
KN - Saint Kitts e Nevis 1
LK - Sri Lanka 1
MR - Mauritania 1
NO - Norvegia 1
NZ - Nuova Zelanda 1
PA - Panama 1
PT - Portogallo 1
RE - Reunion 1
SC - Seychelles 1
SR - Suriname 1
SY - Repubblica araba siriana 1
XK - ???statistics.table.value.countryCode.XK??? 1
Totale 9.931
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Città #
Jacksonville 549
Chandler 543
Dublin 506
Nanjing 373
San Jose 362
Singapore 349
Ashburn 322
Dallas 302
Munich 298
Hong Kong 262
Beijing 167
Boardman 167
Helsinki 166
Nanchang 149
Shenyang 124
Johannesburg 108
Princeton 108
Hebei 107
Lawrence 103
Wilmington 95
Jiaxing 94
Lauterbourg 93
Changsha 87
Los Angeles 79
Hangzhou 66
Ann Arbor 65
Medford 61
Ho Chi Minh City 57
Tianjin 57
Hanoi 55
Buffalo 40
Woodbridge 39
Milan 37
Moscow 35
Shanghai 32
Redondo Beach 30
Orem 29
Verona 28
Pavia 25
New York 24
São Paulo 23
Santa Clara 19
Chennai 18
Toronto 18
Brussels 16
Columbus 16
The Dalles 16
Tokyo 16
Washington 16
Frankfurt am Main 13
Houston 13
Baghdad 12
Jyväskylä 12
London 12
Norwalk 12
Seattle 12
Warsaw 12
Atlanta 11
Da Nang 11
Denver 11
Des Moines 11
Jinan 10
Turku 10
Amsterdam 9
Brooklyn 9
Fairfield 9
Ningbo 9
Auburn Hills 8
New Delhi 8
San Francisco 8
Zhengzhou 8
Belo Horizonte 7
Chicago 7
Delhi 7
Dhaka 7
Guangzhou 7
Manchester 7
Montreal 7
Mumbai 7
Stockholm 7
Guayaquil 6
Haiphong 6
Jeddah 6
Mexico City 6
Nairobi 6
Nuremberg 6
Phoenix 6
Tappahannock 6
Tashkent 6
Boston 5
Charlotte 5
Chongqing 5
Council Bluffs 5
Fuzhou 5
Lima 5
Montevideo 5
Santiago 5
Secaucus 5
Ankara 4
Biên Hòa 4
Totale 6.751
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Nome #
Engineering of quantum dot structures for light emission in thespectral windows of photonic interest 279
DIagnostica ottica dei materiali: alcuni esempi 259
Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V metalorganic sources 230
An all optical mapping of the strain field in GaAsN/GaAsN:H wires 164
H irradiation effects on the GaAs-like Raman modes in GaAs1-xNx/GaAs1-xNx:H planar heterostructures 153
Effect of nitrogen on the temperature dependence of the energy gap in InxGa1-xAs1-yNy/GaAs single quantum wells 151
A new computer-aided apparatus for simultaneous measurements of water uptake and swelling force in tablets 149
Photoreflectance and Reflectance investigation of deuterium-irradiated GaAsN 145
Brewster angle technique to study metal nanoparticle distributions in dielectric matrix 144
EVOLUTION OF THE OPTICAL PROPERTIES OF INAS/GAAS QUANTUM DOTS FOR INCREASING INAS COVERAGES 140
EFFECT OF HYDROGEN ON THE ELECTRONIC PROPERTIES OF GAAS(1-Y)N(Y) HETEROSTRUCTURES 138
Above the band gap structures in Ge nanoparticles: optical absorption spectra il Nuovo Cimento 18 D, 865 (1996) 135
Direct evidence of oxygen precipitates in epitaxial silicon obtained by micro-Fourier transform infrared spectroscopy 135
A new computer-aided apparatus for simultaneous measurements of water uptake and swelling force in tablets 134
Effect of temperature on the optical properties of (InGa)(AsN)/GaAs single quantum wells 132
Characterization of impurities in silicon by IR spectroscopy 129
Residual strain measurements in InGaAs metamorphic buffer layers on GaAs 128
Optical determination of strain field in GaAsN/GaAsN:H planar heterostructures 126
Calibration of an equipped single stroke tablet press 124
Interband optical properties of molecular-beam epitaxially-grown GaAs1-xSbx on GaAs substrates 121
Luminescence from beta-FeSi_2 Precipitates in Si. II: Origin and Nature of the Photoluminescence 120
Effect of charge density wave on thermoreflectance spectra of 2H-NbSe2 119
Quantum dot strain engineering of InAs/InGaAs nanostructures 117
Photoreflectance investigation of InAs/GaAs self-assembled quantum DOTS grow by ALMBE 115
Different quantum behavior of the E1 and E2 spectral structures in Ge nanocrystals 112
Metamorphic buffers and optical measurement of residual strain 110
Boron accumulation at epi-substrate silicon interface during epitaxial growth 108
Disintegrating force as a new formulation parameter 103
Optical Study of the Strain-driven Tuning of the Emission Energy in InAs/InGaAs Quantum Dot Nanostructures 103
Optical study of hydrogen-irradiated GaAsN/GaAs heterostructures 101
Infrared study of Fe-B-pair behavior in iron-implanted Czochralski silicon 101
Photoreflectance of GaSb/Al0.4Ga0.6Sb single quantum wells 101
The role of wetting layer states on the emission efficiency of InAs/InGaAs metamorphic quantum dot nanostructures 99
Studies of photoreflectance spectra in Cd(1-x)Mn(x)Te/CdTe superlattices with high compositions 96
HYDROGEN TUNING OF (INGA)(ASN) OPTICAL PROPERTIES 95
Raman scattering in InAs/AlGaAS quantum dot nanostructures 95
Quantitative determination of high-temperature oxygen microprecipitates in Czochralski silicon by micro-Fourier transform infrared spectroscopy 94
Studies of photoreflectance spectra in Cd(x)Mn(1-x)Te/CdTe superlattices with high compositions 93
Investigation of doping in Si crystals by means of electroreflectance 93
Study of metal and semiconductor nano-clusters crystalline stability versus temperature and quantum effects 92
Photoreflectance study of hydrogenated (InGa) (AsN)/GaAs heterostructures 91
Photoreflectance characterization of InAs/GaAs self-assembled quantum dots grown by ALMBE 87
Optical determination of free-carrier concentration in epitaxial layers of n-type silicon grown on N+ or N− substrates 87
Water uptake to fast disintegrating tablets and Weibull function 87
Effect of disorder on structures due to interband transitions in silicon 87
Optical Study of AlGaSb/GaSb Single Quantum Wells 85
Optical Study of Strained and Relaxed Epitaxial InxGa1-xAs on GaAs 85
Optical characterization of hierarchically self-assembled GaAs/AlGaAs quantum dots 85
Optical determination of oxygen outdiffusion in epitaxial silicon grown on n-type Czochralski substrates 85
Fast disintegrating tablets. A computer-aided method for describing water uptake kinetics 85
Photoreflectance analysis of MQW in intermediate electric field regime 85
Thermoreflectance study of the direct optical gap in epitaxial AlxGa1-xSb (x<=0.5) 84
Photoreflectance versus ellipsometry investigation of GaAs/Al0.3Ga0.7As MQW's 84
Photoreflectance investigation of hydrogenated (InGa)(AsN)/GaAs heterostructures 83
Quantum confinement effects above the band gap in Ge quantum dots 83
Il problema dell'adattamento delle proprietà ottiche dei materiali a particolari esigenze applicative 83
Thermal redistribution of iron implanted in Czochralski silicon 83
Optical investigation of ALMBE grown InAs self-assembled quantum dots embedded in InxGa1-xAs matrix 83
Infrared determination of interstitial oxygen behavior during epitaxial silicon growth on Czochralski substrates 81
Temperature dependence of light emission and absorption in (InGa)(AsN)/GaAs single quantum wells 79
Photoreflectance evidence on the N-induced increase of the exciton binding energy in a InGaAsN alloy 79
TERMOREFLECTANCE STUDY OF THE DIRECT ENERGY GAP OF GASB 79
Photoreflectance line shape in quantum-confined semiconductor systems: the case of dilute nitrides 79
Micro-Raman mapping of the strain field in GaAsN/GaAsN:H planar heterostructures: A brief review and recent evolution 79
Reflectance study of Al_(0.4)Ga_(0.6)Sb/GaSb single quantum wells 78
Infrared study of iron impurities in polycrystalline solar grade silicon 78
Photoreflectance study of growth mode in InAs-GaAs quasimonolayer single quantum wells 78
Step pseudomorphic asymmetric wells: an optical study in the framework of III-V strain induced sub-2D quantum systems 78
Infrared microcharacterization of grain boundaries in polycrystalline silicon 77
Interstitial oxygen determination in heavily doped silicon 77
Optical study of coherently grown InGaAs/InP heterostructures 76
Infrared investigation of the presence of Fe in B-doped polycrystalline silicon 76
Optical study of the strain effect in pseudomorphic In1-xGaxAs-InP heterostructures 75
Oxygen Behavior during Silicon Epitaxial Growth: Recent Advances 75
Plasmons and interband transitions in Ti_{1-x}Hf_xSe_2 systems 74
Optical Interference to Determine the Free Carrier Concentration in Semiconducting Epitaxial Layers 74
Study of nano-clusters crystalline stability versus temperature and quantum effects 73
Tablet weight uniformity and dissolution rate variations 73
Oxygen behaviour in Czochralski silicon substrates and epitaxial layers 73
Oxygen and iron redistribution upon thermal treatment in iron implanted silicon 73
Optical analysis of oxygen in epitaxial silicon 72
Photoreflectance spectroscopy of InAs self-assembled quantum dots 71
Photoelectron mean free path in Al films of M.O.S. structures 70
Optical characterization of epitaxial and doped semiconductors 70
Infrared thermoreflectance of VχTi(1-χ)Se2 70
Infrared angular spectroscopy characterization of epitaxial layers of n-type silicon grown on N+ or P+ substrates 69
Optical characterization of semiconductor, interfaces and heterostructures 69
Infrared study of oxygen precipitates in Czochralski grown silicon 68
Photoreflectance Characterization of InGaAs Lattice Matched to InP 67
Optical characterization of AlxGa1-xSb/GaSb epitaxial layers 66
PHOTOREFLECTANCE VERSUS PHOTOLUMINESCENCE IN STRAIN INDUCED QUANTUM WELL WIRES 66
Thermodynamic Properties and Optical Characterization of Metal Nanoparticles in Dielectric Matrix 65
Reflectancevs. Electroreflectance measurements on arsenic-doped silicon crystal 64
Impurities in Silicon Crystals and Silicon Epitaxial Films: Recent Advances 64
Photoelectron–grain boundary scattering in al films of MOS structures 64
Modellizzazione dei dati di assorbimento di acqua 64
Modelling of water penetration into fast disintegrating tablets 64
Interstitial oxygen determination near epitaxial silicon and Czochralski silicon interface 63
New achievements of electroreflectance to study doping inhomogeneities in semiconductors 61
Stoichiometry of oxygen precipitates in silicon 58
Totale 9.724
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Categoria #
all - tutte 36.753
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 36.753
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021235 0 0 0 0 0 0 0 0 0 113 106 16
2021/2022402 6 4 10 5 3 22 11 28 26 5 65 217
2022/20231.519 141 105 10 162 143 185 0 88 623 8 38 16
2023/2024413 44 84 23 35 41 123 0 16 4 16 17 10
2024/20251.573 9 130 45 48 24 130 172 176 345 31 102 361
2025/20262.914 233 168 432 275 335 167 726 185 230 163 0 0
Totale 9.980