IRIS
GEDDO, MARIO
 Distribuzione geografica
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Continente #
NA - Nord America 2.507
EU - Europa 1.887
AS - Asia 1.350
Continente sconosciuto - Info sul continente non disponibili 3
OC - Oceania 2
AF - Africa 1
SA - Sud America 1
Totale 5.751
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Nazione #
US - Stati Uniti d'America 2.489
CN - Cina 1.211
IE - Irlanda 504
UA - Ucraina 474
FI - Finlandia 255
DE - Germania 224
IT - Italia 152
SE - Svezia 125
SG - Singapore 119
GB - Regno Unito 79
FR - Francia 42
BE - Belgio 16
CA - Canada 13
IN - India 7
KR - Corea 5
MX - Messico 5
NL - Olanda 4
EU - Europa 3
RU - Federazione Russa 3
AT - Austria 2
AU - Australia 2
CZ - Repubblica Ceca 2
IR - Iran 2
JP - Giappone 2
LT - Lituania 2
CH - Svizzera 1
CL - Cile 1
GR - Grecia 1
HK - Hong Kong 1
MU - Mauritius 1
MY - Malesia 1
PT - Portogallo 1
TR - Turchia 1
VN - Vietnam 1
Totale 5.751
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Città #
Jacksonville 549
Chandler 543
Dublin 504
Nanjing 371
Boardman 167
Ashburn 164
Nanchang 148
Shenyang 123
Princeton 108
Hebei 107
Lawrence 103
Wilmington 95
Jiaxing 92
Changsha 84
Singapore 84
Beijing 69
Hangzhou 66
Ann Arbor 65
Medford 61
Tianjin 55
Helsinki 49
Woodbridge 39
Milan 36
Shanghai 28
Verona 28
Pavia 25
Washington 16
Brussels 15
Los Angeles 15
Norwalk 12
Toronto 11
Des Moines 10
Fairfield 9
Jinan 9
Auburn Hills 8
Houston 8
Ningbo 8
Seattle 6
Tappahannock 6
Zhengzhou 6
Fuzhou 5
Dallas 4
New York 4
Changchun 3
Kunming 3
Leawood 3
London 3
Munich 3
San Francisco 3
San Luis Potosí City 3
Taizhou 3
Almere Stad 2
Borås 2
Brno 2
Dearborn 2
Fiorenzuola d'Arda 2
Frankfurt am Main 2
Guangzhou 2
Gwangju 2
Lanzhou 2
Mexico City 2
Novate Milanese 2
Orange 2
Pune 2
Redmond 2
Vienna 2
Andover 1
Augusta 1
Berlin 1
Bethesda 1
Central 1
Dalian 1
Edmonton 1
Falkenstein 1
Fayetteville 1
Forest City 1
Gostar 1
Haikou 1
Handan 1
Hanoi 1
Kemerovo 1
Leninsk-kuznetskiy 1
Monmouth Junction 1
Novokuznetsk 1
Ottawa 1
Phoenix 1
Pisa 1
Ponte Vedra Beach 1
Reston 1
Rochedale 1
San Genesio Ed Uniti 1
Santa Clara 1
Sydney 1
Tokyo 1
Yantai 1
Zanjan 1
Totale 3.999
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Nome #
Brewster angle technique to study metal nanoparticle distributions in dielectric matrix 94
EFFECT OF HYDROGEN ON THE ELECTRONIC PROPERTIES OF GAAS(1-Y)N(Y) HETEROSTRUCTURES 86
Effect of nitrogen on the temperature dependence of the energy gap in InxGa1-xAs1-yNy/GaAs single quantum wells 86
Calibration of an equipped single stroke tablet press 84
H irradiation effects on the GaAs-like Raman modes in GaAs1-xNx/GaAs1-xNx:H planar heterostructures 84
Residual strain measurements in InGaAs metamorphic buffer layers on GaAs 83
Photoreflectance investigation of InAs/GaAs self-assembled quantum DOTS grow by ALMBE 81
Luminescence from beta-FeSi_2 Precipitates in Si. II: Origin and Nature of the Photoluminescence 81
EVOLUTION OF THE OPTICAL PROPERTIES OF INAS/GAAS QUANTUM DOTS FOR INCREASING INAS COVERAGES 80
Photoreflectance and Reflectance investigation of deuterium-irradiated GaAsN 79
An all optical mapping of the strain field in GaAsN/GaAsN:H wires 78
Quantum dot strain engineering of InAs/InGaAs nanostructures 77
Engineering of quantum dot structures for light emission in thespectral windows of photonic interest 77
Above the band gap structures in Ge nanoparticles: optical absorption spectra il Nuovo Cimento 18 D, 865 (1996) 75
Characterization of impurities in silicon by IR spectroscopy 75
Direct evidence of oxygen precipitates in epitaxial silicon obtained by micro-Fourier transform infrared spectroscopy 72
Metamorphic buffers and optical measurement of residual strain 71
DIagnostica ottica dei materiali: alcuni esempi 71
Effect of charge density wave on thermoreflectance spectra of 2H-NbSe2 71
A new computer-aided apparatus for simultaneous measurements of water uptake and swelling force in tablets 71
Disintegrating force as a new formulation parameter 67
Study of metal and semiconductor nano-clusters crystalline stability versus temperature and quantum effects 67
Boron accumulation at epi-substrate silicon interface during epitaxial growth 67
Effect of temperature on the optical properties of (InGa)(AsN)/GaAs single quantum wells 66
Optical study of hydrogen-irradiated GaAsN/GaAs heterostructures 65
Interband optical properties of molecular-beam epitaxially-grown GaAs1-xSbx on GaAs substrates 64
Studies of photoreflectance spectra in Cd(1-x)Mn(x)Te/CdTe superlattices with high compositions 64
Different quantum behavior of the E1 and E2 spectral structures in Ge nanocrystals 64
Photoreflectance of GaSb/Al0.4Ga0.6Sb single quantum wells 64
Studies of photoreflectance spectra in Cd(x)Mn(1-x)Te/CdTe superlattices with high compositions 63
A new computer-aided apparatus for simultaneous measurements of water uptake and swelling force in tablets 63
Investigation of doping in Si crystals by means of electroreflectance 62
Optical determination of strain field in GaAsN/GaAsN:H planar heterostructures 62
Photoreflectance study of hydrogenated (InGa) (AsN)/GaAs heterostructures 62
HYDROGEN TUNING OF (INGA)(ASN) OPTICAL PROPERTIES 61
Water uptake to fast disintegrating tablets and Weibull function 59
Infrared study of Fe-B-pair behavior in iron-implanted Czochralski silicon 58
The role of wetting layer states on the emission efficiency of InAs/InGaAs metamorphic quantum dot nanostructures 57
Optical determination of free-carrier concentration in epitaxial layers of n-type silicon grown on N+ or N− substrates 57
Fast disintegrating tablets. A computer-aided method for describing water uptake kinetics 57
Photoreflectance characterization of InAs/GaAs self-assembled quantum dots grown by ALMBE 56
Quantum confinement effects above the band gap in Ge quantum dots 56
Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V metalorganic sources 56
Il problema dell'adattamento delle proprietà ottiche dei materiali a particolari esigenze applicative 55
Thermoreflectance study of the direct optical gap in epitaxial AlxGa1-xSb (x<=0.5) 54
Optical Study of Strained and Relaxed Epitaxial InxGa1-xAs on GaAs 54
Optical characterization of hierarchically self-assembled GaAs/AlGaAs quantum dots 54
Raman scattering in InAs/AlGaAS quantum dot nanostructures 54
Effect of disorder on structures due to interband transitions in silicon 54
Photoreflectance investigation of hydrogenated (InGa)(AsN)/GaAs heterostructures 53
Optical Study of AlGaSb/GaSb Single Quantum Wells 53
Study of nano-clusters crystalline stability versus temperature and quantum effects 53
Thermal redistribution of iron implanted in Czochralski silicon 53
Infrared investigation of the presence of Fe in B-doped polycrystalline silicon 53
Optical study of the strain effect in pseudomorphic In1-xGaxAs-InP heterostructures 52
Temperature dependence of light emission and absorption in (InGa)(AsN)/GaAs single quantum wells 52
Optical study of coherently grown InGaAs/InP heterostructures 52
Reflectance study of Al_(0.4)Ga_(0.6)Sb/GaSb single quantum wells 51
Photoreflectance evidence on the N-induced increase of the exciton binding energy in a InGaAsN alloy 51
Interstitial oxygen determination in heavily doped silicon 51
Infrared determination of interstitial oxygen behavior during epitaxial silicon growth on Czochralski substrates 51
Step pseudomorphic asymmetric wells: an optical study in the framework of III-V strain induced sub-2D quantum systems 51
Infrared thermoreflectance of VχTi(1-χ)Se2 50
Optical investigation of ALMBE grown InAs self-assembled quantum dots embedded in InxGa1-xAs matrix 50
Optical Study of the Strain-driven Tuning of the Emission Energy in InAs/InGaAs Quantum Dot Nanostructures 50
Optical determination of oxygen outdiffusion in epitaxial silicon grown on n-type Czochralski substrates 49
Photoreflectance study of growth mode in InAs-GaAs quasimonolayer single quantum wells 49
TERMOREFLECTANCE STUDY OF THE DIRECT ENERGY GAP OF GASB 49
Oxygen and iron redistribution upon thermal treatment in iron implanted silicon 49
Infrared microcharacterization of grain boundaries in polycrystalline silicon 48
Quantitative determination of high-temperature oxygen microprecipitates in Czochralski silicon by micro-Fourier transform infrared spectroscopy 48
Plasmons and interband transitions in Ti_{1-x}Hf_xSe_2 systems 47
Oxygen Behavior during Silicon Epitaxial Growth: Recent Advances 47
Photoelectron mean free path in Al films of M.O.S. structures 47
Oxygen behaviour in Czochralski silicon substrates and epitaxial layers 47
Photoreflectance versus ellipsometry investigation of GaAs/Al0.3Ga0.7As MQW's 47
Optical analysis of oxygen in epitaxial silicon 47
Infrared study of iron impurities in polycrystalline solar grade silicon 46
Optical characterization of semiconductor, interfaces and heterostructures 46
Tablet weight uniformity and dissolution rate variations 45
Photoreflectance spectroscopy of InAs self-assembled quantum dots 45
Photoreflectance line shape in quantum-confined semiconductor systems: the case of dilute nitrides 45
Optical Interference to Determine the Free Carrier Concentration in Semiconducting Epitaxial Layers 45
Photoreflectance analysis of MQW in intermediate electric field regime 45
Infrared angular spectroscopy characterization of epitaxial layers of n-type silicon grown on N+ or P+ substrates 43
Thermodynamic Properties and Optical Characterization of Metal Nanoparticles in Dielectric Matrix 42
Reflectancevs. Electroreflectance measurements on arsenic-doped silicon crystal 41
Infrared study of oxygen precipitates in Czochralski grown silicon 41
Optical characterization of epitaxial and doped semiconductors 41
New achievements of electroreflectance to study doping inhomogeneities in semiconductors 40
Impurities in Silicon Crystals and Silicon Epitaxial Films: Recent Advances 40
PHOTOREFLECTANCE VERSUS PHOTOLUMINESCENCE IN STRAIN INDUCED QUANTUM WELL WIRES 40
Modellizzazione dei dati di assorbimento di acqua 39
Interstitial oxygen determination near epitaxial silicon and Czochralski silicon interface 37
Optical characterization of AlxGa1-xSb/GaSb epitaxial layers 37
Infrared study of oxygen precipitates in silicon with polarized light 36
Modelling of water penetration into fast disintegrating tablets 35
Stoichiometry of oxygen precipitates in silicon 35
Quantitative IR spectroscopy of interstitial Oxygen in heavily doped Silicon 34
Photoelectron–grain boundary scattering in al films of MOS structures 34
Totale 5.650
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Categoria #
all - tutte 22.617
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 22.617
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020362 0 0 0 0 0 94 6 96 1 121 42 2
2020/2021767 97 79 17 91 3 109 2 118 16 113 106 16
2021/2022402 6 4 10 5 3 22 11 28 26 5 65 217
2022/20231.519 141 105 10 162 143 185 0 88 623 8 38 16
2023/2024413 44 84 23 35 41 123 0 16 4 16 17 10
2024/2025307 9 130 45 48 24 51 0 0 0 0 0 0
Totale 5.800