IRIS
GEDDO, MARIO
 Distribuzione geografica
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Continente #
NA - Nord America 4.673
AS - Asia 2.893
EU - Europa 2.817
SA - Sud America 294
AF - Africa 160
Continente sconosciuto - Info sul continente non disponibili 53
OC - Oceania 5
Totale 10.895
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Nazione #
US - Stati Uniti d'America 4.569
CN - Cina 1.506
SG - Singapore 662
DE - Germania 540
IE - Irlanda 506
UA - Ucraina 480
FI - Finlandia 399
HK - Hong Kong 276
IT - Italia 213
BR - Brasile 209
VN - Vietnam 197
RU - Federazione Russa 196
FR - Francia 144
SE - Svezia 132
GB - Regno Unito 120
ZA - Sudafrica 118
IN - India 71
CA - Canada 42
MX - Messico 41
AR - Argentina 29
BD - Bangladesh 27
IQ - Iraq 24
TR - Turchia 19
JP - Giappone 18
BE - Belgio 17
NL - Olanda 16
CO - Colombia 14
PL - Polonia 13
ID - Indonesia 12
SA - Arabia Saudita 12
EC - Ecuador 11
ES - Italia 11
PK - Pakistan 11
VE - Venezuela 9
KR - Corea 8
KE - Kenya 7
CL - Cile 6
LT - Lituania 6
PH - Filippine 6
UY - Uruguay 6
UZ - Uzbekistan 6
AT - Austria 5
MA - Marocco 5
MY - Malesia 5
PE - Perù 5
AU - Australia 4
CH - Svizzera 4
CR - Costa Rica 4
EG - Egitto 4
IR - Iran 4
NI - Nicaragua 4
SN - Senegal 4
TN - Tunisia 4
TT - Trinidad e Tobago 4
AO - Angola 3
CZ - Repubblica Ceca 3
DZ - Algeria 3
EU - Europa 3
IL - Israele 3
JO - Giordania 3
PY - Paraguay 3
QA - Qatar 3
AL - Albania 2
AZ - Azerbaigian 2
BG - Bulgaria 2
BH - Bahrain 2
CI - Costa d'Avorio 2
ET - Etiopia 2
GT - Guatemala 2
KG - Kirghizistan 2
KW - Kuwait 2
KZ - Kazakistan 2
ML - Mali 2
MU - Mauritius 2
NP - Nepal 2
PS - Palestinian Territory 2
AE - Emirati Arabi Uniti 1
AM - Armenia 1
BB - Barbados 1
BF - Burkina Faso 1
BS - Bahamas 1
CY - Cipro 1
DK - Danimarca 1
EE - Estonia 1
GR - Grecia 1
GY - Guiana 1
HR - Croazia 1
HU - Ungheria 1
JM - Giamaica 1
KH - Cambogia 1
KN - Saint Kitts e Nevis 1
KY - Cayman, isole 1
LK - Sri Lanka 1
MR - Mauritania 1
NO - Norvegia 1
NZ - Nuova Zelanda 1
PA - Panama 1
PT - Portogallo 1
RE - Reunion 1
SC - Seychelles 1
Totale 10.841
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Città #
Jacksonville 550
Chandler 543
San Jose 541
Dublin 506
Nanjing 373
Ashburn 364
Singapore 356
Dallas 306
Munich 298
Hong Kong 267
Council Bluffs 221
Beijing 169
Boardman 168
Helsinki 166
Nanchang 149
Shenyang 124
Johannesburg 108
Princeton 108
Hebei 107
Lawrence 103
Wilmington 96
Jiaxing 94
Lauterbourg 93
Changsha 87
Los Angeles 86
Hangzhou 66
Ann Arbor 65
Medford 61
Ho Chi Minh City 57
Tianjin 57
Hanoi 55
Buffalo 45
Milan 43
Santa Clara 40
Woodbridge 39
Moscow 35
Shanghai 34
Redondo Beach 30
Orem 29
New York 28
Verona 28
Pavia 26
São Paulo 23
Toronto 19
Chennai 18
Columbus 17
Atlanta 16
Brussels 16
The Dalles 16
Tokyo 16
Washington 16
Cuautitlán Izcalli 15
Houston 14
Frankfurt am Main 13
Baghdad 12
Jyväskylä 12
London 12
Norwalk 12
Seattle 12
Warsaw 12
Chicago 11
Da Nang 11
Denver 11
Des Moines 11
Rome 11
Brooklyn 10
Fairfield 10
Jinan 10
Turku 10
Amsterdam 9
Ningbo 9
Phoenix 9
San Francisco 9
Auburn Hills 8
New Delhi 8
Zhengzhou 8
Belo Horizonte 7
Charlotte 7
Delhi 7
Dhaka 7
Guangzhou 7
Manchester 7
Montreal 7
Mumbai 7
Stockholm 7
Guayaquil 6
Haiphong 6
Jeddah 6
Mexico City 6
Nairobi 6
Naples 6
Nuremberg 6
Secaucus 6
Tappahannock 6
Tashkent 6
Bitonto 5
Boston 5
Chongqing 5
Fuzhou 5
Lima 5
Totale 7.295
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Nome #
Engineering of quantum dot structures for light emission in thespectral windows of photonic interest 297
DIagnostica ottica dei materiali: alcuni esempi 267
Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V metalorganic sources 236
An all optical mapping of the strain field in GaAsN/GaAsN:H wires 173
H irradiation effects on the GaAs-like Raman modes in GaAs1-xNx/GaAs1-xNx:H planar heterostructures 169
Effect of nitrogen on the temperature dependence of the energy gap in InxGa1-xAs1-yNy/GaAs single quantum wells 161
Photoreflectance and Reflectance investigation of deuterium-irradiated GaAsN 155
A new computer-aided apparatus for simultaneous measurements of water uptake and swelling force in tablets 154
Brewster angle technique to study metal nanoparticle distributions in dielectric matrix 151
Residual strain measurements in InGaAs metamorphic buffer layers on GaAs 149
EVOLUTION OF THE OPTICAL PROPERTIES OF INAS/GAAS QUANTUM DOTS FOR INCREASING INAS COVERAGES 149
EFFECT OF HYDROGEN ON THE ELECTRONIC PROPERTIES OF GAAS(1-Y)N(Y) HETEROSTRUCTURES 145
Direct evidence of oxygen precipitates in epitaxial silicon obtained by micro-Fourier transform infrared spectroscopy 145
A new computer-aided apparatus for simultaneous measurements of water uptake and swelling force in tablets 143
Effect of temperature on the optical properties of (InGa)(AsN)/GaAs single quantum wells 142
Above the band gap structures in Ge nanoparticles: optical absorption spectra il Nuovo Cimento 18 D, 865 (1996) 139
Optical determination of strain field in GaAsN/GaAsN:H planar heterostructures 139
Interband optical properties of molecular-beam epitaxially-grown GaAs1-xSbx on GaAs substrates 137
Luminescence from beta-FeSi_2 Precipitates in Si. II: Origin and Nature of the Photoluminescence 135
Characterization of impurities in silicon by IR spectroscopy 133
Quantum dot strain engineering of InAs/InGaAs nanostructures 132
Calibration of an equipped single stroke tablet press 131
Effect of charge density wave on thermoreflectance spectra of 2H-NbSe2 125
Photoreflectance investigation of InAs/GaAs self-assembled quantum DOTS grow by ALMBE 123
Metamorphic buffers and optical measurement of residual strain 122
Different quantum behavior of the E1 and E2 spectral structures in Ge nanocrystals 117
Boron accumulation at epi-substrate silicon interface during epitaxial growth 116
HYDROGEN TUNING OF (INGA)(ASN) OPTICAL PROPERTIES 115
Optical study of hydrogen-irradiated GaAsN/GaAs heterostructures 112
Infrared study of Fe-B-pair behavior in iron-implanted Czochralski silicon 111
Optical Study of the Strain-driven Tuning of the Emission Energy in InAs/InGaAs Quantum Dot Nanostructures 111
Photoreflectance of GaSb/Al0.4Ga0.6Sb single quantum wells 111
Studies of photoreflectance spectra in Cd(x)Mn(1-x)Te/CdTe superlattices with high compositions 110
Disintegrating force as a new formulation parameter 109
The role of wetting layer states on the emission efficiency of InAs/InGaAs metamorphic quantum dot nanostructures 108
Quantitative determination of high-temperature oxygen microprecipitates in Czochralski silicon by micro-Fourier transform infrared spectroscopy 106
Raman scattering in InAs/AlGaAS quantum dot nanostructures 105
Studies of photoreflectance spectra in Cd(1-x)Mn(x)Te/CdTe superlattices with high compositions 104
Optical Study of AlGaSb/GaSb Single Quantum Wells 102
Optical determination of free-carrier concentration in epitaxial layers of n-type silicon grown on N+ or N− substrates 100
Thermoreflectance study of the direct optical gap in epitaxial AlxGa1-xSb (x<=0.5) 99
Investigation of doping in Si crystals by means of electroreflectance 98
Study of metal and semiconductor nano-clusters crystalline stability versus temperature and quantum effects 98
Photoreflectance study of hydrogenated (InGa) (AsN)/GaAs heterostructures 97
Optical Study of Strained and Relaxed Epitaxial InxGa1-xAs on GaAs 96
Effect of disorder on structures due to interband transitions in silicon 96
Photoreflectance characterization of InAs/GaAs self-assembled quantum dots grown by ALMBE 95
Water uptake to fast disintegrating tablets and Weibull function 94
Optical characterization of hierarchically self-assembled GaAs/AlGaAs quantum dots 93
Optical determination of oxygen outdiffusion in epitaxial silicon grown on n-type Czochralski substrates 93
Photoreflectance versus ellipsometry investigation of GaAs/Al0.3Ga0.7As MQW's 93
Photoreflectance investigation of hydrogenated (InGa)(AsN)/GaAs heterostructures 92
Photoreflectance evidence on the N-induced increase of the exciton binding energy in a InGaAsN alloy 92
Thermal redistribution of iron implanted in Czochralski silicon 92
Photoreflectance analysis of MQW in intermediate electric field regime 92
Fast disintegrating tablets. A computer-aided method for describing water uptake kinetics 91
Optical study of the strain effect in pseudomorphic In1-xGaxAs-InP heterostructures 90
Quantum confinement effects above the band gap in Ge quantum dots 90
TERMOREFLECTANCE STUDY OF THE DIRECT ENERGY GAP OF GASB 89
Reflectance study of Al_(0.4)Ga_(0.6)Sb/GaSb single quantum wells 88
Il problema dell'adattamento delle proprietà ottiche dei materiali a particolari esigenze applicative 88
Infrared determination of interstitial oxygen behavior during epitaxial silicon growth on Czochralski substrates 88
Photoreflectance line shape in quantum-confined semiconductor systems: the case of dilute nitrides 88
Photoreflectance study of growth mode in InAs-GaAs quasimonolayer single quantum wells 87
Optical investigation of ALMBE grown InAs self-assembled quantum dots embedded in InxGa1-xAs matrix 87
Modelling of water penetration into fast disintegrating tablets 87
Infrared study of iron impurities in polycrystalline solar grade silicon 86
Temperature dependence of light emission and absorption in (InGa)(AsN)/GaAs single quantum wells 85
Micro-Raman mapping of the strain field in GaAsN/GaAsN:H planar heterostructures: A brief review and recent evolution 85
Interstitial oxygen determination in heavily doped silicon 84
Oxygen behaviour in Czochralski silicon substrates and epitaxial layers 84
Step pseudomorphic asymmetric wells: an optical study in the framework of III-V strain induced sub-2D quantum systems 84
Optical Interference to Determine the Free Carrier Concentration in Semiconducting Epitaxial Layers 84
Infrared microcharacterization of grain boundaries in polycrystalline silicon 83
Tablet weight uniformity and dissolution rate variations 83
Oxygen Behavior during Silicon Epitaxial Growth: Recent Advances 83
Infrared investigation of the presence of Fe in B-doped polycrystalline silicon 83
Optical study of coherently grown InGaAs/InP heterostructures 82
Plasmons and interband transitions in Ti_{1-x}Hf_xSe_2 systems 81
Infrared thermoreflectance of VχTi(1-χ)Se2 81
Oxygen and iron redistribution upon thermal treatment in iron implanted silicon 80
Optical analysis of oxygen in epitaxial silicon 79
Photoreflectance spectroscopy of InAs self-assembled quantum dots 78
Study of nano-clusters crystalline stability versus temperature and quantum effects 77
Infrared angular spectroscopy characterization of epitaxial layers of n-type silicon grown on N+ or P+ substrates 76
Optical characterization of epitaxial and doped semiconductors 76
Optical characterization of AlxGa1-xSb/GaSb epitaxial layers 76
Infrared study of oxygen precipitates in Czochralski grown silicon 75
Photoelectron mean free path in Al films of M.O.S. structures 74
Thermodynamic Properties and Optical Characterization of Metal Nanoparticles in Dielectric Matrix 74
Optical characterization of semiconductor, interfaces and heterostructures 74
Impurities in Silicon Crystals and Silicon Epitaxial Films: Recent Advances 72
Photoelectron–grain boundary scattering in al films of MOS structures 72
PHOTOREFLECTANCE VERSUS PHOTOLUMINESCENCE IN STRAIN INDUCED QUANTUM WELL WIRES 72
Interstitial oxygen determination near epitaxial silicon and Czochralski silicon interface 71
Photoreflectance Characterization of InGaAs Lattice Matched to InP 70
Modellizzazione dei dati di assorbimento di acqua 69
Reflectancevs. Electroreflectance measurements on arsenic-doped silicon crystal 68
New achievements of electroreflectance to study doping inhomogeneities in semiconductors 67
Stoichiometry of oxygen precipitates in silicon 63
Totale 10.613
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Categoria #
all - tutte 42.837
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 42.837
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022382 0 0 0 5 3 22 11 28 26 5 65 217
2022/20231.519 141 105 10 162 143 185 0 88 623 8 38 16
2023/2024413 44 84 23 35 41 123 0 16 4 16 17 10
2024/20251.573 9 130 45 48 24 130 172 176 345 31 102 361
2025/20263.204 233 168 432 275 335 167 726 185 230 201 74 178
2026/2027625 72 178 196 179 0 0 0 0 0 0 0 0
Totale 10.895