IRIS
GEDDO, MARIO
 Distribuzione geografica
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Continente #
NA - Nord America 3.364
EU - Europa 2.611
AS - Asia 2.346
SA - Sud America 190
AF - Africa 30
OC - Oceania 5
Continente sconosciuto - Info sul continente non disponibili 4
Totale 8.550
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Nazione #
US - Stati Uniti d'America 3.309
CN - Cina 1.463
DE - Germania 530
IE - Irlanda 505
UA - Ucraina 478
SG - Singapore 472
FI - Finlandia 398
HK - Hong Kong 237
RU - Federazione Russa 192
IT - Italia 160
BR - Brasile 155
SE - Svezia 132
GB - Regno Unito 100
VN - Vietnam 52
FR - Francia 45
IN - India 34
CA - Canada 31
MX - Messico 20
BE - Belgio 17
ZA - Sudafrica 15
PL - Polonia 13
AR - Argentina 12
BD - Bangladesh 12
JP - Giappone 12
IQ - Iraq 9
NL - Olanda 9
TR - Turchia 9
ES - Italia 8
ID - Indonesia 8
KR - Corea 8
EC - Ecuador 7
LT - Lituania 6
KE - Kenya 5
UY - Uruguay 5
AT - Austria 4
AU - Australia 4
CH - Svizzera 4
SA - Arabia Saudita 4
VE - Venezuela 4
EU - Europa 3
IL - Israele 3
IR - Iran 3
PE - Perù 3
SN - Senegal 3
AO - Angola 2
AZ - Azerbaigian 2
BG - Bulgaria 2
BH - Bahrain 2
CI - Costa d'Avorio 2
CZ - Repubblica Ceca 2
GT - Guatemala 2
JO - Giordania 2
KG - Kirghizistan 2
MY - Malesia 2
PK - Pakistan 2
PY - Paraguay 2
AE - Emirati Arabi Uniti 1
AM - Armenia 1
CL - Cile 1
CO - Colombia 1
CY - Cipro 1
EE - Estonia 1
GR - Grecia 1
HR - Croazia 1
HU - Ungheria 1
KH - Cambogia 1
KN - Saint Kitts e Nevis 1
KW - Kuwait 1
KZ - Kazakistan 1
LK - Sri Lanka 1
MA - Marocco 1
ML - Mali 1
MU - Mauritius 1
NO - Norvegia 1
NZ - Nuova Zelanda 1
PA - Panama 1
PT - Portogallo 1
UZ - Uzbekistan 1
XK - ???statistics.table.value.countryCode.XK??? 1
Totale 8.550
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Città #
Jacksonville 549
Chandler 543
Dublin 505
Nanjing 373
Dallas 302
Munich 298
Ashburn 258
Hong Kong 236
Singapore 212
Boardman 167
Helsinki 165
Beijing 161
Nanchang 149
Shenyang 124
Princeton 108
Hebei 107
Lawrence 103
Wilmington 95
Jiaxing 94
Changsha 87
Los Angeles 76
Hangzhou 66
Ann Arbor 65
Medford 61
Tianjin 57
Buffalo 39
Woodbridge 39
Milan 36
Moscow 35
Shanghai 32
Redondo Beach 30
Verona 28
Pavia 25
New York 21
São Paulo 19
Toronto 18
Brussels 16
Columbus 16
The Dalles 16
Washington 16
Ho Chi Minh City 15
Santa Clara 14
Houston 13
Hanoi 12
Jyväskylä 12
Norwalk 12
Seattle 12
Warsaw 12
Atlanta 11
Denver 11
Tokyo 11
Chennai 10
Des Moines 10
Jinan 10
Turku 10
Brooklyn 9
Fairfield 9
London 9
Ningbo 9
Auburn Hills 8
Johannesburg 8
San Francisco 8
Zhengzhou 8
Guangzhou 7
Stockholm 7
Chicago 6
Mexico City 6
Tappahannock 6
Amsterdam 5
Baghdad 5
Belo Horizonte 5
Boston 5
Charlotte 5
Chongqing 5
Council Bluffs 5
Fuzhou 5
Nuremberg 5
Phoenix 5
Secaucus 5
Ankara 4
Frankfurt am Main 4
Kunming 4
Montevideo 4
Montreal 4
Nairobi 4
New Delhi 4
Orem 4
Poplar 4
Queenstown Estate 4
San Luis Potosí City 4
Brasília 3
Campinas 3
Cape Town 3
Changchun 3
Curitiba 3
Dakar 3
Delhi 3
Dhaka 3
Guayaquil 3
Haiphong 3
Totale 5.751
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Nome #
Engineering of quantum dot structures for light emission in thespectral windows of photonic interest 252
DIagnostica ottica dei materiali: alcuni esempi 241
Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V metalorganic sources 211
A new computer-aided apparatus for simultaneous measurements of water uptake and swelling force in tablets 133
An all optical mapping of the strain field in GaAsN/GaAsN:H wires 132
H irradiation effects on the GaAs-like Raman modes in GaAs1-xNx/GaAs1-xNx:H planar heterostructures 129
Effect of nitrogen on the temperature dependence of the energy gap in InxGa1-xAs1-yNy/GaAs single quantum wells 127
Brewster angle technique to study metal nanoparticle distributions in dielectric matrix 125
EFFECT OF HYDROGEN ON THE ELECTRONIC PROPERTIES OF GAAS(1-Y)N(Y) HETEROSTRUCTURES 121
EVOLUTION OF THE OPTICAL PROPERTIES OF INAS/GAAS QUANTUM DOTS FOR INCREASING INAS COVERAGES 121
Above the band gap structures in Ge nanoparticles: optical absorption spectra il Nuovo Cimento 18 D, 865 (1996) 117
Direct evidence of oxygen precipitates in epitaxial silicon obtained by micro-Fourier transform infrared spectroscopy 117
Photoreflectance and Reflectance investigation of deuterium-irradiated GaAsN 117
Effect of temperature on the optical properties of (InGa)(AsN)/GaAs single quantum wells 113
A new computer-aided apparatus for simultaneous measurements of water uptake and swelling force in tablets 112
Characterization of impurities in silicon by IR spectroscopy 111
Calibration of an equipped single stroke tablet press 109
Residual strain measurements in InGaAs metamorphic buffer layers on GaAs 108
Effect of charge density wave on thermoreflectance spectra of 2H-NbSe2 107
Optical determination of strain field in GaAsN/GaAsN:H planar heterostructures 107
Photoreflectance investigation of InAs/GaAs self-assembled quantum DOTS grow by ALMBE 105
Luminescence from beta-FeSi_2 Precipitates in Si. II: Origin and Nature of the Photoluminescence 104
Quantum dot strain engineering of InAs/InGaAs nanostructures 101
Metamorphic buffers and optical measurement of residual strain 100
Different quantum behavior of the E1 and E2 spectral structures in Ge nanocrystals 99
Boron accumulation at epi-substrate silicon interface during epitaxial growth 97
Interband optical properties of molecular-beam epitaxially-grown GaAs1-xSbx on GaAs substrates 94
Disintegrating force as a new formulation parameter 91
Optical study of hydrogen-irradiated GaAsN/GaAs heterostructures 86
HYDROGEN TUNING OF (INGA)(ASN) OPTICAL PROPERTIES 84
The role of wetting layer states on the emission efficiency of InAs/InGaAs metamorphic quantum dot nanostructures 84
Study of metal and semiconductor nano-clusters crystalline stability versus temperature and quantum effects 83
Studies of photoreflectance spectra in Cd(1-x)Mn(x)Te/CdTe superlattices with high compositions 82
Photoreflectance of GaSb/Al0.4Ga0.6Sb single quantum wells 82
Studies of photoreflectance spectra in Cd(x)Mn(1-x)Te/CdTe superlattices with high compositions 81
Optical Study of the Strain-driven Tuning of the Emission Energy in InAs/InGaAs Quantum Dot Nanostructures 81
Investigation of doping in Si crystals by means of electroreflectance 80
Photoreflectance study of hydrogenated (InGa) (AsN)/GaAs heterostructures 80
Infrared study of Fe-B-pair behavior in iron-implanted Czochralski silicon 79
Photoreflectance characterization of InAs/GaAs self-assembled quantum dots grown by ALMBE 77
Quantitative determination of high-temperature oxygen microprecipitates in Czochralski silicon by micro-Fourier transform infrared spectroscopy 77
Optical Study of AlGaSb/GaSb Single Quantum Wells 76
Quantum confinement effects above the band gap in Ge quantum dots 76
Effect of disorder on structures due to interband transitions in silicon 76
Raman scattering in InAs/AlGaAS quantum dot nanostructures 75
Optical determination of free-carrier concentration in epitaxial layers of n-type silicon grown on N+ or N− substrates 75
Thermoreflectance study of the direct optical gap in epitaxial AlxGa1-xSb (x<=0.5) 74
Water uptake to fast disintegrating tablets and Weibull function 74
Photoreflectance investigation of hydrogenated (InGa)(AsN)/GaAs heterostructures 73
Infrared determination of interstitial oxygen behavior during epitaxial silicon growth on Czochralski substrates 73
Fast disintegrating tablets. A computer-aided method for describing water uptake kinetics 73
Photoreflectance evidence on the N-induced increase of the exciton binding energy in a InGaAsN alloy 72
Optical investigation of ALMBE grown InAs self-assembled quantum dots embedded in InxGa1-xAs matrix 72
Optical Study of Strained and Relaxed Epitaxial InxGa1-xAs on GaAs 71
Thermal redistribution of iron implanted in Czochralski silicon 71
Optical characterization of hierarchically self-assembled GaAs/AlGaAs quantum dots 70
Oxygen Behavior during Silicon Epitaxial Growth: Recent Advances 70
Photoreflectance versus ellipsometry investigation of GaAs/Al0.3Ga0.7As MQW's 70
Reflectance study of Al_(0.4)Ga_(0.6)Sb/GaSb single quantum wells 69
Interstitial oxygen determination in heavily doped silicon 69
Il problema dell'adattamento delle proprietà ottiche dei materiali a particolari esigenze applicative 69
Optical study of the strain effect in pseudomorphic In1-xGaxAs-InP heterostructures 68
Temperature dependence of light emission and absorption in (InGa)(AsN)/GaAs single quantum wells 68
Optical determination of oxygen outdiffusion in epitaxial silicon grown on n-type Czochralski substrates 68
TERMOREFLECTANCE STUDY OF THE DIRECT ENERGY GAP OF GASB 68
Photoreflectance line shape in quantum-confined semiconductor systems: the case of dilute nitrides 68
Infrared thermoreflectance of VχTi(1-χ)Se2 66
Photoreflectance study of growth mode in InAs-GaAs quasimonolayer single quantum wells 66
Step pseudomorphic asymmetric wells: an optical study in the framework of III-V strain induced sub-2D quantum systems 66
Optical analysis of oxygen in epitaxial silicon 66
Infrared investigation of the presence of Fe in B-doped polycrystalline silicon 66
Optical study of coherently grown InGaAs/InP heterostructures 65
Infrared microcharacterization of grain boundaries in polycrystalline silicon 64
Plasmons and interband transitions in Ti_{1-x}Hf_xSe_2 systems 64
Oxygen behaviour in Czochralski silicon substrates and epitaxial layers 64
Optical Interference to Determine the Free Carrier Concentration in Semiconducting Epitaxial Layers 64
Photoreflectance analysis of MQW in intermediate electric field regime 64
Study of nano-clusters crystalline stability versus temperature and quantum effects 63
Oxygen and iron redistribution upon thermal treatment in iron implanted silicon 63
Micro-Raman mapping of the strain field in GaAsN/GaAsN:H planar heterostructures: A brief review and recent evolution 63
Tablet weight uniformity and dissolution rate variations 62
Photoelectron mean free path in Al films of M.O.S. structures 62
Infrared study of iron impurities in polycrystalline solar grade silicon 61
Photoreflectance Characterization of InGaAs Lattice Matched to InP 60
Impurities in Silicon Crystals and Silicon Epitaxial Films: Recent Advances 59
Infrared angular spectroscopy characterization of epitaxial layers of n-type silicon grown on N+ or P+ substrates 59
Optical characterization of epitaxial and doped semiconductors 59
Photoreflectance spectroscopy of InAs self-assembled quantum dots 58
Thermodynamic Properties and Optical Characterization of Metal Nanoparticles in Dielectric Matrix 58
Optical characterization of semiconductor, interfaces and heterostructures 56
PHOTOREFLECTANCE VERSUS PHOTOLUMINESCENCE IN STRAIN INDUCED QUANTUM WELL WIRES 56
Reflectancevs. Electroreflectance measurements on arsenic-doped silicon crystal 55
Infrared study of oxygen precipitates in Czochralski grown silicon 55
Interstitial oxygen determination near epitaxial silicon and Czochralski silicon interface 55
Optical characterization of AlxGa1-xSb/GaSb epitaxial layers 55
Modellizzazione dei dati di assorbimento di acqua 54
New achievements of electroreflectance to study doping inhomogeneities in semiconductors 53
Photoelectron–grain boundary scattering in al films of MOS structures 53
Modelling of water penetration into fast disintegrating tablets 52
Stoichiometry of oxygen precipitates in silicon 51
Totale 8.382
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Categoria #
all - tutte 34.247
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 34.247
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021480 0 0 0 0 0 109 2 118 16 113 106 16
2021/2022402 6 4 10 5 3 22 11 28 26 5 65 217
2022/20231.519 141 105 10 162 143 185 0 88 623 8 38 16
2023/2024413 44 84 23 35 41 123 0 16 4 16 17 10
2024/20251.573 9 130 45 48 24 130 172 176 345 31 102 361
2025/20261.533 233 168 432 275 335 90 0 0 0 0 0 0
Totale 8.599